Advance Technical Information IXGK82N120B3 IXGX82N120B3 GenX3TM 1200V IGBTs VCES = 1200V IC110 = 82A VCE(sat) ≤ 3.20V High-Speed Low-Vsat PT IGBTs for 3 - 20 kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 IC110 ILRMS ICM TC TC TC TC 230 82 120 500 A A A A IA EAS TC = 25°C TC = 25°C 41 750 A mJ SSOA (RBSOA) VGE = 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load ICM = 164 VCE < VCES A PC TC = 25°C 1250 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Features 300 260 °C °C z 1.13/10 20..120/4.5..14.6 Nm/lb.in. N/lb. 10 6 g g = 25°C ( Chip Capability ) = 110°C = 25°C ( Lead RMS Limit ) = 25°C, 1ms TJ TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.) from Case for 10 Md FC Mounting Torque ( IXGK ) Mounting Force ( IXGX ) Weight TO-264 PLUS247 G BVCES IC = 250μA, VCE = 0V VGE(th) IC = 1mA, VCE = VGE ICES VCE = VCES, VGE = 0V IGES VCE = 0V, VGE = ± 20V VCE(sat) IC Characteristic Values Min. Typ. Max. 1200 3.0 5.0 TJ = 125°C, Note 1 = IC110, VGE = 15V, Note 2 TJ = 125°C © 2009 IXYS CORPORATION, All Rights Reserved 2.70 2.64 G C E G = Gate C = Collector z z z z (TAB) E = Emitter TAB = Collector Optimized for Low Conduction and Switching Losses Square RBSOA High Avalanche Capability International Standard Packages High Power Density Low Gate Drive Requirement V Applications V z z ±100 nA z V V (TAB) Advantages 50 μA 5 mA 3.20 E E PLUS247TM (IXGX) z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) C z z z Power Inverters UPS SMPS PFC Circuits Welding Machines Lamp Ballasts DS100155(05/09) IXGK82N120B3 IXGX82N120B3 Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. IC = 60A, VCE = 10V, Note 2 35 Cies Coes TO-264 (IXGK) Outline 60 S 7900 pF 640 pF VCE = 25V, VGE = 0V, f = 1 MHz Cres 170 pF Qg(on) 350 nC Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES Qgc td(on) tri Inductive load, TJ = 25°C 50 nC 150 nC 30 ns 77 ns 5.0 mJ Eon IC td(off) VCE = 0.5 • VCES, RG = 2Ω 210 Note 3 100 180 ns Eoff 3.3 6.2 mJ td(on) 32 tfi = 80A, VGE = 15V ns ns Inductive load, TJ = 125°C 80 ns Eon IC = 80A, VGE = 15V 6.8 mJ td(off) VCE = 0.5 • VCES, RG = 2Ω tri tfi Note 3 Eoff 240 ns 520 ns 7.1 mJ 0.10 °C/W RthJC RthCK 0.15 °C/W PLUS247TM (IXGX) Outline Notes: 1. Part must be heatsunk for high-temp Ices measurement. 2. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. 3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) ADVANCE TECHNICAL INFORMATION Dim. The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGK82N120B3 IXGX82N120B3 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 320 180 VGE = 15V 13V 11V 160 240 120 9V IC - Amperes IC - Amperes 140 100 80 7V 60 9V 200 160 120 7V 80 40 40 20 5V 5V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 2 4 6 8 10 12 14 16 VCE - Volts VCE - Volts Fig. 3. Output Characteristics @ 125ºC Fig. 4. Dependence of VCE(sat) on Junction Temperature 18 20 1.5 180 VGE = 15V 13V 11V 160 VGE = 15V 1.4 1.3 120 VCE(sat) - Normalized 140 IC - Amperes VGE = 15V 13V 11V 280 9V 100 80 7V 60 I C = 164A I C = 82A I C = 41A 1.2 1.1 1.0 0.9 0.8 40 20 0.7 5V 0.6 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 4.5 -25 0 25 VCE - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.5 180 TJ = 25ºC 160 5.0 140 4.0 I C IC - Amperes VCE - Volts 4.5 = 164A 3.5 100 80 60 82A 3.0 120 TJ = 125ºC 25ºC - 40ºC 40 2.5 20 41A 2.0 0 6 7 8 9 10 11 12 VGE - Volts © 2009 IXYS CORPORATION, All Rights Reserved 13 14 15 3.5 4.0 4.5 5.0 5.5 6.0 VGE - Volts 6.5 7.0 7.5 8.0 8.5 IXGK82N120B3 IXGX82N120B3 Fig. 7. Transconductance Fig. 8. Gate Charge 100 16 TJ = - 40ºC 90 VCE = 600V 14 I C = 82A 70 25ºC 60 125ºC 12 I G = 10mA 10 VGE - Volts g f s - Siemens 80 50 40 8 6 30 4 20 2 10 0 0 0 20 40 60 80 100 120 140 160 180 0 50 100 Fig. 9. Capacitance 200 250 300 350 Fig. 10. Reverse-Bias Safe Operating Area 180 10,000 160 Cies 140 120 1,000 IC - Amperes Capacitance - PicoFarads 150 QG - NanoCoulombs IC - Amperes Coes f = 1 MHz Cres 80 60 40 TJ = 125ºC 20 RG = 2Ω dV / dt < 10V / ns Fig. 11. Maximum Transient Thermal Impedance 0 100 0 1.000 100 5 10 15 20 25 30 35 40 200 300 400 500 VCE - Volts 600 700 800 900 1000 1100 1200 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_82N120B3H1(8T)5-14-09 IXGK82N120B3 IXGX82N120B3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Switching Energy Loss vs. Collector Current 11 Eon - Eoff 10 --- 10 9 9 8 TJ = 125ºC , VGE = 15V C 7 = 80A 7 6 6 5 5 I C = 40A 4 3 2 3 4 5 6 7 8 9 10 11 12 13 14 Eoff - MilliJoules I Eon 6 5 5 4 3 4 2 2 3 1 1 2 0 0 20 25 30 35 40 6 4 5 3 4 I C = 40A 2 75 85 95 105 115 td(off) - - - - 700 550 600 500 I C 500 = 80A I 450 1 125 300 100 2 3 4 5 6 7 300 200 250 TJ = 25ºC 0 50 55 13 14 15 60 65 IC - Amperes © 2009 IXYS CORPORATION, All Rights Reserved 70 75 80 tfi td(off) - - - - 320 RG = 2Ω , VGE = 15V VCE = 600V 600 t f i - Nanoseconds 300 45 12 300 500 280 I C = 40A, 80A 400 260 300 240 200 220 200 100 200 150 0 25 35 45 55 65 75 85 TJ - Degrees Centigrade 95 105 115 180 125 t d(off) - Nanoseconds 350 TJ = 125ºC 40 11 340 700 450 400 35 10 800 t d(off) - Nanoseconds t f i - Nanoseconds td(off) - - - - 30 9 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature VCE = 600V 25 8 RG - Ohms RG = 2Ω , VGE = 15V 20 400 200 500 100 = 40A 350 700 400 C 2 Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 500 800 VCE = 600V TJ - Degrees Centigrade tfi 80 300 1 600 75 400 3 0 tfi 600 t f i - Nanoseconds E off - MilliJoules I C = 80A 65 70 TJ = 125ºC, VGE = 15V E on - MilliJoules 7 55 65 t d(off) - Nanoseconds VCE = 600V 45 60 900 650 8 6 35 55 700 9 RG = 2Ω , VGE = 15V 25 50 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance ---- 5 45 IC - Amperes 10 7 4 TJ = 25ºC 3 15 9 Eon 7 6 Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature Eoff TJ = 125ºC VCE = 600V RG - Ohms 8 8 ---- RG = 2Ω , VGE = 15V Eon - MilliJoules 8 Eoff 7 8 VCE = 600V Eon - MilliJoules Eoff - MilliJoules 9 9 IXGK82N120B3 IXGX82N120B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance tri 140 80 120 70 100 60 I C = 80A 80 I C = 40A 20 2 3 4 5 6 7 8 9 10 11 12 13 14 td(on) - - - - 34 VCE = 600V 80 32 30 TJ = 125ºC, 25ºC 28 40 26 30 20 24 20 0 40 40 tri RG = 2Ω , VGE = 15V 60 50 60 36 15 22 20 RG - Ohms t d(on) - Nanoseconds 100 140 t d(on) - Nanoseconds VCE = 600V 120 t r i - Nanoseconds td(on) - - - - TJ = 125ºC, VGE = 15V 90 t r i - Nanoseconds 160 25 30 35 40 45 50 55 60 65 70 75 80 IC - Amperes Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 110 40 tri 100 90 38 36 VCE = 600V 80 34 I C = 80A 70 32 60 30 50 28 40 I C t d(on) - Nanoseconds t r i - Nanoseconds td(on) - - - - RG = 2Ω , VGE = 15V 26 = 40A 30 24 20 25 35 45 55 65 75 85 95 105 115 22 125 TJ - Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: G_82N120B3H1(8T)5-14-09