IXEN 60N120 IXEN 60N120D1 NPT3 IGBT IC25 = 100 A = 1200 V VCES VCE(sat) typ. = 2.1 V in miniBLOC package C C G miniBLOC, SOT-227 B E153432 G E G E E IXEN 60N120 IXEN 60N120D1 C = Collector G = Gate E = Emitter * E C * Either Emitter terminal can be used as Main or Kelvin Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 1200 V ± 20 V IC25 IC90 TC = 25°C TC = 90°C 100 65 A A ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 100 VCES A tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 22 Ω; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 445 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 60 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff Cies QGon 2.1 2.5 4.5 2.7 V V 6.5 V 0.8 mA mA 200 nA 0.8 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 60 A VGE = ±15 V; RG = 22 Ω 80 50 680 30 7.2 4.8 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A 3.8 350 nF nC • optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • miniBLOC package - isolated copper base plate - screw terminals - kelvin emitter terminal for easy drive - industry standard outline Applications • single switches • choppers with complementary free wheeling diode • phaselegs, H bridges, three phase bridges e.g. for - power supplies, UPS - AC, DC and SR drives - induction heating 0.28 K/W 331 RthJC • NPT3 IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-4 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 IXEN 60N120 IXEN 60N120D1 Diode (D1 version only) Symbol Conditions IF25 IF90 TC = 25°C TC = 90°C Equivalent Circuits for Simulation Maximum Ratings Conduction 110 60 A A Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Conditions VF IF = 60 A, VGE = 0 V IF = 60 A, VGE = 0 V, TJ = 125°C 2.3 1.7 IRM IF = 60 A, -diF/dt = 500 A/µs, VR = 600 V 41 A t rr VGE = 0 V, TJ = 125°C 200 ns 2.7 RthJC V V IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.99 V; R0 = 25 mΩ Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 7 mΩ Thermal Response 0.6 K/W Component Symbol Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz MD mounting torque teminal connection torque Symbol Conditions RthCH with heatsink compound Weight -40...+150 -40...+150 °C °C 2500 V~ 1.5 1.5 Nm Nm (M4) (M4) IGBT (typ.) Cth1 = 0.14 J/K; Rth1 = 0.20 K/W Cth2 = 0.91 J/K; Rth2 = 0.08 K/W Diode (typ.) Cth1 = 0.08 J/K; Rth1 = 0.45 K/W Cth2 = 0.54 J/K; Rth2 = 0.15 K/W Characteristic Values min. typ. max. 0.1 K/W 30 g miniBLOC, SOT-227 B Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 37.80 30.30 38.20 1.186 1.489 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 V W 3.30 0.780 4.57 0.830 0.130 19.81 0.180 21.08 331 M4 screws (4x) supplied Dim. © 2003 IXYS All rights reserved 2-4 IXEN 60N120 IXEN 60N120D1 120 VGE = 17 V A 15 V 120 A 100 13 V 11 V 100 15 V VGE = 17 V 13 V 11 V IC IC 80 80 60 60 9V 9V 40 40 20 20 TVJ = 125°C TVJ = 25°C 0 0 0 1 2 V 3 0 4 1 2 VCE Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 160 160 VCE = 20 V A IC V 4 3 VCE A 120 120 IF TVJ = 125°C 80 80 40 40 TVJ = 125°C TVJ = 25°C TVJ = 25°C 0 0 4 6 8 10 12 0 V 14 1 2 3 V VF VGE Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 100 20 A V 15 300 ns trr 80 240 60 180 IRM VGE trr 10 40 5 VCE = 600 V IC = 50 A 120 TVJ = 125°C VR = 600 V IF = 60 A 20 IXEN60N120 0 0 0 100 200 300 400 nC 500 QG 0 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 331 Fig. 5 Typ. turn on gate charge 60 IRM © 2003 IXYS All rights reserved 3-4 IXEN 60N120 IXEN 60N120D1 20 td(on) mJ 16 8 100 ns 90 tr 12 70 t 8 Eon 20 30 2 20 200 Eoff 40 60 80 tf 0 100 A 120 20 40 60 IC Fig. 7 Typ. turn on energy and switching times versus collector current 15.0 VCE = 600 V VGE = ±15 V IC = 50 A TVJ = 125°C mJ 12.5 Eon 10.0 td(on) 12 10 t Eoff 8 6 100 4 2.5 50 2 0.0 0 0 tr 5.0 20 40 60 80 VCE = 600 V VGE = ±15 V IC = 50 A TVJ = 125°C mJ 150 Eon 100 Ω 120 td(off) t 600 400 Eoff 200 tf 0 20 40 60 0 100 Ω 120 80 RG Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 120 1 A diode K/W 100 ICM 1200 ns 1000 800 RG Fig. 9 0 100 A 80 IC Fig. 8 Typ. turn off energy and switching times versus collector current 300 ns 250 200 7.5 0 400 RG = 22 Ω TVJ = 125°C 0 0 VCE = 600 V VGE = ±15 V 4 10 0 600 t 60 40 RG = 22 Ω TVJ = 125°C 4 td(off) 6 Eoff 50 VCE = 600 V VGE = ±15 V ns mJ 80 Eon 800 IGBT 0.1 80 ZthJC 60 0.01 40 single pulse 0.001 RG = 22 Ω TVJ = 125°C 20 0 0 200 400 600 800 1000 1200 1400 V VCE Reverse biased safe operating area RBSOA IXEN60N120 0.01 0.1 1 s 10 t Fig. 12 Typ. transient thermal impedance 331 Fig. 11 0.0001 0.00001 0.0001 0.001 © 2003 IXYS All rights reserved 4-4