IXYS IXFH7N90Q_02

HiPerFETTM
Power MOSFETs
Q-Class
IXFH 7N90Q
IXFT 7N90Q
VDSS
ID25
RDS(on)
= 900 V
=
7A
= 1.5 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Preliminary Data
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
900
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
900
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
7
A
IDM
28
A
IAR
TC = 25°C,
pulse width limited by TJM
TC = 25°C
7
A
EAR
TC = 25°C
20
mJ
700
mJ
5
V/ns
180
W
-55 ... +150
°C
TO-268 (D3) ( IXFT)
EAS
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
TJ
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-268
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 1 mA
VGS(th)
VDS = VGS, ID = 2.5 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS
VGS = 0 V
RDS(on)
TO-247 AD (IXFH)
1.13/10
G
G = Gate
S = Source
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
900
V
Features
z
z
z
z
z
5.0
V
z
±100
nA
TJ = 25°C
TJ = 125°C
50
1
µA
mA
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
Ω
© 2002 IXYS All rights reserved
D = Drain
TAB = Drain
Nm/lb.in.
6
4
3.0
(TAB)
S
IXYS advanced low Qg process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low RDS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS98645A(12/02)
IXFH
IXFT
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 • ID25, pulse test
3
6
S
2200
pF
210
pF
Crss
35
pF
td(on)
15
ns
15
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 4.7 Ω (External),
42
ns
tf
13
ns
Qg(on)
56
nC
18
nC
24
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.7
RthJC
RthCK
(TO-247)
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
t rr
QRM
IRM
0.25
1
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
nC
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
K/W
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
∅P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
BSC
.170
242
.216
BSC
K/W
7
A
Repetitive; pulse width limited by TJM
28
A
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
250
ns
µC
A
0.75
5.5
TO-247 AD (IXFH) Outline
A
A1
A2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IF = IS, -di/dt = 100 A/µs, VR = 100 V
7N90Q
7N90Q
TO-268 Outline
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1