IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A =1200V VCES VCE(sat) typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol 1200 V ± 20 V -o VGES TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C Symbol Conditions 50 32 A A 50 A VCES 10 µs 200 W h a s e IC25 IC90 Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 35 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C p VCE(sat) 2.2 2.6 4.5 2.8 V V 6.5 V 0.4 mA mA 200 nA 0.4 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 39 Ω 85 50 440 50 5.4 2.6 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 35 A 2 150 nF nC RthJC RthCH with heatsink compound 0.3 0.6 K/W K/W • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • ISOPLUS 247TM package - isolated back surface - low coupling capacity between pins and heatsink - high reliability - industry standard outline Applications • single switches • choppers with complementary free wheeling diodes • phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating 0644 td(on) tr td(off) tf Eon Eoff E = Emitter Features IGBT IGES C = Collector © 2006 IXYS All rights reserved 1-4 IXER 35N120D1 Diode Equivalent Circuits for Simulation Symbol Conditions IF25 IF90 TC = 25°C TC = 90°C 48 25 Symbol Conditions Characteristic Values min. typ. max. VF IF = 35 A; TVJ = 25°C TVJ = 125°C IRM t rr Erec(off) 2.5 1.9 IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V with heatsink compound Conduction A A 2.9 V V 51 80 A ns 1.8 mJ 0.6 1.2 K/W K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 45 mΩ Diode (typ. at TJ = 125°C) V0 = 1.26V; R0 = 15 mΩ Thermal Response u t RthJC RthCH Maximum Ratings Component Conditions Maximum Ratings -o Symbol TVJ Tstg IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions Cp coupling capacity between shorted pins and mounting tab in the case 2500 V~ 20...120 N Diode Cth1 = 0.039 J/K; Rth1 = 0.311 K/W Cth2 = 0.090 J/K; Rth2 = 0.889 K/W s ISOPLUS247TM OUTLINE h a Characteristic Values min. typ. max. 30 pF 6 g The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side This drawing will meet all dimensions requirement of JEDEC outline TO-247 AD except screw hole and except Lmax. © 2006 IXYS All rights reserved 0644 p Weight °C °C e VISOL -55...+150 -55...+125 IGBT Cth1 = 0.067 J/K; Rth1 = 0.108 K/W Cth2 = 0.175 J/K; Rth2 = 0.491 K/W 2-4 IXER 35N120D1 120 VGE = 17 V A 120 A 100 15 V 100 IC 15 V IC 13 V 80 VGE = 17 V 80 60 13 V 60 11 V 11 V 40 40 9V 20 9V 20 TVJ = 125°C TVJ = 25°C 0 0 0 1 2 3 4 0 6 V 7 5 1 2 3 4 VCE Fig. 2 Typ. output characteristics 120 90 A 75 u VCE = 20 V 100 IF -o IC t Fig. 1 Typ. output characteristics A 6 V 7 5 VCE 60 80 45 e 60 40 TVJ = 125°C TVJ = 25°C 4 6 8 15 0 0 a 0 10 12 TVJ = 25°C 30 s 20 TVJ = 125°C 14 V 16 1 2 Fig. 4 p h Fig. 3 Typ. transfer characteristics 20 V 3 4 VF VGE Typ. forward characteristics of free wheeling diode 10 K/W V 15 ZthJC VGE diode 1 IGBT 0.1 10 0.01 5 single pulse 0.001 VCE = 600 V IC = 35 A 0 0 40 80 120 160nC 200 0.0001 0.001 0.1 1 s 10 Fig. 6 Typ. transient thermal impedance 0644 Typ. turn on gate charge 0.01 t QG Fig. 5 MUBW3512E7 © 2006 IXYS All rights reserved 3-4 IXER 35N120D1 20 mJ 6 100 ns 90 td(on) 16 mJ 80 Eon 70 12 4 800 t 600 td(off) 2 30 200 10 A 60 tf 0 0 40 0 80 20 40 IC 8 td(on) 80 30 40 50 1 0 0 10 e 40 400 200 0 20 30 40 50 RG a Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor TVVJCE=600V = 125°C V =+-15V IFTjGE = 30 A =125°C VIFR=35A = 600 V 15Ω IRM 24Ω 56Ω 50 TVJ = 125°C VR = 600 V 10 8 200 75Ω 30 tRR 56Ω 24Ω 15Ω 70A 39Ω 24Ω 15Ω 150 50A 75Ω 35A Qrr [µC] 40 56Ω RG= 39Ω 250 RG= 75Ω IRM [A] 300 39Ω trr [ns] 60 12 350 p 70 70 Ω 80 60 RG h Fig. 9 t tf 70 Ω 80 60 600 2 s EREC(off) 20 3 td(off) tr 0 10 IC = 35 A TVJ = 125°C Eoff 4 2 t ns u 120 Eoff -o 6 800 VCE = 600 V mJ VGE = ±15 V ns Eon Typ. turn off energy and switching times versus collector current 4 160 mJ Eon Fig. 8 t Typ. turn on energy and switching times versus collector current VCE = 600 V VGE = ±15 V IC = 35 A TVJ = 125°C 0 80 A 60 IC Fig. 7 400 20 0 20 1000 RG = 39 Ω TVJ = 125°C 40 RG = 39 Ω TVJ = 125°C Erec(off) 0 Eoff 50 VCE = 600 V VGE = ±15 V Eon 4 Eoff t 1200 ns 60 tr 8 VCE = 600 V VGE = ±15 V 6 IF = 15A 4 20 100 10 50 7,5A 0 0 200 400 600 800 1000 -diF/dt [A/µs] 1200 1400 0 1800 0 0 200 400 600 800 1000 -di F /dt [A/µs] 1200 1400 1600 1800 Fig. 12 Typ. turn off characteristics of free wheeling diode 0644 Fig. 11 Typ. turn off characteristics of free wheeling diode 1600 2 © 2006 IXYS All rights reserved 4-4