Advanced Technical Information IXFH/IXFK/IXFT80N10 HiPerFETTM Power MOSFETs VDSS ID25 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C 80 320 80 A A A EAR EAS TC = 25°C TC = 25°C 30 1.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 360 TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TO-247 TO-264 TO-247/TO-268 TO-264 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 10 = 100 V = 80 A = 15 mW £ 200 ns RDS(on) TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G (TAB) S TO-264 AA (IXFK) G G = Gate S = Source D D (TAB) S TAB = Drain g g Features l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 1998 IXYS All rights reserved 100 2 TJ = 25°C TJ = 125°C V 4 V ±100 nA 25 1 µA mA 15 mΩ l l l l l International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Avalanche energy and current rated Fast intrinsic Rectifier Advantages l l l Easy to mount Space savings High power density 98524 (5/98) IXFH80N10 IXFK80N10 IXFT80N10 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 30 45 S 5400 pF TO-247 AD (IXFH) Outline 1 Ciss Coss 1800 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 890 pF td(on) 30 ns 70 ns 110 ns 33 ns 300 nC 40 nC 160 nC tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 td(off) RG = 1.5 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.35 TO-247 TO-264 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD t rr QRM IRM 0.25 0.15 Dim. K/W K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 A Repetitive; pulse width limited by TJM 320 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.75 V 200 ns µC A IF = IS -di/dt = 100 A/µs, VR = 100 V 1 6 TO-268 Outline 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025