photomultiplier tubes r2693, r2693p

PHOTOMULTIPLIER TUBES
R2693, R2693P
Transmission Mode Low Noise Bialkali Photocathode
28 mm (1-1/8 inch) Diameter, Side-on Type
FEATURES
●Low Dark Current
●Low Dark Counts (R2693P)
●Wide Photocathode
●Excellent Spatial Uniformity
●Fast Time Response
APPLICATIONS
●Fluorescence Detector
●Chemiluminescence Detector
●Light Scattering Detector
SPECIFICATIONS
Figure 1: Electron Trajectories
GENERAL
Parameter
Description/Value
185 to 650
Spectral Response
375
Wavelength of Maximum Response
MateriaI
Low noise bialkali
Photocathode
Minimum Effective Area
16 (H) × 18 (W)
UV glass
Window Material
Structure
Circular-cage
Dynode
Number of Stages
9
1.2
Direct Interelectrode Anode to Last Dynode
Anode to All Other Electrodes
3.4
Capacitances
Base
11-pin base JEDEC No. B11-88
Operating Ambient Temperature
-30 to +50
Storage Temperature
-30 to +50
SuitabIe Socket
E678–11A (Sold Separately)
E717–63 (Sold Separately)
SuitabIe Socket Assembly
E717–74 (Sold Separately)
Unit
nm
nm
—
mm
—
—
—
pF
pF
—
°C
°C
—
—
—
3rd DYNODE
1st DYNODE
FOCUSING
ELECTRODES
2nd DYNODE
GLASS
BULB
PHOTOELECTRONS
PHOTOCATHODE
LIGHT
TPMSC0003EC
Figure 2: Typical Spatial Uniformity
X
●Y-Axis
100
100
90
90
80
80
RELATIVE OUTPUT (%)
Y
RELATIVE OUTPUT (%)
●X-Axis
70
60
50
40
30
20
SPOT SIZE: 1 mm
SUPPLY VOLTAGE: 1000 V
WAVELENGTH: 400 nm
60
50
40
30
20
10
0
-15
70
10
-10
CATHODE
ANODE
5
0
POSITION (mm)
5
10
15
0
-15
-10
CATHODE
ANODE
5
0
5
10
15
POSITION (mm)
TPMSB0066EB
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2013 Hamamatsu Photonics K.K.
PHOTOMULTIPLIER TUBES R2693, R2693P
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Between Anode and Cathode
Supply Voltage
Between Anode and Last Dynode
Average Anode Current A
Unit
V
V
mA
Value
1250
250
0.1
CHARACTERISTlCS (at 25 °C)
Parameter
Cathode Sensitivity
Anode Sensitivity
Quantum Efficiency at 375 nm
Luminous B
Radiant at 375 nm (Peak)
Blue Sensitivity Index C
Luminous D
Radiant at 375 nm (Peak)
Gain D
Anode Dark Current E (After 30 min Storage in Darkness)
Anode Dark Counts F (After 30 min Storage in Darkness)
ENI (Equivalent Noise Input) G
Anode Pulse Rise Time H
D
Time Response
Electron Transit Time J
Transit Time Spread (FWHM) K
L Current Hysteresis
Anode Current Stability
Voltage Hysteresis
R2693
for General Purpose
Min.
Typ.
Max.
—
—
20.5
—
30
50
—
—
62
—
—
7.0
—
100
300
—
—
3.7 × 105
—
—
6 × 106
5.0
—
0.5
—
—
—
—
—
8.4 × 10-17
—
—
1.2
—
18
—
—
—
1.0
—
0.5
—
—
—
1.0
R2693P
for Photon Counting
Min.
Typ.
Max.
—
20.5
—
50
—
30
—
62
—
—
7.0
—
300
—
100
3.7 × 105
—
—
—
—
6 × 106
0.5
—
0.2
—
50
20
—
—
5.3 × 10-17
—
—
1.2
—
—
18
—
—
1.0
—
—
0.5
—
—
1.0
Unit
%
µA/lm
mA/W
µA/lm-b
A/lm
A/W
—
nA
s-1
W
ns
ns
ns
%
%
NOTES
A: Averaged over any interval of 30 seconds maximum.
B: The light source is a tungsten filament lamp operated at a
distribution temperature of 2856 K. Supply voltage is 100 V
between the cathode and all other electrodes connected together
as anode.
C: The value is cathode output current when a blue filter (Corning
CS 5-58 polished to 1/2 stock thickness) is interposed between
the light source and the tube under the same condition as Note B.
D: Measured with the same light source as Note B and with the
voltage distribution ratio shown in Table 1 below.
Table 1: Voltage Distribution Ratio
Electrodes K Dy1 Dy2 Dy3
1
Ratio
1
1
1
• • • •
Dy7 Dy8 Dy9 P
1
1
1
H: The rise time is the time for the output pulse to rise from 10 %
to 90 % of the peak amplitude when the entire photocathode is
illuminated by a delta function light pulse.
J: The electron transit time is the interval between the arrival of
delta function light pulse at the entrance window of the tube and
the time when the anode output reaches the peak amplitube. In
measurement, the whole photocathode is illuminated.
K: Also called transit time jitter. This is the fluctuation in electron
transit time between individual pulses in the single photoelectron
mode, and may be defined as the FWHM of the frequency
distribution of electron transit times.
L: Hysteresis is temporary instability in anode current after light and
voltage are applied.
• • • • •
SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
Table 2: Voltage Distribution Ratio for Plateau Test
Electrodes K Dy1 Dy2 Dy3 • • • • Dy7 Dy8 Dy9 P
Ratio
1
1
1
1 • • • • •
1
2
1
SuppIy Voltage: Plateau Voltage, K: Cathode, Dy: Dynode, P: Anode
G: ENI is an indication of the photon-limited signal-to-noise ratio.
It refers to the amount of light in watts to produce a signal-to-noise
ratio of unity in the output of a photomultiplier tube.
ENI =
2q.ldb.G.∆f
S
where q = Electronic charge (1.60 × 10-19 coulomb).
ldb = Anode dark current (after 30 minutes storage) in amperes.
G = Gain.
∆f = Bandwidth of the system in hertz. 1 hertz is used.
S = Anode radiant sensitivity in amperes per watt at the
wavelength of peak response.
lmax.
Hysteresis =
lmin.
× 100 (%)
li
ANODE
CURRENT
E: Measured with the same supply voltage and voltage distribution
ratio as Note D after removal of light.
F: Measured at the plateau voltage.
l max.
li
l min.
TIME
0
5
6
7 (minutes)
TPMSB0002EA
(1)Current Hysteresis
The tube is operated at 750 V with an anode current of 1 µA for 5 minutes.
The light is then removed from the tube for a minute. The tube is then
re-illuminated by the previous light level for a minute to measure the variation.
(2)Voltage Hysteresis
The tube is operated at 300 V with an anode current of 0.1 µA for 5 minutes.
The light is then removed from the tube and the supply voltage is quickly
increased to 800 V. After a minute, the supply voltage is then reduced to the
previous value and the tube is re-illuminated for a minute to measure the variation.
Figure 3: Typical Spectral Response
Figure 4: Typical Time Response
TPMSB0060EA
200
CATHODE
RADIANT
SENSITIVITY
TPMSB0061EA
100
80
60
10
40
QUANTUM
EFFICIENCY
TRAN
TIME (ns)
1
SIT TIM
E
20
10
8
6
4
0.1
2
RISE
1
0.01
200
400
300
800
600
500
Figure 5: Typical Gain and Anode Dark Current (R2693)
TPMSB0062EA
1×105
106
10-7
N
EN
T
GAIN
10-8
10-9
AR
K
C
U
R
R
104
10-10
200
WAVELENGTH OF INCIDENT LIGHT: 450 (nm)
TEMPERATURE
: 25 (°C)
180
8×104
160
7×104
140
6×104
120
SIGNAL+DARK
5×104
100
4×104
80
3×104
60
2×104
40
DARK
1×104
20
AN
O
D
E
D
103
SIGNAL COUNTS (s-1)
10-6
ANODE DARK CURRENT (A)
107
G
1500
TPMSB0250EA
9×104
105
1000
Figure 6: Typical Plateau Characteristics (R2693P)
10-5
AI
700
SUPPLY VOLTAGE (V)
WAVELENGTH (nm)
108
TIME
DARK COUNTS (s-1)
CATHODE RADIANT SENSITIVITY (mA/W)
QUANTUM EFFICIENCY (%)
100
102
0
0
700 750 800 850 900 950 1000 1050 1100 1150 1200
10-11
101
300
400
500
600
800
1000
SUPPLY VOLTAGE (V)
10-12
1300
SUPPLY VOLTAGE (V)
Figure 7: Typical Temperature Coefficient
of Anode Sensitivity
TPMSB0064EA
100
TPMSB0065EB
+0.8
ANODE DARK CURRENT (nA)
TEMPERATURE COEFFICIENT (%/°C)
+1.2
Figure 8: Typical Temperature Characteristics
of Dark Current (R2693)
(at 1000 V, after 30 min storage)
+0.4
0
-0.4
10
1
0.1
-0.8
-1.2
200
0.01
300
400
500
WAVELENGTH (nm)
600
700
0
20
40
60
TEMPERATURE (°C)
80
100
PHOTOMULTIPLIER TUBES R2693, R2693P
Figure 9: Dimensional Outline and Basing Diagram (Unit: mm)
Figure 10: Socket (Unit: mm) Sold Separately
29.0 ± 1.7
E678-11A
18 MIN.
49
38
PHOTOCATHODE
5
DY6
6
7
DY7
DY2
33
8 DY8
DY3 3
90 MAX.
76 MAX.
49.0 ± 2.5
DY4 4
9 DY9
2
10
1
3.5
16 MIN.
DY5
5
P
11
K
DY1
DIRECTION OF LIGHT
18
4
29
32.2 ± 0.5
11 PIN BASE
JEDEC No. B11-88
HA TREATMENT
TPMSA0007ED
Figure 11: D Type Socket Assembly (Unit: mm)
TACCA0064EA
Sold Separately
E717-63
E717-74
HOUSING
(INSULATOR)
10
P
R10
DY8
8
DY7
7
26.0±0.2
TOP VIEW
5
4
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
31.0 ± 0.5
DY4
4
DY3
3
DY2
2
DY1
K
1
A
G
2.7
R5
R4
HOUSING
(INSULATOR)
POTTING
COMPOUND
22.4±0.2
K
°
10
R2
30°
8
C2
DY7
7
R8
C1
DY6
6
DY5
5
DY4
4
DY3
3
DY2
2
DY1
K
1
R6
R5
R1 to R10 : 330 kΩ
C1 to C3 : 10 nF
R3
0.7
R1
11
DY8
R4
SIDE VIEW
R3
C3
R9
R7
2
6
DY5
R10
9
32.0±0.5
C1
7
DY6
R6
0.7
30.0 +0
-1
450 ± 10
C2
R7
29.0 ± 0.3
SIGNAL
OUTPUT (A)
GND (G)
10
DY9
R8
SOCKET
PIN No.
P
9
R9
38.0 ± 0.3
49.0 ± 0.3
C3
PMT
14.0±0.5
DY9
SIGNAL GND
SIGNAL OUTPUT
RG-174/U(BLACK)
POWER SUPPLY GND
AWG22 (BLACK)
26.0±0.2
SOCKET
PIN No.
32.0±0.5
PMT
3.5
33.0 ± 0.3
5
R2
R1
11
-HV
AWG22 (VIOLET)
-HV (K)
4- 2.8
R13
* "Wiring diagram applies when -HV is supplied."
To supply +HV,connect the pin "G" to +HV, and the pin
"K" to the GND.
BOTTOM VIEW
TACCA0002EH
* Hamamatsu also provides C4900 series compact high voltage power
supplies and C12597-01 series DP type socket assembly which incorporate a DC to DC converter type high voltage power supply.
HAMAMATSU PHOTONICS K.K.
TACCA0277EA
Warning–Personal Safety Hazards
Electrical Shock–Operating voltages applied to this
device present a shock hazard.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Electron Tube Division
314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected]
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North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 SE-164 40 Kista, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: [email protected]
TPMS1014E03
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93581733, Fax: (39)02-93581741 E-mail: [email protected]
China: Hamamatsu Photonics (China) Co., Ltd.: B1201 Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86)10-6586-6006, Fax: (86)10-6586-2866 E-mail: [email protected]
DEC. 2013. IP