Advance Technical Information IXTR102N65X2 X2-Class Power MOSFET VDSS ID25 = = 650V 54A 33m RDS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 650 650 V V VGSS VGSM Continuous Transient 30 40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 54 204 A A IA EAS TC = 25C TC = 25C 25 3 A J PD TC = 25C 330 W dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns -55 ... +150 150 -55 ... +150 C C C 300 260 °C °C TJ TJM Tstg TL TSOLD Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force 2500 V 20..120/4.5..27 N/lb 5 g Weight G D Isolated Tab S G = Gate S = Source D = Drain Features Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2500V~ Electrical Isolation Low QG Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 650 VGS(th) VDS = VGS, ID = 250μA 3.0 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 51A, Note 1 TJ = 125C © 2015 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings V 5.0 V 100 nA 25 500 A A 33 m Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls DS100681(8/15) IXTR102N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 51A, Note 1 RGi Gate Input Resistance Characteristic Values Min. Typ. Max 50 VGS = 0V, VDS = 25V, f = 1MHz 82 S 0.7 10.9 nF 6100 pF 12.6 pF 367 1420 pF pF 37 ns 28 ns 67 ns 11 ns 152 nC 57 nC 33 nC Ciss Coss ISOPLUS247 (IXTR) Outline Crss Effective Output Capacitance Co(er) Co(tr) Energy related td(on) Resistive Switching Times tr td(off) tf Time related VGS = 0V VDS = 0.8 • VDSS VGS = 10V, VDS = 0.5 • VDSS, ID = 51A RG = 2(External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 51A Qgd 1 = Gate 2,4 = Drain 3 = Source 0.38 C/W RthJC RthCS C/W 0.15 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 102 A ISM Repetitive, Pulse Width Limited by TJM 408 A VSD IF = IS , VGS = 0V, Note 1 1.4 V trr QRM IRM 450 IF = 51A, -di/dt = 100A/s 11.7 VR = 100V, VGS = 0V ns μC 52 A Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTR102N65X2 Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC 110 240 VGS = 10V 8V 100 VGS = 10V 90 80 70 I D - Amperes I D - Amperes 200 8V 160 7V 7V 60 6V 50 40 120 80 6V 30 20 40 5V 10 5V 0 0 0 0.5 1 1.5 2 2.5 3 0 3.5 5 10 VDS - Volts 15 20 25 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 51A Value vs. Junction Temperature Fig. 3. Output Characteristics @ TJ = 125ºC 110 3.5 VGS = 10V 7V 100 VGS = 10V 3.0 90 RDS(on) - Normalized 80 I D - Amperes 6V 70 60 50 40 30 5V 20 2.5 I D = 102A 2.0 I D = 51A 1.5 1.0 0.5 10 4V 0.0 0 0 4.5 1 2 3 4 5 6 7 8 -50 9 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 51A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 60 VGS = 10V 4.0 50 TJ = 125ºC 40 3.0 I D - Amperes RDS(on) - Normalized 3.5 2.5 2.0 30 20 TJ = 25ºC 1.5 10 1.0 0 0.5 0 40 80 120 160 I D - Amperes © 2015 IXYS CORPORATION, All Rights Reserved 200 240 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTR102N65X2 Fig. 7. Input Admittance Fig. 8. Transconductance 160 160 140 140 120 120 TJ = - 40ºC g f s - Siemens I D - Amperes 25ºC 100 TJ = 125ºC 25ºC - 40ºC 80 60 100 125ºC 80 60 40 40 20 20 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 20 40 60 VGS - Volts 80 100 120 140 160 120 140 160 I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 10 300 VDS = 325V 250 I D = 51A 8 I G = 10mA VGS - Volts I S - Amperes 200 150 100 6 4 TJ = 125ºC TJ = 25ºC 2 50 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 20 40 60 Fig. 11. Capacitance 100 Fig. 12. Output Capacitance Stored Energy 100,000 70 Ciss 60 10,000 1,000 E OSS - MicroJoules Capacitance - PicoFarads 80 QG - NanoCoulombs VSD - Volts C oss 100 50 40 30 20 10 10 C rss f = 1 MHz 1 0 1 10 100 1000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0 100 200 300 VDS - Volts 400 500 600 IXTR102N65X2 Fig. 13. Forward-Bias Safe Operating Area Fig. 14. Maximum Transient Thermal Impedance 1000 1 RDS(on) Limit 100 10 100µs Z (th)JC - ºC / W I D - Amperes 25µs 0.1 0.01 1 1ms TJ = 150ºC TC = 25ºC Single Pulse 10ms 0.1 1 10 100 VDS - Volts © 2015 IXYS CORPORATION, All Rights Reserved 1,000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS REF: T_102N65X2(X8-R4T50) 8-05-15-B