MMO 175 IRMS = 175 A VRRM = 800-1600 V AC Controller Modules Preliminary Data VRSM VDSM VRRM VDRM V V 800 1200 1600 800 1200 1600 A Type I/H MMO 175-08io7 MMO 175-12io7 MMO 175-16io7 G/F N Symbol Conditions Maximum Ratings IRMS ITRMS ITAVM TC = 85°C, 50 - 400 Hz, (per single controller) ITSM TVJ = 45°C VR = 0 175 125 80 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1500 1600 A A TVJ = 125°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1350 1450 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 11200 10750 A2s A2 s TVJ = 125°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9100 8830 A2 s A2s 150 A/µs 500 A/µs 1000 V/µs 10 5 W W PGAVM 0.5 W VRGM 10 V TVJ TVJM Tstg -40...+150 150 -40...+125 °C °C °C 2500 3000 V~ V~ I2t (di/dt)cr TC = 85°C; 180° sine TVJ = 125°C repetitive, IT = 80 A f = 50 Hz, tP = 200 µs VD = 2/3 VDRM IG = 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/µs (dv/dt)cr TVJ = 125°C; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGM TVJ = 125°C IT = ITAVM VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque (M4) Weight typ. tp = 30 µs tp = 300 µs t = 1 min t=1s Features • Thyristor controller for AC (circuit W1C acc. to IEC) for mains frequency • Isolation voltage 3000 V~ • Planar glass passivated chips • Low forward voltage drop • Lead suitable for PC board solering Applications • Switching and control of single and three phase AC circuits • Light and temperature control • Softstart AC motor controller • Solid state switches Advantages • Easy to mount with two screws • Space and weight savings • Improved temperature and power cycling • High power density • Small and light weight 1.5...2.0/14...18 Nm/lb.in. 18 g Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080806a 1-2 G MMO 175 Symbol Conditions Characteristic Values ID , IR TVJ = 125°C; VR = VRRM; VD = VDRM ≤ 5 mA VT IT ≤ 1.57 V VT0 rT For power-loss calculations only 0.85 3.7 V mΩ VGT VD = 6 V = 200 A; TVJ = 25°C TVJ = 25°C TVJ = -40°C ≤ ≤ 1.5 1.6 V V TVJ = 25°C TVJ = -40°C ≤ ≤ 100 200 mA mA 10 1: IGT, TVJ = 125°C V 3: IGT, TVJ = -40°C VG 3 2 1 IGT VD = 6 V VGD IGD TVJ = 125°C; VD = 2/3 VDRM ≤ ≤ 0.2 10 V mA IL TVJ = 25°C; tP = 10 µs IG = 0.45 A; diG/dt = 0.45 A/µs ≤ 450 mA IH TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 200 mA tgd TVJ = 25°C; VD = ½ VDRM IG = 0.45 A; diG/dt = 0.45 A/µs ≤ 2 µs RthJC per thyristor; DC per module 0.5 0.25 K/W K/W 1000 RthCH per thyristor; sine 180° el per module 0.12 0.06 K/W K/W μs dS dA a Creeping distance on surface Creepage distance in air Max. allowable acceleration 11.2 17.0 50 mm mm m/s2 typ. typ. 2: IGT, TVJ = 25°C 5 6 1 4 4: PGAV = 0.5 W 5: PGM = IGD, TVJ = 125°C 0.1 100 101 5W 6: PGM = 10 W 102 103 IG mA 104 Fig. 1 Gate trigger characteristics TVJ = 25°C tgd Dimensions in mm (1 mm = 0.0394") typ. 100 Limit 10 1 10 mA 100 1000 IG G Fig. 2 Gate trigger delay time IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080806a 2-2