IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 35 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES V ± 20 V 50 32 A A 50 VCES A 10 µs 200 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.6 4.5 2.8 V V 6.5 V 0.4 mA mA 200 nA 0.4 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 39 Ω 85 50 440 50 5.4 2.6 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 35 A 2 150 nF nC RthJC RthCH with heatsink compound 0.3 0.6 K/W K/W • HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • ISOPLUS 247TM package - isolated back surface - low coupling capacity between pins and heatsink - high reliability - industry standard outline Applications • single switches • choppers with complementary free wheeling diodes • phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating 0528 td(on) tr td(off) tf Eon Eoff 1200 • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits © 2005 IXYS All rights reserved 1-4 IXER 35N120D1 Diode Equivalent Circuits for Simulation Symbol Conditions IF25 IF90 TC = 25°C TC = 90°C 48 25 Symbol Conditions Characteristic Values min. typ. max. VF IF = 35 A; TVJ = 25°C TVJ = 125°C IRM t rr Erec(off) RthJC RthCH IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V with heatsink compound Maximum Ratings 2.5 1.9 A A 2.9 V V 51 80 A ns 1.8 mJ 0.6 1.2 K/W K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 45 mΩ Diode (typ. at TJ = 125°C) V0 = 1.26V; R0 = 15 mΩ Thermal Response IGBT Cth1 = 0.067 J/K; Rth1 = 0.108 K/W Cth2 = 0.175 J/K; Rth2 = 0.491 K/W Component Symbol Conduction Conditions TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions Cp coupling capacity between shorted pins and mounting tab in the case Weight Maximum Ratings -55...+150 -55...+125 °C °C 2500 V~ 20...120 N Diode Cth1 = 0.039 J/K; Rth1 = 0.311 K/W Cth2 = 0.090 J/K; Rth2 = 0.889 K/W ISOPLUS 247 OUTLINE Characteristic Values min. typ. max. 30 pF 6 g Dim. A A1 A2 b b1 b2 C D E e L L1 Q R S T U © 2005 IXYS All rights reserved Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 13.21 13.72 15.75 16.26 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 0528 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection 2-4 IXER 35N120D1 120 VGE = 17 V A 120 A 100 15 V 100 IC 13 V 80 VGE = 17 V 15 V IC 80 60 13 V 60 11 V 11 V 40 40 9V 20 9V 20 TVJ = 125°C TVJ = 25°C 0 0 0 1 2 3 4 0 6 V 7 5 1 2 3 4 VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 90 A 75 120 VCE = 20 V A 100 IC 6 V 7 5 VCE IF 80 60 60 45 TVJ = 125°C TVJ = 25°C 30 40 TVJ = 125°C 15 20 TVJ = 25°C 0 0 4 6 8 10 12 0 14 V 16 1 2 V 3 4 VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 20 10 V K/W 15 ZthJC VGE Typ. forward characteristics of free wheeling diode diode 1 IGBT 0.1 10 0.01 5 single pulse 0.001 VCE = 600 V IC = 35 A 0 0 40 80 120 160nC 200 0.0001 0.001 0.1 1 s 10 Fig. 6 Typ. transient thermal impedance 0528 Typ. turn on gate charge 0.01 t QG Fig. 5 MUBW3512E7 © 2005 IXYS All rights reserved 3-4 IXER 35N120D1 20 mJ 6 100 ns 90 td(on) 16 mJ 80 Eon 70 12 4 800 t 600 td(off) 2 30 200 10 A 60 tf 0 0 40 0 80 20 40 IC Typ. turn on energy and switching times versus collector current 8 mJ Eon Fig. 8 6 120 Eoff t ns IC = 35 A TVJ = 125°C 3 td(on) 600 80 2 40 1 0 0 10 400 td(off) tr 200 EREC(off) 0 10 20 30 40 50 tf 70 Ω 80 60 0 20 30 40 50 RG Fig. 9 70 12 15Ω IRM 24Ω 300 TVJ = 125°C VR = 600 V 10 39Ω 56Ω 50 8 30 tRR 56Ω 24Ω 15Ω 70A 39Ω 24Ω 15Ω 150 50A 75Ω 35A Qrr [µC] 200 75Ω trr [ns] 40 56Ω RG= 39Ω 250 RG= 75Ω IRM [A] Fig.10 Typ. turn off energy and switching times versus gate resistor 350 60 70 Ω 80 60 RG Typ. turn on energy and switching times versus gate resistor TVVJCE=600V = 125°C V =+-15V IFTjGE = 30 A =125°C VIFR=35A = 600 V t Eoff 4 2 800 VCE = 600 V mJ VGE = ±15 V ns Eon Typ. turn off energy and switching times versus collector current 4 160 VCE = 600 V VGE = ±15 V IC = 35 A TVJ = 125°C 0 80 A 60 IC Fig. 7 400 20 0 20 1000 RG = 39 Ω TVJ = 125°C 40 RG = 39 Ω TVJ = 125°C Erec(off) 0 Eoff 50 VCE = 600 V VGE = ±15 V Eon 4 Eoff t 1200 ns 60 tr 8 VCE = 600 V VGE = ±15 V 6 IF = 15A 4 20 100 10 50 7,5A 0 0 200 400 600 800 1000 -diF/dt [A/µs] 1200 1400 0 1800 0 0 200 400 600 800 1000 -di F /dt [A/µs] 1200 1400 1600 1800 Fig. 12 Typ. turn off characteristics of free wheeling diode 0528 Fig. 11 Typ. turn off characteristics of free wheeling diode 1600 2 © 2005 IXYS All rights reserved 4-4