IXYS IXFN39N90

IXFN 39N90
HiPerFETTM
Power MOSFETs
Single MOSFET Die
RDS(on)
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
=
=
=
900 V
39 A
0.22 Ω
trr ≤ 250 ns
G
S
S
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
900
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
900
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC= 25°C
39
A
IDM
TC= 25°C, pulse width limited by TJM
154
A
IAR
TC= 25°C
39
A
EAR
TC= 25°C
64
mJ
EAS
TC= 25°C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
700
W
Maximum Ratings
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
Md
Mounting torque
Terminal connection torque
t = 1 min
t=1s
2500
3000
V~
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
Weight
Symbol
Test Conditions
VDSS
BVDSS
V GS = 0 V, ID = 3 mA
Temperature dependence
900
VGH(th)
VGH(th)
V DS = VGS, ID = 8 mA
Temperature dependence
2.5
IGSS
V GS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V GS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
© 2001 IXYS All rights reserved
VDSS
ID25
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
V/K
3.68
5.0
V
V/K
±200
nA
100
2
µA
mA
0.22
Ω
-0.009
TJ = 25°C
TJ = 125°C
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
•
•
•
•
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
• Easy to mount
•
•
Space savings
High power density
98628B (9/01)
IXFN 39N90
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
gfs
VDS = 15 V; ID = 0.5 • ID25, pulse test
30
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
45
S
9200
pF
1360
pF
Crss
380
pF
td(on)
45
ns
68
ns
125
ns
30
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 1 Ω (External),
Qg(on)
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
390
nC
65
nC
190
nC
RthJC
0.18
RthCK
K/W
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t rr
QRM
IRM
K/W
0.05
Source-Drain Diode
M4 screws (4x) supplied
Dim.
tf
Qgs
miniBLOC, SOT-227 B
IF = IS, -di/dt = 100 A/µs, VR = 100 V
39
A
154
A
1.3
V
250
ns
µC
A
2.0
9.0
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXFN 39N90
Figure 1. Output Characteristics at 25OC
Figure 2. Output Characteristics at 125OC
45
80
ID - Amperes
60
TJ = 125OC VGS = 9V
8V
7V
6V
40
VGS = 9V
8V
7V
6V
35
ID - Amperes
TJ = 25OC
70
5V
50
40
30
20
30
5V
25
20
15
10
4V
10
4V
5
0
0
0
2
4
6
8
0
10 12 14 16 18 20
2
4
6
10 12 14 16 18 20
VDS - Volts
VDS - Volts
Figure 4. RDS(on) normalized to 0.5 ID25 value vs.TJ
Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID
2.4
2.4
VGS = 10V
2.2
VGS = 10V
2.2
2.0
RDS(ON) - Normalized
RDS(ON) - Normalized
8
TJ = 125OC
1.8
1.6
1.4
TJ = 25OC
1.2
2.0
ID = 39A
1.8
ID =19.5A
1.6
1.4
1.2
1.0
0.8
0
10
20
30
40
50
60
70
1.0
25
80
50
ID - Amperes
75
100
125
150
TJ - Degrees C
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
40
50
35
40
ID - Amperes
ID - Amperes
30
25
20
15
30
20
TJ = 125oC
10
10
5
TJ = 25oC
0
-50
-25
0
25
50
75
TC - Degrees C
© 2001 IXYS All rights reserved
100 125 150
0
3.5
4.0
4.5
5.0
VGS - Volts
5.5
6.0
IXFN 39N90
Figure 8. Capacitance Curves
Figure 7. Gate Charge
18
10
Ciss
16
VGS - Volts
Capacitance - pF
VDS = 450 V
ID = 19.50A
IG = 10 mA
8
6
4
14
f = 100kHz
12
10
2
8
6
4
Coss
2
Crss
0
0
0
50
0
100 150 200 250 300 350 400
5
10
15
20
25
30
35
40
VDS - Volts
Gate Charge - nC
Figure 9. Forward Voltage Drop of the Intrinsic Diode
100
VGS = 0V
ID - Amperes
80
TJ = 125OC
60
TJ = 25OC
40
20
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD - Volts
Figure 10. Transient Thermal Resistance
R(th)JC - K/W
1.000
0.100
Single Pulse
0.010
0.001
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025