IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36A VCES =1200V VCE(sat)typ= 2.4V in ISOPLUS247™ C ISOPLUS247™ C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C 1200 V ± 20 V 29 19 A A TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 W; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 68 W TVJ = 125°C; non-repetitive Ptot TC = 25°C Symbol Conditions e IC25 IC90 -o u VGES 40 VCES A 10 µs 130 W s Characteristic Values a (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.4 2.8 2.8 V V 6.5 V 0.2 mA mA 200 nA IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.6 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff Inductive load L = 100 µH; TVJ = 125°C VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 68 Ω 205 105 320 175 4.1 1.5 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 20 A 1.2 100 nF nC RthJC RthCH with heatsink compound 0.5 p h VCE(sat) 4.5 0.2 0.96 IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved •NPT3 IGBT -low saturation voltage -positive temperature coefficient for easy paralleling -fast switching -short tail current for optimized performance in resonant circuits •HiPerFRED™ diode -fast reverse recovery -low operating forward voltage -low leakage current •ISOPLUS247™ package -isolated back surface -low coupling capacity between pins and heatsink -high reliability -industry standard outline t Maximum Ratings Applications •single switches •choppers with complementary free wheeling diodes •phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating K/W K/W 20080118a -4 IXER 20N120 IXER 20N120D1 Diode [D1 version only] Symbol Conditions IF25 IF90 TC = 25°C TC = 90°C Symbol Conditions Maximum Ratings A A 25 15 Characteristic Values min. typ. max. 2.6 2.0 3.0 VF IF = 20 A; VGE = 0 V; IRM trr VR = 600 V; L = 100 µH; TVJ = 125°C diF /dt = -400A/µs; IF = 15 A; VGE = 0 V 16 130 A ns RthJC RthCH 2.3 1.3 K/W with heatsink compound TVJ = 25°C TVJ = 125°C V V Module Conditions Maximum Ratings TVJ Tstg -55...+150 -55...+150 IISOL < 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions 2500 20...120 N -o Characteristic Values min. CP V~ u VISOL °C °C t Symbol coupling capacity between shorted pins and mounting tab in the case pF 6 g p h a s ISOPLUS247™ Outline max. 30 e Weight typ. Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoff-foberfläche der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC außer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080118a -4 IXER 20N120 IXER 20N120D1 80 VGE = 17 V 15 V 50 15 V 60 TVJ = 125°C 13 V 40 TVJ = 25°C 13 V IC [A] IC [A] 60 VGE = 17 V 40 11 V 30 11 V 20 20 9V 9V 0 0 1 2 3 4 5 10 0 6 0 1 2 VCE [V] 80 Typ. output characteristics Fig. 2 50 6 Typ. output characteristics 40 IF [A] TVJ = 25°C 40 TVJ = 125°C 10 15 VGE [V] Typ. transfer characteristics 2 3 4 Typ. forward characteristics of free wheeling diode 200 40 VCE = 600 V IC = 20 A 12 1 Fig. 4 p 15 0 VF [V] h Fig. 3 TVJ = 25°C 10 0 20 TVJ = 125°C 20 a 5 s e 20 0 30 -o IC [A] 5 u VCE = 20 V 60 0 4 t Fig. 1 3 VCE [V] 150 30 IRM [A] 9 6 100 20 TVJ = 125°C VR = 600 V IF = 15 A 10 3 IRM 0 0 20 40 60 80 100 0 0 QG [nC] Fig. 5 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 50 FII30-12E 200 400 600 trr [ns] VGE [V] trr 800 0 1000 -di/dt [A/µs] Fig. 6 Typ. turn off characteristics of free wheeling diode 20080118a -4 IXER 20N120 IXER 20N120D1 tr 150 RG = 68 : TVJ = 125°C 8 100 4 0 3.0 2.5 2.0 RG = 68 : TVJ = 125°C 1.0 50 0 10 20 30 0.0 0 40 250 200 150 100 Eoff 0.5 Eon 300 VCE = 600 V VGE = ±15 V 1.5 0 10 20 Fig. 8 2.5 u 2.0 100 150 200 250 0.0 tf 0 50 100 RG = 68 : TVJ = 125°C 20 250 Fig.10 Typ. turn off energy and switching times versus gate resistor 10 diode IGBT 1 10 0 200 400 600 800 1000 1200 1400 1 2 3 4 0.1 0.001 0.01 VCE [V] Fig. 11 Reverse biased safe operating area RBSOA Diode Ri τi 0.497 0.001782 1.419 0.043 0.72 0.196 0.945 0.011 0.1 1 10 t [ms] Thermal Analysis Model R2 C1 © 2008 IXYS All rights reserved IGBT Ri τi 0.193 0.001601 0.571 0.022 0.059 2.192 0.634 0.134 Fig. 12 Typ. transient thermal impedance R1 IXYS reserves the right to change limits, test conditions and dimensions. 0 200 p 30 0 150 RG [:] ZthJH [K/W] ICM [A] 40 750 0.5 Typ. turn on energy vs gate resistor 50 td(off) Eoff 500 h Fig. 9 250 1000 1.0 a RG [:] s 50 e VCE = 600 V VGE = ±15 V IC = 20 A TVJ = 125°C 0 1.5 -o Eoff [mJ] 6 1250 VCE = 600 V VGE = ±15 V IC = 20 A TVJ = 125°C t [ns] Eon [mJ] 8 Typ. turn off energy and switching times versus collector current t 10 0 0 40 A 30 IC [A] Fig. 7 Typ. turn on energy and switching times versus collector current 2 50 tf IC [A] 4 350 t [ns] VCE = 600 V VGE = ±15 V 12 400 td(off) 3.5 200 t [ns] Eon [mJ] 16 4.0 250 td(on) Eoff [mJ] 20 R3 C2 n R4 C3 Zth( t) = C4 ∑ i =1 t τi R i 1 − exp − τi = Ri⋅ Ci 20080118a -4