HiPerFETTM Power MOSFETs Q-Class IXFH 30N40Q IXFT 30N40Q VDSS ID25 RDS(on) trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 400 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 400 V VGS Continuous ±20 V VGSM Transient ±30 V 30 A I D25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM I AR EAR 120 A TC = 25°C 30 A TC = 25°C 30 mJ 1.5 mJ 5 V/ns 300 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 300 °C EAS dv/dt I S £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TC = 25°C TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 Symbol Test Conditions VDSS VGS = 0 V, ID = 250 mA VGS(th) VDS = VGS, ID = 4 mA I GSS VGS = ±20 VDC, VDS = 0 I DSS VDS = VDSS VGS = 0 V RDS(on) 1.13/10 Nm/lb.in. 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 400 2.0 V 4.0 V ±100 nA TJ = 25°C TJ = 125°C 25 1 mA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.16 W © 2000 IXYS All rights reserved = 400 V = 30 A = 0.16 W TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S (TAB) G = Gate D = Drain S = Source TAB = Drain Features l l l l l l IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l Easy to mount Space savings High power density 98754 (10/00) IXFH 30N40Q IXFT 30N40Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 18 25 S 3300 pF 540 pF Crss 150 pF td(on) 25 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 35 ns td(off) RG = 2.0 W (External), 51 ns tf 12 ns Qg(on) 95 nC 22 nC 44 Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCK 0.42 (TO-247) Source-Drain Diode 0.25 Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD I F = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % t rr QRM IRM IF = IS, -di/dt = 100 A/ms, VR = 100 V 1.1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 nC b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 K/W C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ÆP Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC K/W 30 A 120 A 1.5 V 250 ns mC A 10 1 A A1 A2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol TO-247 AD (IXFH) Outline TO-268 Outline Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025