IXGK120N60B3 IXGX120N60B3 GenX3TM 600V IGBTs VCES IC110 VCE(sat) tfi(typ) Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching = = ≤£ = 600V 120A 1.8V 145ns TO-264 (IXGK) Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC = 25°C (Chip Capability) TC = 110°C Terminal Current Limit TC = 25°C, 1ms 280 120 160 600 A A A A SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load ICM = 300 VCE ≤ VCES A PC TC = 25°C 780 W -55 ... +150 °C TJ TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13/10 20..120/4.5..27 Nm/lb.in. N/lb. 10 6 g g TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque (IXGK) Mounting Force (IXGX) Weight TO-264 PLUS247 G C E Tab PLUS247TM (IXGX) G C E G = Gate C = Collector Tab E = Emitter Tab = Collector Features z z z z Optimized for Low Conduction and Switching Losses Square RBSOA High Current Handling Capability International Standard Packages Advantages z z High Power Density Low Gate Drive Requirement Applications Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVCES IC = 250μA, VGE= 0V 600 VGE(th) IC = 500μA, VCE = VGE 3.0 ICES VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V VCE(sat) IC = 100A, VGE = 15V, Note 1 © 2010 IXYS CORPORATION, All Rights Reserved z V 5.0 V 50 μA 3 mA TJ = 125°C IGES z 1.5 ±100 nA 1.8 V z z z z z z Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts DS99993A(09/10) IXGK120N60B3 IXGX120N60B3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 100 IC = 60A, VCE = 10V, Note 1 170 S VCE = 25V, VGE = 0V, f = 1MHz 14.6 790 140 nF pF pF IC = 120A, VGE = 15V, VCE = 0.5 • VCES 465 74 167 nC nC nC 40 ns 87 2.9 ns mJ 227 ns 145 ns 3.5 mJ 38 85 4.0 290 230 4.7 ns ns mJ ns ns mJ 0.15 0.16 °C/W °C/W Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Inductive load, TJ = 25°C IC = 100A, VGE = 15V VCE = 480V, RG = 2Ω Note 2 Eoff td(on) tri Eon td(off) tfi Eoff TO-264 AA ( IXGK) Outline Inductive load, TJ = 125°C IC = 100A, VGE = 15V VCE = 480V, RG = 2Ω Note 2 RthJC RthCS Terminals: Back Side Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 1 = Gate 2,4 = Collector 3 = Emitter Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247TM (IXGX) Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. Terminals: Dim. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 Millimeter Min. Max. Inches Min. Max. A A1 A2 4.83 2.29 1.91 5.21 2.54 2.16 .190 .090 .075 .205 .100 .085 b b1 b2 1.14 1.91 2.92 1.40 2.13 3.12 .045 .075 .115 .055 .084 .123 C D E e L L1 Q R IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 6,404,065 B1 6,534,343 6,583,505 1 - Gate 2 - Collector 3 - Emitter 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK120N60B3 IXGX120N60B3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 350 200 VGE = 15V 11V 9V 180 160 250 140 7V 120 IC - Amperes IC - Amperes VGE = 15V 11V 9V 300 100 80 60 200 7V 150 100 40 50 20 5V 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 1 2 3 4 6 7 8 9 10 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 200 1.4 VGE = 15V 11V 9V 180 160 VGE = 15V 1.3 VCE(sat) - Normalized 7V 140 IC - Amperes 5 VCE - Volts VCE - Volts 120 100 80 60 40 5V I 0 = 200A 1.2 1.1 I C = 100A I C = 50A 1.0 0.9 0.8 20 C 0.7 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 2.4 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 180 4.0 160 TJ = 25ºC 3.5 140 I C 2.5 = 200A 100A 50A IC - Amperes VCE - Volts 3.0 TJ = 125ºC 25ºC - 40ºC 120 100 80 60 2.0 40 1.5 20 1.0 0 5 6 7 8 9 10 11 VGE - Volts © 2010 IXYS CORPORATION, All Rights Reserved 12 13 14 15 3.5 4.0 4.5 5.0 5.5 VGE - Volts 6.0 6.5 7.0 IXGK120N60B3 IXGX120N60B3 Fig. 8. Gate Charge Fig. 7. Transconductance 300 16 TJ = - 40ºC 270 VCE = 300V 14 I C = 120A 240 210 25ºC 10 VGE - Volts g f s - Siemens I G = 10mA 12 180 125ºC 150 120 8 6 90 4 60 2 30 0 0 0 20 40 60 80 100 120 140 160 180 0 200 50 100 150 200 250 300 350 400 450 500 QG - NanoCoulombs IC - Amperes Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 100,000 350 f = 1 MHz 300 10,000 250 IC - Amperes Capacitance - PicoFarads Cies Coes 1,000 200 150 100 100 Cres 50 0 200 10 0 5 10 15 20 25 30 35 40 TJ = 125ºC RG = 2Ω dV / dt < 10V / ns 250 300 350 400 450 500 550 600 650 VCE - Volts VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.1 1 10 IXGK120N60B3 IXGX120N60B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance 8 Eoff --- VCE = 480V 6 7 I C = 100A 4 3 3 2 2 I C = 50A 1 2 3 4 6 5 6 7 8 9 10 11 12 13 14 E on - MilliJoules 4 Eoff Eon ---- 3.5 VCE = 480V 5 3.0 4 2.5 TJ = 125ºC 3 2.0 2 1 1 0 0 1.5 TJ = 25ºC 50 15 55 60 65 70 RG - Ohms 95 0.5 100 3.0 I C = 100A 2.5 td(off) - - - - 1000 TJ = 125ºC, VGE = 15V 240 3.5 5 1100 tfi 250 4.0 RG = 2Ω , VGE = 15V 4 90 260 t f i - Nanoseconds VCE = 480V 85 900 VCE = 480V 230 800 I C = 100A 220 700 210 600 3 2.0 2 1.5 190 400 1.0 180 300 0.5 125 170 I C = 50A 1 0 25 35 45 55 65 75 85 95 105 115 I 200 260 3 4 5 6 7 td(off) - - - - 360 260 340 240 280 160 260 140 240 TJ = 25ºC 100 55 60 65 11 12 13 14 15 340 tfi 70 75 80 85 IC - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 90 95 220 td(off) - - - - 320 300 VCE = 480V t f i - Nanoseconds t f i - Nanoseconds TJ = 125ºC 50 10 200 I C 280 = 100A, 50A 180 260 160 240 140 220 220 120 200 100 100 200 I C = 50A 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 180 125 t d(off) - Nanoseconds 300 t d(off) - Nanoseconds 320 200 120 9 RG = 2Ω , VGE = 15V VCE = 480V 180 8 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature RG = 2Ω , VGE = 15V 220 500 RG - Ohms Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 240 = 50A 200 2 TJ - Degrees Centigrade tfi C t d(off) - Nanoseconds 6 ---- E on - MilliJoules E off - MilliJoules 4.5 7 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 8 Eon 75 1.0 IC - Amperes Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff 4.0 RG = 2Ω , VGE = 15V 5 5 4.5 E on - MilliJoules 6 E off - MilliJoules Eon - TJ = 125ºC , VGE = 15V 8 E off - MilliJoules 7 7 IXGK120N60B3 IXGX120N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance 160 tri 140 td(on) - - - - 140 100 120 90 44 tri 80 I 80 C = 100A I C 60 = 50A t r i - Nanoseconds t r i - Nanoseconds 100 36 50 34 32 20 40 0 30 4 5 6 7 8 9 10 11 12 13 14 50 15 38 60 40 3 40 TJ = 25ºC, 125ºC 70 40 2 VCE = 480V 80 60 20 42 55 60 65 70 75 80 85 90 95 t d(on) - Nanoseconds 100 t d(on) - Nanoseconds VCE = 480V 120 td(on) - - - - RG = 2Ω , VGE = 15V TJ = 125ºC, VGE = 15V 30 100 IC - Amperes RG - Ohms Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 140 44 tri 120 42 80 40 38 I C = 100A 60 36 40 34 20 I C 32 = 50A 0 25 35 45 55 65 75 85 t d(on) - Nanoseconds VCE = 480V 100 t r i - Nanoseconds td(on) - - - - RG = 2Ω , VGE = 15V 95 105 115 30 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_120N60B3(86)9-09-10-A