PHOTOMULTlPLlER TUBES R4220 R4220P(For Photon Counting) Very High Cathode Sensitivity with Low Noise Photocathode FEATURES Spectral Response ................................... 185 to 710 nm High Cathode Sensitivity Luminous ...................................................... 100 A/lm Radiant at 410nm ............................................ 70 mA/W High Anode Sensitivity (at 1000V) Luminous ....................................................... 1200A/lm Radiant at 410nm ..................................... 8.4 105 A/W Low Dark Current .................................................... 0.2nA Low Dark Counts (R4220P) ................................... 10 cps Hamamatsu R4220 features extremely high cathode sensitivity, high Gain, and low dark current. Variant tube (R4220P) specially selected for photon counting application is also available. The R4220 is useful for fluorescence, chemiluminescence, Raman spectroscopy and low light level detection. Figure 1: Typical Spectral Response GENERAL Spectral Response Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material Dynode Secondary Emitting Surface Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base Weight TPMSB0010EA Description/Value Unit 185 to 710 nm 410 nm Low noise bialkali 8 24 mm UV glass Low noise bialkali Circular-cage 9 4 6 11-pin base JEDEC No. B11-88 pF pF 45 g SuitabIe Socket E678–11A (option) SuitabIe Socket Assembly E717–21 (option) 100 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) Parameter 10 CATHODE RADIANT SENSITIVITY 1 QUANTUM EFFICIENCY 0.1 0.01 100 200 300 400 500 600 700 800 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. lnformation furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possibIe inaccuracies or ommissions. Specifications are subject to change without notice. No patent right are granted to any of the circuits described herein. © 1994 Hamamatsu Photonics K.K. PHOTOMULTlPLlER TUBES R4220, R4220P (For Photon Counting) MAXIMUM RATINGS (Absolute Maximum Values) Parameter Value Unit Between Anode and Cathode 1250 Vdc Between Anode and Last Dynode 250 Vdc 0.1 mA Supply Voltage Average Anode Current A CHARACTERISTlCS (at 25 ) Parameter Cathode Sensitivity Quantum Efficiency at 300nm (Peak) Luminous B Radiant at 410nm (Peak) BlueC Anode Sensitivity Luminous D Radiant at 400nm R4220 for General Purpose R4220P for Photon Counting Min. Min. Max. 23 100 70 8 80 1000 Gain E Typ. 1000 107 Max. Unit 23 100 70 8 % A/lm mA/W A/lm-b 1200 8.4 105 A/lm A/W 80 1200 8.4 105 1.2 Typ. 107 1.2 F Anode Dark Current After 30minutes Storage in the darkness Anode Dark CountsF ENI(Equivalent Noise Input) G 0.2 3.30 0.2 10 2.0 10-17 0.5 50 nA cps 10-17 3.30 W D Time Response Anode Pulse Rise Time H Electron Transit Time J Transit Time Spread (TTS) K 2.2 22 1.2 ns ns ns 0.1 1.0 0.1 1.0 % % L NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 150 volts between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below. E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: Measured at the voltage producing the gain of 1 106. G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G. f S q = Electronic charge (1.60 10-19 coulomb). ldb = Anode dark current(after 30 minute storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. J: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. K: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. L: Hysteresis is temporary instability in anode current after light and voltage are applied. lmax. Hysteresis = lmin. 100(%) li ANODE CURRENT Anode Current Stability Current Hysteresis Voltage Hysteresis 2.2 22 1.2 l max. li l min. TIME 5 0 6 7 (minutes) TPMSB0002EA (1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table 1:Voltage Distribution Ratio Electrodes Distribution Ratio K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 SuppIy Voltage : 1000Vdc K : Cathode, Dy : Dynode, 1 1 1 P : Anode 1 1 1 P 1 Figure 2: Typical Gain and Anode Dark Current TPMSB0011EA 10–5 108 10–6 107 10–7 106 100 80 60 TPMSB0004EB N AI G 10–8 105 T N RE 10–9 TIME (ns) 40 GAIN ANODE DARK CURRENT (A) Figure 3: Typical Time Response 104 R K AR 10–10 E OD 10–12 300 400 500 600 1000 10 8 4 102 2 101 1500 1 RISE 500 300 SUPPLY VOLTAGE (V) 700 1000 1500 Figure 5: Typical EADCI (Equivalent Anode Dark Current Input) vs. Supply Voltage TPMSB0013EA TPMSB0012EA 10-10 10–14 10-11 EADCI (lm) EQUIVALENT NOISE INPUT (W) TIME SUPPLY VOLTAGE (V) Figure 4: Typical ENI vs. Wavelength 10–13 IME 20 103 D 800 SIT T 6 CU AN 10–11 TRAN 10–15 10–16 10-12 10-13 10–17 100 200 300 400 500 600 700 10-14 300 800 400 WAVELENGTH (nm) 500 600 800 1000 1500 SUPPLY VOLTAGE (V) Data shown here, which is given from a relation among supply voltage, anode sensitivity and dark current, serves as a good reference in order to determine the most suitable supply voltage or its range. Figure 6: Typical Single Photon Pulse Height Distribution for R4220P TPMSB0014EC 1.0 TPMSB0015EA 104 0.8 0.6 WAVELENGTH OF INCIDENT LIGHT : 450 (nm) : 740 (V) (which is producing 106 SUPPLY VOLTAGE Current Amplification) LOWER LEVEL DISCRI. : 65 (ch) PHOTON+DARK COUNT : 5562 (cps) : 10 (cps) DARK COUNT AMBLENT TEMPERATURE : 25 (°C) 0.4 SIGNAL+DARK 0.2 103 DARK COUNT (cps) LOWER LEVEL DISCRI. COUNT PER CHANNEL FULL SCALE 104 (PHOTON+DARK) FULL SCALE 103 (DARK) Figure 7: Typical Temperature Characteristics of Dark Count for R4220P 102 101 100 DARK 0 200 400 600 CHANNEL NUMBER (CH) 800 1000 10–1 –20 0 +20 TEMPERATURE (°C) +40 +60 PHOTOMULTlPLlER TUBES R4220, R4220P (For Photon Counting) Figure 8: Dimensional Outline and Basing Diagram(Unit: mm) 28.5 Figure 10: Socket E678-11A (Optional) 1.5 8MIN. 49 38 PHOTOCATHODE 5 DY6 6 7 DY7 8 DY8 3.5 24MIN. DY4 4 33 DY5 9 DY9 2 10 29 P 11 K DY1 4 1 DIRECTION OF LIGHT 18 80MAX. 94MAX. DY2 49.0 2.5 5 DY3 3 BOTTOM VIEW (BASING DIAGRAM) 32.2 0.5 TACCA0064EA 11 PIN BASE JEDEC No. B11-88 TPMSA0001EA Figure 9: D Type Socket Assembly E717-21 (Optional) PMT 3.5 33.0 0.3 5 SOCKET PIN No. 10 P DY9 38.0 0.3 49.0 0.3 DY8 DY7 R10 C3 R9 C2 R8 C1 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK) 9 8 7 R7 DY6 6 DY5 5 DY4 4 DY3 3 DY2 2 DY1 K 1 4.8 29 R6 R to R10 : 330k C1 to C3 : 0.01 F R5 450 10 41.0 0.5 R4 31.0 0.5 R3 HOUSING (INSULATOR) POTTING COMPOUND R2 R1 11 –HV AWG22 (VIOLET) R1 to R10 : 330k C1 to C3 : 0.01 F TACCA0002ED Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning–Personal Safety Hazards Electrical Shock–Operating voltages applied to this device present a shock hazard. HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Färögatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741 TPMS1003E02 FEB. 1995