HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 IXFN 75N50 VDSS ID25 RDS(on) 500 V 500 V 80 A 75 A 50 mΩ 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V Transient ±30 V ID25 TC = 25°C, Chip capability 75 80 300 320 A A A A 80 A IDM TC = 25°C, pulse width limited by TJM IAR TC = 25°C S G VGSM 75N50 80N50 75N50 80N50 miniBLOC, SOT-227 B (IXFN) E153432 S D G = Gate S = Source D = Drain EAR TC = 25°C 64 mJ EAS TC = 25°C 6 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 700 W • miniBLOC, with Aluminium nitride -55 ... +150 °C TJM 150 °C isolation • Low RDS (on) HDMOSTM process Tstg -55 ... +150 °C 2500 3000 V~ V~ TJ VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3 mA 500 VGH(th) VDS = VGS, ID = 8 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) V GS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 80N50 75N50 © 2002 IXYS All rights reserved g V Either Source terminal of miniBLOC can be used as Main or Kelvin Source Features • International standard packages • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • • • • Battery chargers Switched-mode and resonant-mode power supplies DC choppers 4 V ±200 nA 100 2 µA mA Advantages • Easy to mount 50 55 mΩ mΩ • • Temperature and lighting controls Space savings High power density 98538C (02/02) IXFN 75N50 IXFN 80N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 0.5 • ID25, pulse test 50 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 70 S 9890 pF 1750 pF 460 pF 61 ns 70 ns 102 ns 27 ns td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), Qg(on) 380 nC 80 nC 173 nC VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.18 RthCK 0.05 Source-Drain Diode M4 screws (4x) supplied Dim. tf Qgs miniBLOC, SOT-227 B K/W K/W Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 75N50 80N50 75 80 A A ISM Repetitive; pulse width limited by TJM 75N50 80N50 300 320 A A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.3 V t rr QRM IRM IF = 30A, -di/dt = 100 A/µs, VR = 100 V 250 ns µC A 1.2 8 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFN 75N50 IXFN 80N50 Figure 2. Output Characteristics at 125OC Figure 1. Output Characteristics at 25OC 100 100 VGS = 9V 8V 7V 6V ID - Amperes 80 VGS = 9V 8V 7V 6V TJ = 125OC 80 ID - Amperes TJ = 25OC 60 5V 40 5V 60 40 4V 20 20 4V 0 0 0 1 2 3 4 0 5 2 4 VGS = 10V 2.8 VGS = 10V O TJ = 125 C RDS(ON) - Normalized RDS(ON) - Normalized 2.6 2.4 2.2 2.0 1.8 1.6 1.4 TJ = 25OC 1.2 2.5 2.2 ID = 80A 1.9 ID =40A 1.6 1.3 1.0 0.8 0 10 20 30 40 50 60 70 1.0 25 80 50 75 ID - Amperes 125 150 Figure 6. Admittance Curves 50 80 40 ID - Amperes 100 60 40 20 30 TJ = 125oC 20 TJ = 25oC 10 0 -50 100 TJ - Degrees C Figure 5. Drain Current vs. Case Temperature ID - Amperes 10 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID 2.8 8 VDS - Volts VDS - Volts 3.0 6 -25 0 25 50 75 TC - Degrees C © 2002 IXYS All rights reserved 100 125 150 0 4.0 4.5 5.0 5.5 6.0 VGS - Volts 6.5 7.0 7.5 IXFN 75N50 IXFN 80N50 Figure 8. Capacitance Curves Figure 7. Gate Charge 10 30000 VDS = 250 V ID = 40 A IG = 10 mA Ciss 10000 Capacitance - pF VGS - Volts 8 6 4 f = 100kHz Coss 1000 Crss 2 100 0 0 50 0 100 150 200 250 300 350 400 5 10 15 20 25 30 35 40 VDS - Volts Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 VGS = 0V ID - Amperes 80 TJ = 125OC 60 40 TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance R(th)JC - K/W 1.000 0.100 Single Pulse 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1