IXYS IXFN75N50

HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFN 80N50
IXFN 75N50
VDSS
ID25
RDS(on)
500 V
500 V
80 A
75 A
50 mΩ
55 mΩ
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
G
S
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
Transient
±30
V
ID25
TC = 25°C, Chip capability
75
80
300
320
A
A
A
A
80
A
IDM
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
S
G
VGSM
75N50
80N50
75N50
80N50
miniBLOC, SOT-227 B (IXFN)
E153432
S
D
G = Gate
S = Source
D = Drain
EAR
TC = 25°C
64
mJ
EAS
TC = 25°C
6
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
700
W
• miniBLOC, with Aluminium nitride
-55 ... +150
°C
TJM
150
°C
isolation
• Low RDS (on) HDMOSTM process
Tstg
-55 ... +150
°C
2500
3000
V~
V~
TJ
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Md
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
Weight
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3 mA
500
VGH(th)
VDS = VGS, ID = 8 mA
2
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
V GS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
80N50
75N50
© 2002 IXYS All rights reserved
g
V
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
•
•
•
•
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
4
V
±200
nA
100
2
µA
mA
Advantages
• Easy to mount
50
55
mΩ
mΩ
•
•
Temperature and lighting controls
Space savings
High power density
98538C (02/02)
IXFN 75N50
IXFN 80N50
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
gfs
VDS = 15 V; ID = 0.5 • ID25, pulse test
50
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Crss
70
S
9890
pF
1750
pF
460
pF
61
ns
70
ns
102
ns
27
ns
td(on)
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 1 Ω (External),
Qg(on)
380
nC
80
nC
173
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
RthJC
0.18
RthCK
0.05
Source-Drain Diode
M4 screws (4x) supplied
Dim.
tf
Qgs
miniBLOC, SOT-227 B
K/W
K/W
Millimeter
Min.
Max.
Inches
Min.
Max.
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
75N50
80N50
75
80
A
A
ISM
Repetitive;
pulse width limited by TJM
75N50
80N50
300
320
A
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.3
V
t rr
QRM
IRM
IF = 30A, -di/dt = 100 A/µs, VR = 100 V
250
ns
µC
A
1.2
8
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFN 75N50
IXFN 80N50
Figure 2. Output Characteristics at 125OC
Figure 1. Output Characteristics at 25OC
100
100
VGS = 9V
8V
7V
6V
ID - Amperes
80
VGS = 9V
8V
7V
6V
TJ = 125OC
80
ID - Amperes
TJ = 25OC
60
5V
40
5V
60
40
4V
20
20
4V
0
0
0
1
2
3
4
0
5
2
4
VGS = 10V
2.8
VGS = 10V
O
TJ = 125 C
RDS(ON) - Normalized
RDS(ON) - Normalized
2.6
2.4
2.2
2.0
1.8
1.6
1.4
TJ = 25OC
1.2
2.5
2.2
ID = 80A
1.9
ID =40A
1.6
1.3
1.0
0.8
0
10
20
30
40
50
60
70
1.0
25
80
50
75
ID - Amperes
125
150
Figure 6. Admittance Curves
50
80
40
ID - Amperes
100
60
40
20
30
TJ = 125oC
20
TJ = 25oC
10
0
-50
100
TJ - Degrees C
Figure 5. Drain Current vs. Case Temperature
ID - Amperes
10
Figure 4. RDS(on) normalized to 0.5 ID25
value vs. TJ
Figure 3. RDS(on) normalized to 0.5 ID25 value
vs. ID
2.8
8
VDS - Volts
VDS - Volts
3.0
6
-25
0
25
50
75
TC - Degrees C
© 2002 IXYS All rights reserved
100 125 150
0
4.0
4.5
5.0
5.5
6.0
VGS - Volts
6.5
7.0
7.5
IXFN 75N50
IXFN 80N50
Figure 8. Capacitance Curves
Figure 7. Gate Charge
10
30000
VDS = 250 V
ID = 40 A
IG = 10 mA
Ciss
10000
Capacitance - pF
VGS - Volts
8
6
4
f = 100kHz
Coss
1000
Crss
2
100
0
0
50
0
100 150 200 250 300 350 400
5
10
15
20
25
30
35
40
VDS - Volts
Gate Charge - nC
Figure 9. Forward Voltage Drop of the Intrinsic Diode
100
VGS = 0V
ID - Amperes
80
TJ = 125OC
60
40
TJ = 25OC
20
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Volts
Figure 10. Transient Thermal Resistance
R(th)JC - K/W
1.000
0.100
Single Pulse
0.010
0.001
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1