Data Sheet - IXYS Corporation

Preliminary Technical Information
IXTH64N65X
X-Class
Power MOSFET
VDSS
ID25
RDS(on)
= 650V
= 64A
 51m

N-Channel Enhancement Mode
TO-247 (IXTH)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
650
V
VDGR
TJ = 25C to 150C, RGS = 1M
650
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
64
A
IDM
TC = 25C, Pulse Width Limited by TJM
128
A
PD
TC = 25C
890
W
-55 ... +150
C
TJ
TJM
150
C
Tstg
-55 ... +150
C
300
260
°C
°C
1.13/10
Nm/lb.in
6
g
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque
Weight
G
D
Tab
S
G = Gate
S = Source
D
= Drain
Tab = Drain
Features



International Standard Package
Low RDS(ON) and QG
Low Package Inductance
Advantages


Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 1mA
650
VGS(th)
VDS = VGS, ID = 250μA
3.0
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
TJ = 125C
© 2015 IXYS CORPORATION, All Rights Reserved

High Power Density
Easy to Mount
Space Savings
V
5.0
V
Applications
100 nA

10 A
100 A



51 m

Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
DS100618C(6/15)
IXTH64N65X
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
30
RGi
Gate Input Resistance
52
S

1.5
D
A
A2
5500
Q
VGS = 0V, VDS = 25V, f = 1MHz
pF
4090
pF
80
pF
Crss
td(on)
tr
td(off)
tf
Energy related
Time related
D2
D1
P1
1
2
4
3
L1
C
E1
L
257
834
VGS = 0V
VDS = 0.8 • VDSS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1 (External)
Qg(on)
Qgs
S
D
Effective Output Capacitance
Co(er)
Co(tr)
A
B
E
R
Ciss
Coss
TO-247 Outline
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
pF
pF
22
ns
25
ns
80
ns
28
ns
143
nC
29
nC
70
nC
A1
C
b
b2
b4
e
1 - Gate
2,4 - Drain
3 - Source
0.14 C/W
RthJC
RthCS
C/W
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V, Note1
ISM
Characteristic Values
Min.
Typ.
Max
64
A
Repetitive, pulse Width Limited by TJM
256
A
VSD
IF = IS, VGS = 0V, Note 1
1.4
V
trr
QRM
IRM
IF = 32A, -di/dt = 100A/μs
450
10
44
VR = 100V
ns
C
A
Note 1. Pulse test, t  300s, duty cycle, d 2%.
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTH64N65X
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
70
180
VGS = 10V
8V
60
VGS = 10V
9V
160
140
8V
7V
120
I D - Amperes
I D - Amperes
50
40
30
100
80
7V
60
20
6V
40
10
20
5V
6V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
5
10
15
VDS - Volts
25
30
Fig. 4. RDS(on) Normalized to ID = 32A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
70
3.4
VGS = 10V
8V
60
VGS = 10V
3.0
2.6
RDS(on) - Normalized
7V
50
I D - Amperes
20
VDS - Volts
40
6V
30
20
I D = 64A
2.2
1.8
I D = 32A
1.4
1.0
10
0.6
5V
0.2
0
0
1
2
3
4
5
6
7
-50
8
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 32A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
4.0
150
1.3
VGS = 10V
3.5
1.2
BVDSS / VGS(th) - Normalized
RDS(on) - Normalized
TJ = 125ºC
3.0
2.5
2.0
TJ = 25ºC
1.5
1.0
BVDSS
1.1
1.0
0.9
0.8
0.7
0.5
VGS(th)
0.6
0
20
40
60
80
100
120
I D - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
140
160
180
-60
-40
-20
0
20
40
60
80
TJ - Degrees Centigrade
100
120
140
160
IXTH64N65X
Fig. 7. Maximum Drain Current vs.
Case Temperature
Fig. 8. Input Admittance
70
90
80
60
70
50
I D - Amperes
I D - Amperes
60
40
30
50
40
TJ = 125ºC
25ºC
- 40ºC
30
20
20
10
10
0
0
-50
-25
0
25
50
75
100
125
150
3.5
4.0
4.5
5.0
TC - Degrees Centigrade
5.5
6.0
6.5
7.0
7.5
VGS - Volts
Fig. 9. Transconductance
Fig. 10. Forward Voltage Drop of Intrinsic Diode
90
200
180
70
160
25ºC
60
50
140
I S - Amperes
g f s - Siemens
TJ = - 40ºC
80
125ºC
40
120
100
80
TJ = 125ºC
30
60
20
TJ = 25ºC
40
10
20
0
0
0
10
20
30
40
50
60
70
80
90
0.4
0.5
0.6
0.7
I D - Amperes
0.8
0.9
1.0
1.1
1.2
VSD - Volts
Fig. 12. Capacitance
Fig. 11. Gate Charge
100,000
10
VDS = 325V
Capacitance - PicoFarads
I D = 32A
8
VGS - Volts
I G = 10mA
6
4
10,000
C iss
1,000
Coss
100
2
Crss
f = 1 MHz
10
0
0
20
40
60
80
100
120
140
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1
10
100
VDS - Volts
1000
IXTH64N65X
Fig. 14. Forward-Bias Safe Operating Area
Fig. 13. Output Capacitance Stored Energy
1000
50
45
RDS(on) Limit
40
ID - Amperes
EOSS - MicroJoules
100
35
30
25
20
25µs
100µs
10
15
1ms
1
TJ = 150ºC
10
TC = 25ºC
Single Pulse
5
0
10ms
100ms
DC
0.1
0
100
200
300
400
500
600
10
100
VDS - Volts
1,000
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1
Z(th)JC - ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_64N65X(J8-R4T4) 6-17-15-A