Advanced Technical Information IXFH 40N50Q IXFT 40N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 40 A ID25 RDS(on) = 0.14 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM IAR EAR 40 A 160 A TC = 25°C 40 A TC = 25°C 50 mJ 2.5 mJ 20 V/ns 500 W -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C 300 °C EAS dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque Weight TO-247 TO-268 Symbol Test Conditions VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) 1.13/10 Nm/lb.in. 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 4.5 V ±100 nA TJ = 25°C TJ = 125°C 25 1 µA mA VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 0.14 Ω © 2003 IXYS All rights reserved 2.5 V TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G (TAB) S G = Gate D = Drain S = Source TAB = Drain Features z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z Easy to mount z Space savings z High power density DS99002(01/03) IXFH 40N50Q IXFT 40N50Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 22 35 S 3800 pF 660 pF Crss 180 pF td(on) 17 ns 20 ns 56 ns 14 ns 130 nC 26 nC 58 nC Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 2.0 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.25 (TO-247) Source-Drain Diode 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % trr QRM IRM K/W IF = 25A, -di/dt = 100 A/µs, VR = 100 V 40 A 160 A 1.5 V 250 ns µC A 1.0 10 TO-247 AD (IXFH) Outline 1 2 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-268 Outline Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1