HiPerFETTM Power MOSFETs Q-Class IXFH 6N100Q VDSS IXFT 6N100Q ID25 RDS(on) trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM 24 A IAR TC = 25°C, pulse width limited by TJM TC = 25°C 6 A EAR TC = 25°C 20 mJ 700 mJ 5 V/ns 180 W -55 ... +150 °C EAS dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM 150 °C Tstg -55 ... +150 °C 300 °C TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 Symbol Test Conditions VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 2.5 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS VGS = 0 V RDS(on) TO-247 AD (IXFH) TO-268 (D3) ( IXFT) G (TAB) S G = Gate S = Source D = Drain TAB = Drain 1.13/10 Nm/lb.in. 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 V Features z z z z z 2.0 4.5 V z ±100 nA TJ = 25°C TJ = 125°C 50 1 µA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.9 Ω © 1999 IXYS All rights reserved = 1000 V = 6A = 1.9 Ω IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density 98561A (6/99) IXFH 6N100Q IXFT 6N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 5 S 2200 pF 180 pF Crss 30 pF td(on) 10 ns Ciss Coss 3 VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 ns td(off) RG = 4.7 Ω (External), 22 ns tf 12 ns Qg(on) 48 nC 17 nC 22 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.7 (TO-247) Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD trr QRM IRM K/W 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 9 A Repetitive; pulse width limited by TJM 24 A IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.75 7.5 TO-247 AD (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 Outline Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025