HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, Note 1 IAR TC = 25°C 24 26 96 104 24 26 A A A A A A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C 24N50 26N50 24N50 26N50 24N50 26N50 5 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in. TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 Test Conditions 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 500 VGS(th) V DS = VGS, ID = 4 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 (TAB) TO-268 (D3) (IXFT) Case Style G G = Gate, S = Source, 4.5 V nA TJ = 25°C TJ = 125°C RDS(on) V GS = 10 V, ID = 0.5 ID25 Note 2 24N50Q 26N50Q © 2001 IXYS All rights reserved 25 1 µA mA 0.23 0.20 Ω Ω D = Drain, TAB = Drain Features l l l IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated l Fast switching l Molding epoxies meet UL 94 V-0 flammability classification Advantages l l VDS = VDSS VGS = 0 V (TAB) S V ±100 IDSS 0.23 Ω 0.20 Ω TO-247 AD (IXFH) l Symbol RDS(on) V/ns 300 TJ ID25 l Easy to mount Space savings High power density 98512G (5/01) IXFH 24N50Q IXFH 26N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 24 S 3900 pF 500 pF Crss 130 pF td(on) 28 ns 30 ns gfs V DS = 10 V; ID = 0.5 ID25, Note 2 14 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 2 Ω (External), 55 ns tf 16 ns Qg(on) 95 nC 27 nC 40 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.42 RthJC RthCK (TO-247) Source-Drain Diode Symbol Test Conditions IS V GS = 0 V K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 24N50Q 26N50Q 24 26 A A 24N50Q 26N50Q 96 104 A A 1.3 V 250 ns µC A ISM Repetitive; Note1 VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr QRM IRM K/W 0.25 IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.85 8 Note 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TO-247 AD Outline 1 2 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 3 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 2.2 2.6 A2 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline Dim. Min Recommended Footprint IXFT 24N50Q IXFT 26N50Q A A1 A2 b b2 C D E E1 e H L L1 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 L2 L3 L4 1.00 1.15 0.25 BSC 3.80 4.10 .039 .045 .010 BSC .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFH 24N50Q IXFH 26N50Q 60 50 40 40 6V 30 20 5V 10 4 8 12 16 6V 30 20 5V 10 0 0 0 20 0 4 8 VDS - Volts 12 16 20 VDS - Volts Fig.1 Output Characteristics @ Tj = 25°C Fig.2 Output Characteristics @ Tj = 125°C 2.4 2.8 VGS = 10V VGS = 10V 2.4 RDS(ON) - Normalized RDS(ON) - Normalized VGS=10V 9V 8V 7V TJ = 125OC ID - Amperes ID - Amperes 50 VGS=10V 9V 8V 7V TJ = 25OC IXFT 24N50Q IXFT 26N50Q TJ = 125oC 2.0 1.6 TJ = 25oC 1.2 10 20 30 40 50 ID = 26A 1.6 ID = 13A 1.2 0.8 25 0.8 0 2.0 60 50 75 100 125 150 TJ - Degrees C ID - Amperes Fig.3 RDS(on) vs. Drain Current Fig.4 Temperature Dependence of Drain to Source Resistance 30 50 IXF_26N50Q 25 40 ID - Amperes ID - Amperes IXF_24N50Q 20 15 10 30 TJ = 125oC TJ = 25oC 20 10 5 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees C Fig.5 Drain Current vs. Case Temperature © 2001 IXYS All rights reserved 0 0 2 4 6 8 VGS - Volts Fig.6 Drain Current vs Gate Source Voltage IXFH 24N50Q IXFH 26N50Q IXFT 24N50Q IXFT 26N50Q 10000 12 f = 1MHz 10 VGS - Volts 8 Capacitance - pF VDS = 250 V ID = 13 A IG = 10 mA 6 4 Ciss Coss 1000 Crss 2 100 0 0 20 40 60 80 100 0 120 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves 50 45 40 ID - Amperes 35 30 TJ = 125OC 25 20 TJ = 25OC 15 10 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Volts Fig.9 Drain Current vs Drain to Source Voltage 1.00 R(th)JC - K/W D=0.5 0.10 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.00 10-5 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds Fig.10 Transient Thermal Impedance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025