Preliminary Technical Information 600V XPTTM IGBT GenX3TM IXYN150N60B3 Extreme Light Punch through IGBT for 10-30kHz Switching VCES = IC110 = VCE(sat) tfi(typ) = E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M 600 600 V V VGES VGEM Continuous Transient ±20 ±30 V V IC25 ILRMS IC110 ICM TC = 25°C (Chip Capability) Terminal Current Limit TC = 110°C TC = 25°C, 1ms 240 200 130 720 A A A A IA EAS TC = 25°C TC = 25°C 75 750 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load ICM = 300 VCE VCES A tsc (SCSOA) VGE = 15V, VCE = 360V, TJ = 150°C RG = 82, Non Repetitive 8 μs PC TC = 25°C 830 W Maximum Ratings -55 ... +175 175 -55 ... +175 °C °C °C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in Nm/lb.in 30 g TJ TJM Tstg VISOL Md 50/60Hz IISOL 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Weight E G E C G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter Features Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE = 0V 600 VGE(th) IC = 250μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V V 5.5 25 μA 1 mA TJ = 150°C VCE = 0V, VGE = ±20V VCE(sat) IC = 150A, VGE = 15V, Note 1 TJ = 150°C © 2013 IXYS CORPORATION, All Rights Reserved V 1.86 2.26 nA 2.20 V V High Power Density Low Gate Drive Requirement Applications ±200 Optimized for Low Conduction and Switching Losses miniBLOC, with Aluminium Nitride Isolation International Standard Package Isolation Voltage 2500V~ Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages IGES 600V 130A 2.20V 114ns Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS100548A(11/13) IXYN150N60B3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 27 IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 150A, VGE = 15V, VCE = 0.5 • VCES td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 75A, VGE = 15V VCE = 400V, RG = 2 Note 2 Inductive load, TJ = 150°C C = 75A, VGE = 15V VCE = 400V, RG = 2 Note 2 RthJC RthCS Notes: SOT-227B miniBLOC (IXYN) 45 S 6430 410 140 pF pF pF 200 52 80 nC nC nC 34 68 3.3 158 114 2.6 ns ns mJ ns ns mJ 32 68 4.1 200 140 3.6 ns ns mJ ns ns mJ 0.05 0.18 °C/W °C/W 1. Pulse test, t 300μs, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXYN150N60B3 Fig. 1. Output Characteristics @ TJ = 25ºC 300 VGE = 15V VGE = 15V 14V 13V 12V 250 13V 12V 300 11V 250 200 I C - Amperes I C - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 350 10V 150 9V 100 11V 200 150 10V 100 9V 8V 50 50 8V 7V 0 0 0.5 1 1.5 2 2.5 3 7V 0 3.5 0 2 4 6 8 Fig. 3. Output Characteristics @ TJ = 150ºC 300 VGE = 15V 14V 13V 250 12 14 16 18 20 12V VCE(sat) - Normalized 10V 100 150 175 VGE = 15V 2.0 200 150 Fig. 4. Dependence of VCE(sat) on Junction Temperature 2.2 11V I C - Amperes 10 VCE - Volts VCE - Volts 9V I C = 300A 1.8 1.6 1.4 I C = 150A 1.2 1.0 50 8V 0.8 7V 6V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 I C = 75A 0.6 -50 5 -25 0 25 VCE - Volts 100 125 Fig. 6. Input Admittance 220 TJ = 25ºC 5.5 200 180 5.0 160 I C - Amperes 4.5 VCE - Volts 75 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 50 4.0 I C = 300A 3.5 3.0 2.5 120 100 TJ = 150ºC 25ºC 80 - 40ºC 60 150A 2.0 140 40 1.5 20 75A 1.0 8 9 10 11 12 VGE - Volts © 2013 IXYS CORPORATION, All Rights Reserved 0 13 14 15 4 5 6 7 8 VGE - Volts 9 10 11 IXYN150N60B3 Fig. 7. Transconductance Fig. 8. Gate Charge 90 16 TJ = - 40ºC, 25ºC, 150ºC 80 70 I C = 150A I G = 10mA 12 60 V GE - Volts g f s - Siemens VCE = 300V 14 50 40 30 10 8 6 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 I C - Amperes 100 120 140 160 180 200 220 QG - NanoCoulombs Fig. 10. Reverse-Bias Safe Operating Area Fig. 9. Capacitance 350 10,000 300 Cies 250 I C - Amperes Capacitance - PicoFarads 80 1,000 Coes 200 150 100 TJ = 150ºC f = 1 MHz RG = 2Ω dv / dt < 10V / ns 50 Cres 0 100 0 5 10 15 20 25 30 35 100 40 200 300 400 500 600 VCE - Volts VCE - Volts Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Forward-Bias Safe Operating Area 1 1000 100 I D - Amperes 25µs 100µs Z(th)JC - ºC / W VCE(sat) Limit 0.1 0.01 10 TJ = 175ºC TC = 25ºC Single Pulse 1ms 1 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.001 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXYN150N60B3 Fig. 13. Inductive Switching Energy Loss vs. Gate Resistance 9 Eoff 8 Eon - --- 9 7 8 6 TJ = 150ºC , VGE = 15V VCE = 400V 7 I C = 100A 5 5 4 4 3 3 I C = 50A 2 Eoff - MilliJoules 6 2 1 4 6 8 10 12 ---- VCE = 400V 4 5 3 3 1 2 50 55 60 65 70 ---- VCE = 400V 4 2 Eon - MilliJoules 3 3 I C = 50A 1 2 0 75 100 tfi 220 TJ = 150ºC, VGE = 15V td(off) - - - - 500 460 420 I C = 50A 180 380 160 340 140 300 120 260 I C = 100A 100 220 80 180 140 3 4 5 6 7 8 9 10 11 12 13 14 15 220 240 200 220 180 200 180 TJ = 150ºC 120 160 Fig. 18. Inductive Turn-off Switching Times vs. Junction Temperature tfi td(off) - - - - 240 RG = 2Ω , VGE = 15V VCE = 400V 220 I C = 50A 160 260 200 140 180 120 160 I C = 100A TJ = 25ºC 100 80 50 55 60 65 70 75 80 85 I C - Amperes © 2013 IXYS CORPORATION, All Rights Reserved 90 95 140 100 120 100 80 140 25 50 75 100 TJ - Degrees Centigrade 125 120 150 t d(off) - Nanoseconds 160 260 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - VCE = 400V 140 540 200 2 t f i - Nanoseconds tfi RG = 2Ω , VGE = 15V 180 1 100 RG - Ohms Fig. 17. Inductive Turn-off Switching Times vs. Collector Current 200 95 60 1 150 125 240 TJ - Degrees Centigrade 220 90 VCE = 400V 6 5 50 85 t d(off) - Nanoseconds I C = 100A 4 25 80 Fig. 16. Inductive Turn-off Switching Times vs. Gate Resistance 260 8 7 RG = 2Ω , VGE = 15V 5 E off - MilliJoules Eon 75 I C - Amperes t f i - Nanoseconds Eoff 4 TJ = 25ºC 2 14 Fig. 15. Inductive Switching Energy Loss vs. Junction Temperature 6 6 TJ = 150ºC RG - Ohms 7 7 RG = 2Ω , VGE = 15V 0 1 2 Eon 8 E on - MilliJoules 6 Eoff 5 E on - MilliJoules E off - MilliJoules 7 Fig. 14. Inductive Switching Energy Loss vs. Collector Current IXYN150N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Gate Resistance 160 tri 140 td(on) - - - - 84 140 76 120 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current tri VCE = 400V 60 I C = 100A 80 52 60 44 I C = 50A 40 36 20 28 0 3 4 5 6 7 8 9 10 11 12 13 14 tri 36 34 TJ = 150ºC 60 32 40 30 20 28 55 60 65 70 75 80 85 90 95 26 100 I C - Amperes Fig. 21. Inductive Turn-on Switching Times vs. Junction Temperature 140 TJ = 25ºC 80 50 15 RG - Ohms 160 VCE = 400V 100 0 20 2 38 t d(on) - Nanoseconds 100 t r i - Nanoseconds 68 t d(on) - Nanoseconds t r i - Nanoseconds 120 td(on) - - - - RG = 2Ω , VGE = 15V TJ = 150ºC, VGE = 15V 40 td(on) - - - - 42 40 RG = 2Ω , VGE = 15V VCE = 400V 38 100 36 I C = 100A 80 34 60 32 40 30 I C = 50A 20 0 25 50 75 100 125 t d(on) - Nanoseconds t r i - Nanoseconds 120 28 26 150 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXY_150N60B3(8D) 7-18-13