Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e , physical and chemical science, astronomy and s p a c e . Ba s e d o n l o n g ex p e r i e n c e i nvo l v i n g photonic technology, HAMAMATSU provides a wide variety of infrared detectors in order to meet a large range of application needs. In addition to the st andard devices listed in this catalog, custom devices are also available on request. Please feel free to contact the nearest sales office in your area. Contents InGaAs PIN photodiodes •••••••••••••••• PbS/PbSe photoconductive detectors ••••••••••••••••••••••••••••••••••••••••••••••••••••••• 1 Infrared detectors 1 9 InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors ••••••••••••••••••••••••••••••••••••••••••••••••••••••• 11 MCT (HgCdTe) photoconductive/ photovoltaic detectors Thermopile detectors (Si thermal detectors) •••••••••••••••••••••• ••••••••••••••••••••••••• 14 Photon drag detector •••••••••••••••••••••••••• 20 Accessories for infrared detectors ••••••••••••••••••••••••••••••••• 21 17 Description of terms Two-color detectors ••••••••••••••••••••••••••••• ••••••••••••••••••••••••••• 27 18 Infrared detectors 2 Infrared detectors HAMAMATSU infrared detectors Spectral response range (μm) Product name 0 1 2 0.5 0.9 0.9 InGaAs PIN photodiodes 1.7 • Short wavelength enhanced type • Can detect light from 0.5 μm 1.7 • Standard type • High-speed response, high sensitivity, low dark current • Available various types of photosensitive areas, arrays and packages 1.9 0.9 InGaAs image sensors 2.1 0.9 2.6 0.9 2.55 0 5 10 15 20 25 Page 1 1, 2 • For optical measurement around 1.7 μm • Available TE-cooled type 3 • For optical measurement in the band of water content absorption (1.9 μm) • Available TE-cooled type 3 • For NIR spectroscopy • Available TE-cooled type 4 • Types for spectrophotometry and WDM monitor, and high-speed type available Spectral response range (μm) Product name Features 3 Features 6 to 8 Page PbS photoconductive detectors 1 3.2 • Photoconductive detectors whose resistance decreases with the input of infrared light • Can be used at room temperatures in a wide range of applications such as radiation thermometers and flame monitors 9, 10 PbSe photoconductive detectors 1 • Detects wavelengths up to 5.2 μm • Offers higher response speed at room temperatures compared to other detectors used in the same wavelength range. Suitable for a wide range of applications such as gas analyzers. 9, 10 InAs photovoltaic detectors 1 3.8 • Covers a spectral response range close to PbS but offers higher response speed 11 InAsSb photovoltaic detectors 1 • Infrared detectors in the 5 μm or 8 μm spectral band, with high sensitivity and high reliability • High-speed response 11 InSb photovoltaic detectors 1 • High-speed and high sensitivity in so-called atmospheric window (3 to 5 μm) 12 InSb photoconductive detectors 1 • Detects wavelengths up to around 6.5 μm, with high sensitivity over long periods by thermoelectric cooling 12 MCT (HgCdTe) photoconductive detectors 1 • Various types with different spectral response range are provided by changing the HgTe and CdTe composition ratio. • High sensitivity photoconductive detectors whose resistance decreases with the input of infrared light • Available with TE-cooled type and cryogenic dewar 14, 15 MCT (HgCdTe) photovoltaic detectors 1 8.3 5.5 6.7 Si + PbS 0.2 3 Si + PbSe 0.2 4.85 Si + InGaAs 0.32 2.55 InGaAs + InGaAs 0.9 2.55 Photon drag detector 25 13.5 1 Thermopile detectors Two-color detectors 5.2 25 10 • High-speed response and low noise 15 • Sensors that generate thermoelectromotive force in proportion to the energy level of incident infrared light 17 • Wide spectral response range from UV to IR • Uses two detectors with different spectral response ranges, mounted one over the other along the same optical axis 18, 19 • High-speed detector with high sensitivity in 10 μm band (for CO 2 laser detection) • Room temperature operation with high-speed response 20 For detailed information on the products listed in this catalog, see their datasheets that are available from our website www.hamamatsu.com Spectral response of HAMAMATSU infrared detectors (typical example) 1014 Photovoltaic detectors Photoconductive detectors Si thermal detectors 1013 Short wavelength enhanced type InGaAs (25 °C) Long wavelength type InGaAs (-196 °C) D* (cm · Hz1/2/W) 1012 PbS (-20 °C) InAs (-196 °C) PbS (25 °C) 1011 MCT (-196 °C) InSb (-196 °C) MCT (-196 °C) MCT (-196 °C) InAsSb (-196 °C) 1010 Long wavelength type InGaAs (25 °C) InAsSb for 8 μm Band (-30 ˚C) 109 Si (25 °C) MCT (-60 °C) PbSe (25 °C) Thermopile PbSe (-20 °C) InAsSb (-30 °C) 108 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Wavelength (μm) KIRDB0259EG When using infrared detectors, the following points should be taken into consideration for making a device selection. Law of black body radiation (Planck's law) 104 As can be seen from the figure above, HAMAMATSU provides a variety of infrared detectors with different spectral response characteristics. It should be noted that cooling a detector element may affect its spectral response. For InGaAs, InAs, InSb and InAsSb detectors, the spectral response shifts to the shorter wavelength side; in contrast, for PbS, PbSe and MCT detectors it shifts to the longer wavelength side. 103 Response speed Various detectors are available with different response speeds. It should be noted that the response speeds of the PbS and PbSe detectors become worse with cooling. Photosensitive area and number of elements HAMAMATSU photosensors are available in a wide range of photosensitive area sizes. Also available are multi-element detector arrays optimized for high-speed multichannel spectrophotometry. Cooling Besides easy-to-use photosensors designed for room temperature, HAMAMATSU provides various types of sensors that are cooled with thermoelectric coolers, cryogenic dewars (for liquid nitrogen cooling). Object temperature When selecting a detector in accordance with the temperature of an object, it is necessary to consider the distribution of the energy (the wavelength dependency of the energy) radiated from the object. When the temperature of the object is changed, the distribution of the radiating energy is given by the law of black body radiation (Planck's law), as shown in the figure at the righthand side. The following relationship is established by the peak sensitivity wavelength λp (μm) and the absolute temperature T (K). λp · T=2897.9 Spectral radiance N. (W cm-2 sr-1μm-1) Spectral response 102 T(K)=6000 5000 4000 101 100 10-1 3000 2000 1500 1000 800 10-2 600 10-3 400 10-4 273 10-5 200 10-6 10-7 10-8 0.1 1 10 100 Wavelength (μm) KIRDB0014EB InGaAs PIN photodiodes Short wavelength enhanced type (Typ. Ta=25 °C, unless otherwise noted) Type no. Cooling Photosensitive area Spectral response range λ Peak sensitivity wavelength λp (mm) (μm) (μm) Cutoff frequency fc V R =1 V (MHz) G10899-003K ϕ0.3 300 G10899-005K ϕ0.5 150 G10899-01K Non-cooled ϕ1 0.5 to 1.7 1.55 Package Photo TO-18 C4159-03 (P.25) 45 G10899-02K ϕ2 10 G10899-03K ϕ3 5 Option (sold separately) TO-5 Standard type Metal package Various photosensitive area sizes are available. Type no. Cooling Photosensitive area (mm) G12180-003A ϕ0.3 G12180-005A ϕ0.5 G12180-010A ϕ1 G12180-020A ϕ2 G12180-030A ϕ3 G12180-050A Non-cooled Peak sensitivity wavelength λp (μm) Cutoff frequency fc (MHz) 600 (VR=5 V) 200 (VR=5 V) 60 (VR=5 V) 13 (VR=1 V) 7 (VR=1 V) 0.9 to 1.7 Package 3 (VR=1 V) TO-8 35 (VR=1 V) TO-18 G8370-82* ϕ2 TO-5 G8370-83* ϕ3 4 (VR=1 V) 2 (VR=1 V) G8370-85* ϕ5 0.6 (VR=1 V) TO-8 ϕ1 G12180-120A G12180-130A One-stage TE-cooled (Td=-10 °C) ϕ2 0.9 to 1.67 ϕ3 G12180-150A ϕ5 G12180-210A ϕ1 G12180-220A G12180-230A Two-stage TE-cooled (Td=-20 °C) Non-cooled * Low PDL (polarization dependent loss) type Infrared detectors 0.9 to 1.65 ϕ3 ϕ5 G12180-250A G6854-01 ϕ2 ϕ0.08 0.9 to 1.7 Option (sold separately) TO-5 ϕ1 1.55 Photo TO-18 G8370-81* G12180-110A 1 ϕ5 (Typ. Ta=25 °C, unless otherwise noted) Spectral response range λ (μm) 40 (VR=1 V) 13 (VR=1 V) 7 (VR=1 V) 3 (VR=1 V) 40 (VR=1 V) 13 (VR=1 V) 7 (VR=1 V) 3 (VR=1 V) TO-8 2000 (VR=5 V) TO-18 with CD lens C4159-03 (P.25) C4159-03 (P.25) A3179 (P.23) C1103-04 (P.22) C4159-03 (P.25) A3179-01 (P.23) C1103-04 (P.22) InGaAs PIN photodiodes Ceramic package (Typ. Ta=25 °C) Photosensitive area Type no. (mm) Spectral response range λ (μm) Peak sensitivity wavelength λp (μm) Cutoff frequency fc V R =5 V (MHz) ϕ0.2 G11193-02R Package Photo 1000 Surface mount type ceramic G11193-03R ϕ0.3 G8370-10 ϕ10 0.9 to 1.7 1.55 500 0.1 (VR=0 V) Ceramic Surface mount type (Typ. Ta=25 °C) Photosensitive area Type no. (mm) Spectral response Peak sensitivity Cutoff frequency wavelength fc range λ λp V R =5 V (MHz) (μm) (μm) ϕ1 G8941-01 Package Photo Type 35 0.9 to 1.7 ϕ0.5 G8941-02 200 Ceramic (non-sealed) Frontilluminated type Plastic COB 1.55 G8941-03 0.9 to 1.7 400 0.9 to 1.7 500 ϕ0.3 G11777-003P Spectral response G10899 series, etc. G12180 series (Typ. Ta=25 ˚C) G8370-81/-82/-83/-85 0.8 0.6 1.0 G6854-01 G8941 series Photosensitivity (A/W) Photosensitivity (A/W) 1.0 Si photodiode S1337-BQ 0.4 0.2 0 0.19 (Typ.) 1.2 G10899 series G11777-003P 1.0 0.8 0.6 0.4 Si photodiode S1337-BR 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (µm) 0 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Wavelength (µm) KIRDB0444EE G11193 series 0.8 0.6 G8370-10 0.4 0.2 0.2 0.4 (Typ. Ta=25 °C) 1.2 Td=25 ˚C Td=-10 ˚C Td=-20 ˚C Photosensitivity (A/W) 1.2 G11193 series, G8370-10, etc. 0 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (µm) KIRDB0374EB KIRDB0284EC Infrared detectors 2 Long wavelength type Peak sensitivity wavelength: 1.75 μm These are suitable for optical measurement around 1.7 μm. Type no. Cooling Photosensitive area (mm) Spectral response range λ (μm) (Typ. Ta=25 °C, unless otherwise noted) Peak sensitivity wavelength λp (μm) Cutoff frequency fc V R =0 V (MHz) G12181-003K ϕ0.3 90 G12181-005K ϕ0.5 35 G12181-010K Non-cooled ϕ1 0.9 to 1.9 Package Photo TO-18 C4159-03 (P.25) 10 G12181-020K ϕ2 2.5 G12181-030K ϕ3 1.5 G12181-103K ϕ0.3 140 ϕ0.5 50 Option (sold separately) TO-5 G12181-105K G12181-110K One-stage TE-cooled (Td=-10 °C) ϕ1 0.9 to 1.87 1.75 16 G12181-120K ϕ2 3.5 G12181-130K ϕ3 1.8 G12181-203K ϕ0.3 150 ϕ0.5 53 G12181-205K G12181-210K Two-stage TE-cooled (Td=-20 °C) ϕ1 0.9 to 1.85 17 G12181-220K ϕ2 3.7 G12181-230K ϕ3 1.9 TO-8 C4159-03 (P.25) A3179 (P.23) C1103-04 (P.22) TO-8 C4159-03 (P.25) A3179-01 (P.23) C1103-04 (P.22) Peak sensitivity wavelength: 1.95 μm These are suitable for optical measurement in the 1.9 μm band such as water absorption. Type no. Cooling Photosensitive area (mm) Spectral response range λ (μm) Peak sensitivity wavelength λp (μm) Cutoff frequency fc V R =0 V (MHz) G12182-003K ϕ0.3 90 G12182-005K ϕ0.5 35 G12182-010K Non-cooled ϕ1 (Typ. Ta=25 °C, unless otherwise noted) Package G12182-020K ϕ2 2.5 G12182-030K ϕ3 1.5 G12182-103K ϕ0.3 140 ϕ0.5 50 Option (sold separately) TO-18 C4159-03 (P.25) 10 0.9 to 2.1 Photo TO-5 G12182-105K G12182-110K One-stage TE-cooled (Td=-10 °C) 0.9 to 2.07 1.95 16 G12182-120K ϕ2 3.5 G12182-130K ϕ3 1.8 G12182-203K ϕ0.3 150 ϕ0.5 53 G12182-205K G12182-210K 3 ϕ1 Two-stage TE-cooled (Td=-20 °C) ϕ1 0.9 to 2.05 17 G12182-220K ϕ2 3.7 G12182-230K ϕ3 1.9 Infrared detectors TO-8 C4159-03 (P.25) A3179 (P.23) C1103-04 (P.22) TO-8 C4159-03 (P.25) A3179-01 (P.23) C1103-04 (P.22) InGaAs PIN photodiodes Peak sensitivity wavelength: 2.3 μm These are suitable for use in NIR (near infrared) spectroscopy. Type no. Cooling Photosensitive area (mm) Spectral response range λ (μm) (Typ. Ta=25 °C, unless otherwise noted) Peak sensitivity wavelength λp (μm) Cutoff frequency fc V R =0 V (MHz) G12183-003K ϕ0.3 50 G12183-005K ϕ0.5 20 G12183-010K ϕ1 Non-cooled 0.9 to 2.6 Package Option (sold separately) Photo TO-18 C4159-03 (P.25) 6 G12183-020K ϕ2 1.5 G12183-030K ϕ3 0.8 G12183-103K ϕ0.3 70 ϕ0.5 25 TO-5 G12183-105K One-stage TE-cooled (Td=-10 °C) G12183-110K ϕ1 0.9 to 2.57 7 2.3 G12183-120K ϕ2 2 G12183-130K ϕ3 0.9 G12183-203K ϕ0.3 75 ϕ0.5 28 G12183-205K Two-stage TE-cooled (Td=-20 °C) G12183-210K ϕ1 0.9 to 2.55 8 G12183-220K ϕ2 2.3 G12183-230K ϕ3 1 TO-8 C4159-03 (P.25) A3179 (P.23) C1103-04 (P.22) TO-8 C4159-03 (P.25) A3179-01 (P.23) C1103-04 (P.22) Spectral response G12181 series (Typ. VR=0 V) Photosensitivity (A/W) Photosensitivity (A/W) 1.2 0.8 0.6 0.4 0.2 0 0.8 (Typ. VR=0 V) 1.4 Td=25 °C Td=-10 °C Td=-20 °C G12183 series 0.8 0.6 0.4 0.2 1.0 1.2 1.4 1.6 1.8 2.0 KIRDB0483EC 1.0 0.8 0.6 0.4 0.2 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Wavelength (µm) Wavelength (µm) Td=25 °C Td=-10 °C Td=-20 °C 1.2 1.0 0 0.8 (Typ. VR=0 V) 1.4 Td=25 °C Td=-10 °C Td=-20 °C Photosensitivity (A/W) 1.2 1.0 G12182 series 0 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Wavelength (µm) KIRDB0487EC KIRDB0491EC Infrared detectors 4 Infrared detector modules with preamp These modules consist of the InGaAs PIN photodiode assembled with matched preamplifier, and operate by connecting a DC power supply. (Typ.) Type no. Detector G6121 C12485-210 Peak sensitivity wavelength λp (μm) (μm) ϕ5 25 1.70 1.55 2.05 1.95 2.56 2.30 1.66 1.55 2.4 2.0 Photosensitive area Cooling G8370-05 Cutoff wavelength λc (mm) Measurement condition Element temperature (°C) Non-cooled G12182-210K ϕ1 C12486-210 G12183-210K C12483-250 G12180-250A TE-cooled ϕ5 G12183-010 (chip) G12183-030 (chip) G7754-01 G7754-03 -15 ϕ1 Liquid nitrogen -196 ϕ3 Note: Supplied with a power supply cable Spectral response (Typ. Td=25 °C) 1013 C12483-250 G7754-01/-03 D*λ (cm ⋅ Hz1/2/W) G6121 1012 C12485-210 1011 C12486-210 1010 0.5 1 1.5 2 2.5 3 Wavelength (µm) KIRDB0369EE 5 Infrared detectors Photo InGaAs PIN photodiodes Image sensors, photodiode arrays InGaAs linear image sensors for spectrophotometry One-stage TE-cooled types can be cooled down to -10 °C and cover a spectral range from 0.9 to 1.67 μm. Type no. Cooling Pixel pitch Number of pixels (μm) G9211-256S 50 256 25 512 50 256 25 512 Photosensitive area (mm × mm) Spectral response range λ (μm) Defective pixels 0.9 to 1.67 1% max. Photo Applicable driver circuit (sold separately) 12.8 × 0.25 G9212-512S G9213-256S One-stage TE-cooled (Td=-10 °C) C8061-01 12.8 × 0.5 G9214-512S Output can be obtained from all pixels since there are no defective pixels. Suitable for precision measurement. Type no. Cooling Pixel pitch Number of pixels (μm) G9201-256S G9202-512S One-stage TE-cooled (Td=-10 °C) G9203-256D Non-cooled G9203-256S One-stage TE-cooled (Td=-10 °C) 50 256 25 512 (mm × mm) Spectral response range λ (μm) 12.8 × 0.25 0.9 to 1.67 Photosensitive area Defective pixels Photo Applicable driver circuit (sold separately) C8061-01 0.9 to 1.7 50 256 0.9 to 1.67 C8061-01 0 12.8 × 0.5 G9204-512D Non-cooled G9204-512S One-stage TE-cooled (Td=-10 °C) 0.9 to 1.7 25 512 0.9 to 1.67 C8061-01 Two-stage TE-cooled types can be cooled down to -20 °C, which make them suitable for measuring longer wavelengths from 0.9 to 2.55 μm. Type no. Cooling Pixel pitch Number of pixels (μm) G9205-256W 50 Photosensitive area (mm × mm) Spectral response range λ (μm) 256 Defective pixels Photo Applicable driver circuit (sold separately) 5% max. 0.9 to 1.85 G9205-512W 25 512 50 256 4% max. G9206-256W G9206-02 G9206-512W 0.9 to 2.05 Two-stage TE-cooled (Td=-20 °C) 12.8 × 0.25 25 512 50 256 G9207-256W C8062-01 0.9 to 2.15 4% max. 0.9 to 2.25 G9208-256W G9208-512W 5% max. 0.9 to 2.15 5% max. 0.9 to 2.55 25 512 0.9 to 2.55 4% max. Infrared detectors 6 High-speed type InGaAs linear image sensors These are high-speed linear image sensors suitable for industrial and measurement equipment. Type no. Cooling Pixel pitch Number of pixels Photosensitive area 256 12.8 × 0.05 (μm) G9494-256D 50 (mm × mm) Non-cooled G9494-512D 25 512 Spectral response range λ (μm) Defective pixels 0.9 to 1.7 1% max. Applicable driver circuit (sold separately) Photo C10820 12.8 × 0.025 These are 1024 pixels, high-speed NIR linear image sensors designed for applications such as a foreigh object screening and medical diagnostic equipment where a multichannel high-speed line rate is required. Type no. Cooling Pixel pitch Number of pixels (μm) Photosensitive area (mm × mm) G10768-1024D Spectral response range λ (μm) Defective pixels 0.9 to 1.7 1% max. Applicable driver circuit (sold separately) Photo 25.6 × 0.1 Non-cooled 25 1024 G10768-1024DB C10854 25.6 × 0.025 Back-illuminated type InGaAs linear image sensor These linear image sensors use a back-illuminated type InGaAs photodiode array that is bump-connected to a CMOS-ROIC with a single output terminal. Type no. Cooling Pixel pitch Number of pixels Photosensitive area (μm) (mm × mm) G11135-256DD 50 256 12.8 × 0.05 G11135-512DE 25 512 12.8 × 0.025 128 6.4 × 0.5 G11620-256DA 256 12.8 × 0.5 G11620-256DF 256 6.4 × 0.5 512 12.8 × 0.5 50 256 12.8 × 0.5 25 512 12.8 × 0.5 Spectral response range λ (μm) Defective pixels Applicable driver circuit (sold separately) Photo C11514 G11620-128DA Non-cooled 50 0.95 to 1.7 C11513 1% max. 25 G11620-512DA G11620-256SA One-stage TE-cooled (Td=-10 °C) G11620-512SA 0.95 to 1.67 Spectral response G10768 series G9201 to G9208 series, etc. (Typ.) 1.0 Td=25 °C G9206-256W Td=-10 °C Td=-20 °C G9205-256W G9201 to G9204/ G9211 to G9214/ G9494 series (Typ.) 1.2 50 °C G9207-256W 1.0 G9208-256W Photosensitivity (A/W) Photosensitivity (A/W) 1.5 G11135 series G11620 series 0.5 0.8 0 °C 0.6 25 °C 0.4 0.2 0 0.5 1.0 1.5 2.0 2.5 3.0 KMIRB0068EC Infrared detectors 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 Wavelength (µm) Wavelength (µm) 7 0 0.9 KMIRB0042EB InGaAs PIN photodiodes InGaAs area image sensors Here is a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs photodiode array. Type no. Pixel pitch Cooling Number of pixels Photosensitive area 64 × 64 3.2 × 3.2 (μm) G11097-0606S One-stage TE-cooled (Td=25 °C) G11097-0707S G12242-0707W 50 Applicable driver circuit (sold separately) Photo C11512 128 × 128 6.4 × 6.4 C11512-01 1% max. Two-stage TE-cooled (Td=15 °C) G12242-0909W Defective pixels 0.95 to 1.7 One-stage TE-cooled (Td=0 °C) G12460-0606S (mm × mm) Spectral response range λ (μm) 64 × 64 3.2 × 3.2 1.12 to 1.9 128 × 128 2.56 × 2.56 640 × 512 12.8 × 10.24 C11512 C11512-02 20 0.95 to 1.7 0.37% max. C12376 InGaAs photodiode arrays (Typ. Ta=25 °C) Photosensitive area Type no. (mm) G6849-01 ϕ1 (Quadrant element) G6849 ϕ2 (Quadrant element) Spectral response range λ (μm) Peak sensitivity wavelength λp (μm) Package Photo TO-5 G7150-16 0.45 × 1.0 (16-element) G7151-16 0.08 × 0.2 (16-element) G12430-016D 0.45 × 1.0 (16-element) G12430-032D 0.2 × 1.0 (32-element) G12430-046D 0.2 × 1.0 (46-element) G8909-01 ϕ0.08 (40-element) 0.9 to 1.7 1.55 Ceramic Ceramic (Non-sealed) Spectral response InGaAs area image sensors G12460-0606S (Typ. Ta=25 °C) 1.0 1.2 0.4 0.2 0.8 Photosensitivity (A/W) Photosensitivity (A/W) Photosensitivity (A/W) 0.6 0.8 0.6 0.4 1.2 1.4 1.6 1.8 Wavelength (µm) 0 0.8 0.6 0.4 0.2 0.2 1.0 (Typ. Ta=25 °C) 1.0 1.0 0.8 0 0.8 InGaAs photodiode arrays (Typ. Ta=25 °C) 1.0 1.2 1.4 1.6 1.8 2.0 0 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (µm) Wavelength (µm) KIRDB0002EB KMIRB0051EB KMIRB0078EA Infrared detectors 8 PbS/PbSe photoconductive detectors PbS and PbSe detectors are photoconductive sensors whose resistance decreases with the input of infrared light. PbS has a spectral response range from 1 to 3.2 μm, while the PbSe has a wider spectral range from 1.5 to 5.2 μm. PbS photoconductive detectors PbS photoconductive detectors are infrared sensors having a spectral response range from 1 to 3.2 μm. These sensors can be used at room temperature in a wide range of applications such as radiation thermometers and flame monitors. Type no. Photosensitive area Cooling (mm) P9217 Cutoff wavelength λc (μm) Peak sensitivity wavelength λp (μm) 2.9 2.2 Package (Typ.) Photo Option (sold separately) 1×5 P9217-02 2×2 P9217-03 TO-5 3×3 Non-cooled P9217-04 C3757-02 (P.26) 4×5 P2532-01 One-stage TE-cooled (Td=-10 °C) P2682-01 Two-stage TE-cooled (Td=-20 °C) TO-8 3.1 2.4 3.2 2.5 4×5 C3757-02 (P.26) A3179 (P.23) C1103-04 (P.22) TO-8 C3757-02 (P.26) A3179-01 (P.23) C1103-04 (P.22) Spectral response (Typ.) 1012 D* (λ, 600, 1) (cm · Hz1/2/W) P2682-01 (Td=-20 °C) P2532-01 (Td=-10 °C) 1011 P9217-04 (Td=25 °C) 1010 109 1 2 3 4 Wavelength (µm) KIRDB0375EA PbSe photoconductive detectors PbSe photoconductive detectors are infrared sensors having a spectral response range from 1.5 to 5.2 μm. These sensors deliver high sensitivity and high-speed response at room temperatures. Cooled types are also available with a higher S/N making them widely used in precision photometry such as analytical and measuring instrument. Type no. Cooling Photosensitive area (mm) P9696-02 2×2 P9696-03 3×3 Non-cooled P3207-08* P9696-102 P9696-103 P9696-202 P9696-203 2×2 One-stage TE-cooled (Td=-10 °C) 2×2 Two-stage TE-cooled (Td=-20 °C) 2×2 3×3 3×3 Cutoff wavelength λc (μm) Peak sensitivity wavelength λp (μm) 4.8 4.0 Infrared detectors Rise time max. (μs) 10 4.35 4.25 5.1 4.1 20 5.2 * Incorporates a band-pass filter, spectral response range: 4.15 to 4.35 μm 9 (Typ.) 4.2 Package TO-5 TO-8 Photo Option (sold separately) C3757-02 (P.26) C3757-02 (P.26) A3179 (P.23) C1103-04 (P.22) C3757-02 (P.26) A3179-01 (P.23) C1103-04 (P.22) PbS/PbSe photoconductive detectors Spectral response P9696 series P3207-08 (Typ.) Td=-20 °C 1010 Td=-10 °C Td=25 °C 109 108 1 2 3 4 5 6 (Typ.) 1010 D* (λ, 600, 1) (cm · Hz1/2/W) D* (λ, 600, 1) (cm · Hz1/2/W) 1011 109 108 107 4.0 7 4.1 Wavelength (µm) 4.2 4.3 4.4 4.5 Wavelength (µm) KIRDB0342EF KIRDB0540EB Infrared detector modules with preamp These modules consist of an infrared detector assembled with a matched preamplifier, and operate by connecting a DC power supply. (Typ.) Type no. Detector Measurement condition Photosensitive area Cooling (mm) PbSe (P9696-03) P4245 3×3 PbS (P2682-01) PbSe (P9696-203) P4638 P4639 Element temperature (°C) Non-cooled 25 TE-cooled -15 4×5 3×3 Cutoff wavelength λc Peak sensitivity wavelength λp (μm) (μm) 4.8 4.0 3.1 2.4 5.0 4.1 Photo Note: Supplied with a power supply cable Spectral response (Typ. Td=25 ˚C) D* (λ, 600, 1) (cm · Hz1/2/W) 1012 P4638 1011 1010 P4639 109 P4245 108 1 2 3 4 5 6 Wavelength (µm) KIRDB0370ED Infrared detectors 10 InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors InAs photovoltaic detectors are capable of detecting infrared light up to approx. 3.5 μm. InSb photovoltaic detector can sense infrared light up to approx. 5.5 μm, and InSb photoconductive detectors infrared light up to approx. 6 μm. InAsSb photovoltaic detectors also delivers high sensitivity in the 5 μm or 8 μm band. InSb photoconductive detectors are available in multi-element arrays (custom-made product). InAs and InSb photovoltaic detectors cover a spectral response range equivalent to PbS and PbSe photoconductive detectors, respectively, and feature higher response speed and better S/N. InAs photovoltaic detectors InAs photovoltaic detectors are high-speed, low-noise infrared detectors capable of detecting infrared light up to approx. 3.5 μm. Type no. Cooling Photosensitive area (mm) Cutoff wavelength λc (μm) Peak sensitivity wavelength Option (sold separately) Photo (μm) P10090-01 Non-cooled 3.65 3.35 P10090-11 One-stage TE-cooled (Td=-10 °C) 3.55 3.30 P10090-21 Two-stage TE-cooled (Td=-30 °C) TO-5 ϕ1 C4159-07 (P.25) A3179-01 (P.23) C1103-04 (P.22) C4159-06 (P.25) TO-8 Liquid nitrogen (Td=-196 °C) P7163 Package (Typ.) 3.45 3.25 3.10 3.00 A3179-01 (P.23) C1103-04 (P.22) C4159-06 (P.25) Metal dewar C4159-05 (P.25) InAsSb photovoltaic detectors This InAsSb photovoltaic detectors deliver high sensitivity in the 5 μm or 8 μm band due to our unique crystal growth technology. (Typ.) Type no. Cooling Photosensitive area (mm) Liquid nitrogen (Td=-196 °C) P11120-901 P11120-201 ϕ1 Two-stage TE-cooled (Td=-30 °C) P12691-201 Non-cooled P13243-011MA 0.7 × 0.7 Cutoff wavelength λc (μm) Peak sensitivity wavelength 5.8 4.8 5.9 4.9 Package Option (sold separately) Photo (μm) 8.3 6.7 5.3 3.5 Metal dewar C4159-01 (P.25) TO-8 C4159-07 (P.25) TO-46 - Spectral response InAsSb photovoltaic detectors InAs photovoltaic detectors C-H type CO2, SOX (Typ.) 1012 CO NOX (Typ.) 1011 P11120-901 (Td=-196 ˚C) 1011 D* (λ, 1200, 1)(cm · Hz1/2/W) D* (λ, 1200, 1) (cm · Hz1/2/W) P7163 (Td=-196 °C) P10090-21 (Td=-30 °C) 1010 109 P10090-11 (Td=-10 °C) P10090-01 (Td=25 °C) 108 107 2 3 4 P11120-201 (Td=-30 ˚C) 108 P13243-011MA (Td=25 ˚C) 2 3 4 5 6 7 8 9 Wavelength (µm) Wavelength (µm) Infrared detectors 109 107 1 11 P12691-201 (Td=-30 ˚C) 1010 KIRDB0356ED KIRDB0430EF InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors InSb photovoltaic detectors InSb photovoltaic detectors are high-speed, low-noise infrared detectors that deliver high sensitivity in the so-called atmospheric window between 3 and 5 μm. The infrared light in the 5 μm band can be detected with peak sensitivity and high response speed. A metal dewar type cooled with liquid nitrogen is also available. Type no. Cooling Cutoff wavelength λc (μm) Photosensitive area (mm) P5968-060 ϕ0.6 P5968-100 ϕ1 (Typ.) Peak sensitivity wavelength λp (μm) Package Option (sold separately) Photo C4159-01 (P.25) P5968-200 ϕ2 Liquid nitrogen (Td=-196 °C) P5968-300 C4159-04 (P.25) 5.5 5.3 Metal dewar Custom-made product ϕ3 0.25 × 1.4 (16-element) 0.45 × 0.45 (4 × 4-element) P4247-16 P4247-44 InSb photoconductive detectors Thermoelectrically cooled InSb photoconductive detectors are capable of detecting infrared light up to around 6 μm with high sensitivity and high speed. Type no. (Typ.) Cooling Cutoff wavelength λc (μm) Photosensitive area (mm) P6606-110 One-stage TE-cooled (Td=-10 °C) P6606-210 Two-stage TE-cooled (Td=-30 °C) Peak sensitivity wavelength λp (μm) Package Option (sold separately) Photo A3179-01 (P.23) C1103-07 (P.22) C5185-02 (P.26) 6.7 1×1 TO-8 A3179-01 (P.23) C1103-07 (P.22) C5185-02 (P.26) 6.5 5.5 P6606-310 1×1 Three-stage TE-cooled (Td=-60 °C) P6606-305 0.5 × 0.5 P6606-320 6.3 A3179-04 (P.23) C1103-05 (P.22) C5185-02 (P.26) TO-3 2×2 Spectral response InSb photoconductive detectors InSb photovoltaic detectors (Typ. Td=-196 °C) 1011 1010 1 2 3 4 5 (Typ.) 1011 D* (λp, 1200, 1) (cm ⋅ Hz1/2/W) D* (λp, 1200, 1) (cm ⋅ Hz1/2/W) 1012 P6606-310 (Td=-60 °C) 1010 P6606-210 (Td=-30 °C) 109 P6606-110 (Td=-10 °C) 108 107 6 1 2 3 4 5 6 7 Wavelength (µm) Wavelength (µm) KIRDB0063EE KIRDB0166EC Infrared detectors 12 Infrared detector modules with preamp These modules consist of the InSb detector assembled with the matched preamplifier, and operate by connecting a DC power supply. (Typ.) Type no. Detector Photosensitive area Measurement condition Cooling (mm) InSb (P6606-310) P4631-03 P7751-01*1 P7751-02*1 C12492-210 1×1 InSb (P5968-060) InSb (P5968-200) ϕ0.6 InAs (P10090-21) ϕ1 5.5 Liquid nitrogen -196 5.5 5.3 TE-cooled -28 3.45 3.25 ϕ2 (Typ.) D* (λ, 1200, 1) (cm ⋅ Hz1/2/W) P7751-01/-02 (Td=-196 °C) 1011 C12492-210 (Td=-28 °C) 1010 P4631-03 (Td=-58 °C) 109 108 3 4 5 6 7 Wavelength (µm) KIRDB0371EF 13 Infrared detectors (μm) 6.1 Spectral response 2 (μm) -58 Note: Supplied with a power supply cable 1 Peak sensitivity wavelength λp TE-cooled *1: FOV=60° 1012 Element temperature (°C) Cutoff wavelength λc Photo MCT (HgCdTe) photoconductive/photovoltaic detectors MCT photoconductive detectors decrease their resistance when illuminated by infrared light and are available with various ranges of spectral response up to 22 μm. MCT photovoltaic detectors generate a photocurrent when illuminated by infrared light. MCT photoconductive detectors Metal package Non-cooled type and one-stage TE-cooled type have sensitivity up to 10 μm, making them suitable for CO2 laser detection. Two or threestage TE-cooled types deliver high sensitivity in detecting short wavelengths. Type no. Cooling Photosensitive area (mm) (Typ.) Cutoff wavelength λc (μm) Peak sensitivity wavelength λp (μm) Package Photo Option (sold separately) P3257-30 Non-cooled 10.0 6.5 With BNC connector Custom-made product P3257-101 One-stage TE-cooled (Td=0 °C) 10.6 7.0 TO-8 A3179-01 (P.23) C1103-07 (P.22) 4.3 3.6 TO-8 4.3 3.6 TO- 66 5.4 4.8 TO-8 5.5 4.8 TO-3 P3981 P3981-01 1×1 Two-stage TE-cooled (Td=-30 °C) P2750-08 P2750 P2750-06 Three-stage TE-cooled (Td=-60 °C) A3179-01*2 (P.23) C1103-07 (P.22) C5185-03 (P.26) 1×1 A3179-04 (P.23) C1103-05 (P.22) C5185-03 (P.26) 0.25 × 0.25 *2: For P3981 and P2750-08. The heatsink for the P3981-01 is a custom product. Metal dewar type These include MCT detectors whose peak sensitivity at 10 μm wavelength is suitable for non-contact temperature measurements at room temperature and MCT detectors whose high sensitivity at longer wavelengths (narrow, medium, and wide wavelength bands) makes them suitable for FTIR. Type no. Cooling (Typ.) Photosensitive area (mm) P3257-25 0.025 × 0.025 P3257-01 0.1 × 0.1 P3257-10 1×1 P4249-08 0.5 × 0.5/ 8-element P2748-40 P2748-42 Liquid nitrogen (Td=-196 °C) Cutoff wavelength λc (μm) Peak sensitivity wavelength λp (μm) Package Photo Option (sold separately) A3515*3 (P.22) 12 10 Side-on type metal dewar 1×1 14 12 A3515 (P.22) C5185-02 (P.26) 0.25 × 0.25 P5274 1×1 17 14 P5274-01 1×1 22 17 P2748-41 1×1 14 12 Head-on type metal dewar *3: The amplifier for the P3257-25 is available upon request (custom-made product). Infrared detectors 14 Spectral response P3257-30/-101 P3981 series (Typ.) 108 P2750 series (Typ.) 12 10 (Typ.) 1011 107 106 P3257-30 (Td=25 °C) D* (λ, 1200, 1) (cm · Hz1/2/W) D* (λ, 1200, 1) (cm · Hz1/2/W) D* (λ, 600, 1) (cm ⋅ Hz1/2/W) P2750 (Td=-60 °C) P3257-101 (Td=0 °C) Td=-30 °C 11 10 10 Td=0 °C 10 10 1 2 3 4 5 6 7 8 9 10 11 12 1 2 9 10 3 4 1 5 2 3 KIRDB0164EG KIRDB0066EF P3257-01/-10/-25, P4249-08 4 5 6 Wavelength (µm) Wavelength (µm) Wavelength (µm) KIRDB0068EF P2748/P5274 series (Typ. Td=-196 °C) 1011 P2750-08 (Td=-30 °C) 108 9 105 1010 (Typ. Td=-196 °C) 1011 D* (λ, 1200, 1) (cm ⋅ Hz1/2/W) D* (λ, 1200, 1) (cm ⋅ Hz1/2/W) P2748-40/-41/-42 1010 109 P5274 1010 109 P5274-01 108 1 2 3 4 6 5 7 8 9 10 11 12 13 14 1 5 10 Wavelength (µm) 15 20 25 Wavelength (µm) KIRDB0169EB KIRDB0072EH MCT photovoltaic detectors (Typ.) Type no. Photosensitive area Cooling (mm) P9697-01 ϕ1 Spectral response (Typ. Td=-196 °C) D* (λ, 1200, 1) (cm ⋅ Hz1/2/W) 1011 1010 109 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Wavelength (µm) KIRDB0334EC 15 Infrared detectors Peak sensitivity wavelength λp (μm) Package 13 11 Metal dewar Photo Option (sold separately) ϕ0.5 Liquid nitrogen (Td=-196 °C) P9697-02 Cutoff wavelength λc (μm) C4159-07 (P.25) MCT (HgCdTe) photoconductive/photovoltaic detectors Infrared detector modules with preamp These modules consist of an MCT detector assembled with a matched preamplifier, and operates by connecting a DC power supply. (Typ.) Type no. Measurement condition Photosensitive area Detector Cooling (mm) C12495-211S MCT (P3981) C12495-311M MCT (P2750) TE-cooled Cutoff wavelength λc Peak sensitivity wavelength λp (μm) (μm) -25 4.3 3.6 -58 5.5 4.8 -3 11.5 6.5 -196 14 12 Element temperature (°C) Photo 1×1 C12495-111L MCT (P3257-101) C12495-411V MCT (P2748-40) Metal dewar Note: Supplied with a power supply cable Spectral response (Typ.) 1012 C12495-311M (Td=-58 °C) D* (λ, 1200, 1) (cm ⋅ Hz1/2/W) 1011 1010 C12495-411L (Td=-196 °C) 109 C12495-211S (Td=-25 °C) 108 C12495-111L (Td=-3 °C) 107 106 105 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Wavelength (µm) KIRDB0372EG Infrared detectors 16 Thermopile detectors (Si thermal detectors) Single-element type Hamamatsu provides high-sensitivity thermopile detectors suitable for gas concentration measurement, etc. Concentration of various types of gases can be measured by attaching a band-pass filter to thermopile detectors. The T11262-06 is suitable for flame detection and the T11361-05 for CO2 concentration measurement. Type no. Number of elements Package Photosensitive area (mm) T11262-01 T11262-06 TO-18 1 Window Spectral response (μm) AR-coated Si 3 to 5 Band-pass filter 4.45 AR-coated Si 3 to 5 Band-pass filter 4.3 Photo 1.2 × 1.2 T11361-01*1 T11361-05*1 *1: Built-in thermistor Dual-element type The T11722-01 is a dual-element type thermopile detector designed to detect CO2 concentrations with a high accuracy. It consists of a high sensitivity dual-element thermopile detector and two band-pass filters for sensing two wavelengths (reference: 3.9 μm, CO2: 4.3 μm) simultaneously. Type no. T11722-01 Package Number of elements Photosensitive area (mm) Window Spectral response (μm) TO-5 2 1.2 × 1.2 (per 1 element) Band-pass filter Reference: 3.9 CO2: 4.3 Photo Window options (typical examples of spectral response) Since thermopile detectors have no wavelength dependence, their spectral response characteristics are determined only by the transmittance of the window material. The graph below shows transmittance characteristics of typical window materials. Please contact our sales office about changing the window of a thermopile detector to the following materials. 100 AR-coated Si T11262-01 90 5 µm long pass 80 8 to 14 µm band-pass Transmittance (%) 70 3.9 µm band-pass T11722-01 (reference) 60 Si 50 4.3 µm band-pass T11722-01 (CO2) 40 30 4.4 µm band-pass 20 10 0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25 Wavelength (µm) KIRDB0512EA 17 Infrared detectors Two-color detectors Two-color detectors use a combination of two light sensors with different spectral response, in which one sensor is mounted over the other sensor along the same optical axis to provide a broad spectral response range. Thermoelectrically cooled two-color detectors are also provided that cool the sensors to maintain their temperatures constant, allowing high precision measurement with an improved S/N. Type no. (Typ.) Cooling Detector Photosensitive area (mm) K1713-01 K1713-002 K1713-05 Non-cooled K1713-08 K1713-09 K11908-010K K3413-01 K3413-002 One-stage TE-cooled (Td=-10 °C) K3413-05 K3413-08 K3413-09 K12728-010K Non-cooled K12729-010K Si 2.4 × 2.4 PbS 1.8 × 1.8 Si 2.4 × 2.4 PbSe 1.8 × 1.8 Si 2.4 × 2.4 InGaAs ϕ0.5 Si 2.4 × 2.4 InGaAs ϕ1 Si 2.4 × 2.4 InGaAs ϕ1 InGaAs 2.4 × 2.4 InGaAs ϕ1 Si 2.4 × 2.4 PbS 1.8 × 1.8 Si 2.4 × 2.4 PbSe 1.8 × 1.8 Si 2.4 × 2.4 InGaAs ϕ0.5 Si 2.4 × 2.4 InGaAs ϕ1 Si 2.4 × 2.4 InGaAs ϕ1 Si 2.4 × 2.4 InGaAs ϕ1 InGaAs 2.4 × 2.4 InGaAs ϕ1 Spectral response range λ (μm) Peak sensitivity wavelength λp (μm) 0.2 to 2.9 0.2 to 4.8 0.32 to 1.7 0.32 to 2.6 0.32 to 1.7 0.9 to 2.55 0.2 to 3.1 0.2 to 5.1 0.32 to 1.67 0.32 to 2.57 0.32 to 1.67 0.32 to 1.65 0.9 to 2.55 Photo sensitivity Package Option (sold separately) Photo S (A / W) 0.94 0.45 2.2 6 × 104 (V/W) 0.94 0.45 4.0 1.5 × 103 (V/W) 0.94 0.45 1.55 0.55 0.94 0.45 2.3 0.60 0.94 0.45 1.55 0.55 1.55 0.95 2.1 1.0 0.94 0.45 2.4 3 × 105 (V/W) 0.94 0.45 4.1 4.5 × 103 (V/W) 0.94 0.45 1.55 0.55 0.94 0.45 2.3 0.60 0.94 0.45 1.55 0.55 0.96 0.45 1.55 0.55 1.55 0.95 2.1 1.0 C9329 C3757-02 (P.26) TO-5 C9329 C4159-03 (P.25) C4159-03 (P.25) C9329 C3757-02 (P.26) A3179-03 (P.23) C1103-04 (P.22) TO-8 C9329 C4159-03 (P.25) A3179-03 (P.23) C1103-04 (P.22) Ceramic Spectral response K1713-01/-002, K3413-01/-002 [ Si photodiode ] [ PbS photoconductive detector ] (Typ. Ta=25 °C) 1014 [ PbSe photoconductive detector ] (Typ. Ta=25 °C) 1011 (Typ. Ta=25 °C) 1010 Td=-10 °C 1013 1012 0.2 0.4 0.6 0.8 1.0 1.2 Td=25 °C 1010 109 1.0 D* (λp, 600, 1) (cm ⋅ Hz1/2/W) D* (λ, 600, 1) (cm ⋅ Hz1/2/W) D*λ(cm ⋅ Hz1/2/W) Td=-10 °C 1.5 2.0 2.5 3.0 3.5 KIRDB0058EE Td=25 °C 108 107 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Wavelength (µm) Wavelength (µm) Wavelength (µm) 109 KIRDB0282EB KIRDB0283EC Infrared detectors 18 K1713-05/-08/-09 [ Si photodiode ] [ InGaAs PIN photodiode ] (Typ. Ta=25 °C) 0.7 0.6 Photosensitivity (A/W) Photosensitivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.5 0.4 K1713-08 0.3 K1713-05/-09 0.2 0.1 0 0.2 (Typ. Ta=25 °C) 0.7 0.1 0.4 0.6 0.8 1.0 0 0.8 1.0 1.2 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 Wavelength (µm) Wavelength (µm) KIRDB0199EA KIRDB0211EA K3413-05/-08/-09 [ InGaAs PIN photodiode ] [ Si photodiode ] (Typ. Ta=25 °C) 0.7 0.6 Photosensitivity (A/W) Photosensitivity (A/W) 0.6 0.5 0.4 0.3 0.2 0.5 0.4 K3413-08 0.3 K3413-05/-09 0.2 0.1 0 0.2 (Typ. Td=-10 °C) 0.7 0.1 0.4 0.6 0.8 1.0 0 0.8 1.0 1.2 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Wavelength (µm) Wavelength (µm) KIRDB0199EA KIRDB0212EA K11908-010K, K12729-010K K12728-010K (Typ. Ta=25 °C) 1.2 0.6 Photosensitivity (A/W) Photosensitivity (A/W) 0.8 InGaAs (λc=2.55 µm) 0.6 InGaAs (λc=1.7 µm) 0.2 Wavelength (µm) InGaAs 0.4 0.3 Si 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Wavelength (µm) KIRDB0479EB Infrared detectors 0.5 0.1 0 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 19 (Typ. Ta=25 °C) 0.7 1.0 0.4 2.8 KIRDB0598EB Photon drag detector The photon drag detector makes use of the “photon drag effect” in which holes created in a semiconductor by incident photons are dragged along in the direction of the photons, generating an electromotive force. Because of its sensitivity at 10.6 μm, this detector is suitable for detection of CO2 lasers. The surface of the detector element is coated with a non-reflective material. Non-cooled type (Typ.) Type no. Photosensitivity S λ=10.6 μm (V/ W) ϕ5.0 10.6 1.2 × 10-6 Photosensitive area Cooling B749 (mm) Peak sensitivity wavelength λp (μm) Non-cooled Magnet stand (sold separately) Photo A1447 Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±1) B749 Magnet stand A1447 79.5 ± 2 30 ± 1 1/4-20UNC BNC connector KIRDA0016EE 100 1/4-20UNC 160 min. 230 max. Photosensitive area 49.5 16.0 ± 0.5 20 5.5 20 KIRDA0017EA Infrared detectors 20 Accessories for infrared detectors HAMAMATSU provides following accessories for infrared detectors. · Temperature controllers (P.22) · Heatsinks for TE-cooled detector (P.23) · Chopper (P.24) · Amplifiers for infrared detectors (P.25) A connection example is shown below. Connection example *1 Power supply (±15 V) POWER OUT *2 Chopper C4696 TE-cooled detector*3 Measuring instrument Amplifier for infrared detector C4159/C5185 series C3757-02 Heatsink for TE-cooled detector A3179 series Power supply (100 V, 115 V, 230 V) ˚C GND +12 V POWER CHOPPER TRIG *3 Temperature controller C1103 series Chopper driver circuit (accessory of C4696) Power supply (+12 V) KACCC0321EB Cable no. Cable Length approx. Note Coaxial cable (for signal) 2m Supplied with heatsink A3179 series. When using this cable, make it as short as possible (preferably approx. 10 cm). 4-conductor cable (with a connector) A4372-05 3m Supplied with temperature controller C1103 series. This cable is also sold separately. Power supply cable (with a 4-conductor connector) A4372-02 2m This cable is supplied with the C4159/C5185 series amplifiers for infrared detectors, the C3757-02, and infrared detector modules with preamps (room temperature type). This cable is also sold separately. Besides this cable, the A4372-03, which is a power supply cable (with a 6-conductor connector) supplied with “infrared detector modules with preamps (cooled type)”, is also sold separately. BNC connector cable E2573 1m Option Power supply cable (for temperature controller) 1.9 m Chopper driver cable (connected to chopper) 2-conductor cable or coaxial cable (for chopper power supply) 2m 2 m or less Supplied with temperature controller C1103 series Connected to chopper driver circuit Prepared by user *1: Attach the bare wire ends to a 3-pin or 4-pin connector or to a banana jack, and then connect them to the power supply. *2: Soldering is needed. When using the C5185 series amplifier, a BNC connector (prepared by the user, example: one end of the E2573) is required. *3: No socket is available. Soldering is needed. Note: Refer to the datasheet "Accessories for infrared detectors" for detailed information about cables. 21 Infrared detectors Accessories for infrared detectors Temperature controllers C1103 series The C1103 series is a temperature controller designed for TE-cooled infrared detectors. The C1103 series allows temperature setting for the TE-cooler mounted in an infrared detector. Specifications Parameter C1103-04 C1103-05 One-stage/two-stage TE-cooled type PbS, PbSe photoconductive detectors, Two-stage/three-stage TE-cooled type One-stage TE-cooled type InAs photovoltaic detectors, MCT, InSb photoconductive detectors MCT, InSb photoconductive detectors InGaAs, Si photodiodes Applicable detector*4 Setting element temperature -30 to +20 °C -75 to -25 °C Temperature stability -30 to +20 °C Within ±0.1 °C Temperature control output current 1.1 A min., 1.2 A typ., 1.3 A max. 100 V ± 10% ⋅ 50/60 Hz* 5 Power supply Power consumption 30 W Dimensions 107 (W) × 87 (H) × 190 (D) mm Weight Approx. 1.9 kg Operating temperature +10 to +40 °C Operating humidity Storage C1103-07 90% max. temperature*6 -20 to +40 °C Instruction manual 4-conductor cable (with a connector, 3 m) A4372- 05* 7, power supply cable Accessories *4: It does not correspond to TE-cooled type infrared detector module with preamp. *5: Please specify power supply requirement (AC line voltage) from among 100 V, 115 V and 230 V when ordering. *6: No condensation *7: When used in combination with the A3179 series heatsink, do not use the 4-conductor cable supplied with the A3179 series, but use the A4372-05 instead. Block diagram C1103 series TE-cooled detector Thermistor Current circuit Amp circuit Comparator TE-cooled element Power supply AC input KIRDC0008EB Valve operator for metal dewar A3515 With this valve operator, metal dewars can be re-evacuated to maintain the desired vacuum level. Refer to the instruction manual for details. Please be aware that the detector performance is not guaranteed after re-evacuation is performed with the valve operator. Vaccum pump Valve operator Metal dewar type detector Dimensional outline (unit: mm) Pump tube 9.5 ± 0.5 Leak mount Gland nut O-ring Knob 80.0 ± 1 (closed) 115.0 ± 1 (open) KIRDA0021EC Infrared detectors 22 Heatsinks for TE-cooled detectors (TO-8, TO-3 package) A3179 series These heatsinks are designed for use with thermoelectrically cooled detector sealed in a 6-pin TO-8, TO-3 package. The cooling (heat dissipation) capacity of the A3179 and A3179-03 is approx. 35 ˚C relative to the ambient temperature 25 ˚C, the A3179-01 is approx. 40 ˚C, and that of the A3179-04 is approx. 85 ˚C. The A3179-03 is designed only for two-color detector K3413 series, the A3179 for one-stage TE-cooled TO-8, the A3179-01 for two-stage TE-cooled TO-8, the A3179-04 for TO-3 (heatsink for TO-66 is available as a custom product.). Instruction manual 4-conductor cable (2 m): for TE-cooler and thermistor*1 *2 Coaxial cable (2 m): for signal*2 Accessories *1: When used in combination with the C1103 series temperature controller, do not use the 4-conductor cable supplied with the A3179 series, but use the 4-conductor cable A4372-05 (sold separately, with a connector) that comes with the C1103 series. *2: No socket is supplied for connection to infrared detectors. Connect infrared detectors by soldering. Cover the soldered joints and detector pins with vinyl insulating tubes. Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.3) A3179 (4 ×) 3.5 32 *1 0.4 ± 0.3*2 Photosensitive surface*3 32 (4 ×) 3.5 3 0.3 60˚ 3 32.6 B 46 40 ± 26.0 ± 0.2 Detector metal package 32 32 3 Photosensitive surface*3 Detector metal package 46 0.4 ± 0.3*2 26.0 ± 0.2 *1 A3179-01, A3179-03 40 ± 0.3 60˚ 36 Weight: approx. 50 g *1: Bottom surface (reference surface) of detector metal package *2: When the detector is installed *3: The position of the photosensitive surface differs according to the detector used. Refer to the dimensional outline for the detector. KIRDA0018EE A3179-01: B=6 A3179-03: B=6.4 Weight: approx. 53 g *1: Bottom surface (reference surface) of detector metal package *2: When detector is installed *3: The position of the photosensitive surface differs according to the detector used. Refer to the dimensional outline for the detector. KIRDA0019EE 3 ± 0.5 A3179-04 (4 ×) 3.5 ± 0.5 56 40 ± 0.3 1 +0 .7 Photosensitive surface 19 38 ± 0.5 Fixation board 56 6.7 ± 0.5 68 ± 0.3 45 80 Weight: approx. 320 g KIRDA0149EC 23 Infrared detectors Accessories for infrared detectors Chopper C4696 Specifications Parameter Specification Chopping frequency 115 to 380 Hz, 345 Hz typ.*3 Operating voltage VD DC 5 to 13 V, 12 V typ. Duty ratio 1:1 Rotational stability 0.06%/°C Min. Sync signal VH (high level) VD - 0.5 V Max. VD - 0.2 V Operating temperature 0 to 50 °C Maximum current consumption*4 90 mA Accessories Magnet stand A1447 (see P.20), driver circuit *3: Chopping frequency will be 230 to 760 Hz when an optional disk is used. *4: VD=12 V Dimensional outline (unit: mm, tolerance unless otherwise noted: ±1) Chopping frequency vs. operating voltage <Chopper> 23.0 45.0 700 Chopping frequency (Hz) 19 Output window 8.0 88 202.3 to 272.3 (adjustable) (Typ.) 800 Input window 4.0 A1447 (Magnet stand) 600 500 When used with optional disk 400 300 200 C4696 100 6-pin receptacle cord length 2 m (for connection to driver circuit) 0 2 4 6 8 10 12 14 Operating voltage (V) KIRDB0376EA <Driver circuit> 38.5 COUNTER 13.5 25 12.5 37 GND +12 V ON-OFF TRIG BNC 18 12.5 17.5 85 30 60 6-pin connector KIRDA0022EA Infrared detectors 24 Amplifiers for infrared detectors C4159/C5185 series, C3757-02 These are low noise amplifiers for InSb, InAs, InAsSb, InGaAs, MCT, PbS and PbSe detectors Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02 Required power supply specifications ⋅ C4159 series: ±15 V ± 0.5 ⋅ C5185 series: ±15 V ± 0.5 ⋅ Current capacity: 1.5 times or more of amplifier's maximum current consumption ⋅ Ripple noise: 5 mVp-p or less ⋅ Analog power supply only Recommended DC power supply (example): E3620A, E3630A (Agilent Technologies) Absolute maximum ratings (Ta=25 ˚C) Parameter Operating temperature Storage temperature Value Unit 0 to +40 °C -20 to +70 °C Amplifiers for photovoltaic detectors (Typ.) Parameter Applicable detector*1 *2 *3 Conversion impedance Frequency response (amp only, -3 dB) C4159-01 C4159-04 Unit TE-cooled type InAs (P10090-11/-21) - Dewar type InAs (P7163) 108, 107, 106 (3 ranges switchable) 2 × 107, 2 × 106, 2 × 105 (3 ranges switchable) 108, 107, 106 (3 ranges switchable) 106, 105, 104 (3 ranges switchable) DC to 100 kHz*4 DC to 45 kHz DC to 15 kHz DC to 100 kHz ±5 0.15 (108, 107 range) 0.65 (106 range) Ω +10 V ±10 0.55 0.15 (108, 107 range) 0.65 (106 range) External power supply*6 V/A 50 ±5 Reverse voltage Current consumption C4159-07 Non-cooled type InAs (P10090-01) TE-cooled type InAsSb (P11120-201, P12691-201) Dewar type MCT Dewar type InSb (P5968-200) Maximum output voltage (1 kΩ load) Equivalent input noise current*5 (f=1 kHz) C4159-06 Dewar type InSb (P5968-060, P5968-100) Dewar type InAsSb (P11120-201) Output impedance Output offset voltage C4159-05 ±5 6 mV 10 pA/Hz1/2 Limited to 0 V operation - ±15 V +30, -10 max. +30, -22 max. mA Amplifiers for InGaAs PIN photodiodes (Typ.) C4159-03 Unit Applicable detector*1 *2 Parameter InGaAs - Conversion impedance 10 7, 10 6 , 10 5 (3 ranges switchable) V/A DC to 15 kHz - Output impedance 50 Ω Maximum output voltage (1 kΩ load) +10 V Output offset voltage ±5 mV 2.5 pA/Hz1/2 Frequency response (amp only, -3 dB) Equivalent input noise current (f=1 kHz) Reverse voltage External power Can be applied from external unit - ±15 V ±15 max. mA supply*5 Current consumption Note: Output noise voltage = Equivalent input noise current × Conversion impedance *1: These amplifiers cannot operate multiple detectors. *2: Consult us before purchasing if you want to use with a detector other than listed here. *3: Consult us before purchasing if you want to use with a multi-element detector. *4: When connected to a detector, frequency response becomes 60 kHz or less depending on the detector photosensitive area. (ϕ0.6 mm: 60 kHz or less, ϕ1 mm: 25 kHz or less) Ringing occurs in the output if the rise time tr (0 to 90%) of incident light is approximately 100 μs or less. The ringing becomes larger as the rise time becomes shorter. No ringing occurs when detecting sine-wave light. (For information on the ringing specifications, refer to the datasheet "Amplifier for infrared detector".) *5: Input resistance: 1 MΩ (C4159-01/-04/-05), 500 Ω (C4159-06/-07) *6: Recommended DC power supply (analog power supply): ±15 V Current capacity: More than 1.5 times the maximum current consumption Ripple noise: 5 mVp-p or less 25 Infrared detectors Accessories for infrared detectors Amplifiers for photoconductive detectors Parameter Applicable detector*8 *9 *10 C5185-02 C5185-03 C3757-02 Unit Dewar type MCT, InSb (P6606 series) MCT (P3981/P2750 series)*11 PbS, PbSe - 5 5 10000 kΩ Input impedance Voltage gain 66 (× 2000) 66 (× 2000) 40 (× 100) dB 5 Hz to 250 kHz 5 Hz to 250 kHz 0.2 Hz to 10 kHz - 5 mA, 10 mA, 15 mA (3 ranges switchable) 0.1 mA, 0.5 mA, 1 mA (3 ranges switchable) Internal bias - Frequency response (amp only, -3 dB) Detector bias current (Typ.)* 7 Output impedance Maximum output voltage (1 kΩ load) Equivalent input noise voltage (f=1 kHz) External power 50 Ω ±10 V 2.6 1.8 +100, -30 max. +100, -30 max. supply*12 40 nV/Hz1/2 +15, -15 max. mA ±15 Current consumption V Note: Output noise voltage = Equivalent input noise voltage × Voltage gain *7: Before purchasing, make sure the bias current to the detector matches the detector bias current specified in the above table. *8: These amplifiers cannot operate multiple detectors. *9: Consult us before purchasing if you want to use with a detector other than listed here. *10: Consult us before purchasing if you want to use with a multi-element detector. *11: Preamp for P3257-25/-30/-101 available upon request *12: Recommended DC power supply (analog power supply): ±15 V Current capacity: More than 1.5 times the maximum current consumption Ripple noise: 5 mVp-p or less Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±1) IN OUT OUT BNC connector Gain adjusting screw Offset voltage adjusting screw 38.5 25 37 PREAMPLIFIER POWER 13.5 IN 4-pin connector 60 HIGH MID LOW 39.5 24.5 25 PREAMPLIFIER POWER 60 37 12.5 11.5 4-pin connector C3757-02 12.5 C4159-01/-03/-04/-05/-06/-07 BNC connector 85 26.2 23 15 23 35 18 12 18 30 85 Solder leads to these terminals. Solder leads to these terminals. Pin connections GND Detector Detector Pin connections GND Cathode Anode Note: Socket for lead attachment is not provided. KIRDA0049EC Note: Socket for lead attachment is not provided. KIRDA0046EC HIGH MID LOW IN 39.5 PREAMPLIFIER POWER 30 60 24.5 4-pin connector 11.5 C5185-02/-03 OUT BNC Bias adjusting screw BNC connector 18 18 30 21.2 85 KIRDA0048EA Infrared detectors 26 Description of terms Dark resistance: Rd Terminal capacitance: Ct This is the resistance of a photoconductive detector (PbS, PbSe, MCT, etc.) in the dark state. An effective capacitor is formed at the PN junction of a photovoltaic detector. Its capacitance is termed the junction capacitance and is one of the parameters that determine the response speed of the photovoltaic detector. And it can cause the phenomenon of gain peaking in I-V conversion circuit using op amp. In HAMAMATSU, the terminal capacitance including this junction capacitance plus package stray capacitance is listed. Dark current: ID The dark current is the small current which flows when a reverse voltage is applied to a photovoltaic detector (InGaAs, InAs, InSb, etc.) under dark conditions. This is a factor for determining the lower limit of light detection. FOV (field of view) The field of view is related to the background radiation noise and greatly influences the value of D*. Offset voltage This is DC output voltage of an amplifier when the input signal is zero. Photosensitivity: S The short circuit current is the output current which flows when the load resistance is 0 and is nearly proportional to the device photosensitive area. This is often called “white light sensitivity” with regards to the spectral response. This value is measured with light from a tungsten lamp of 2856 K distribution temperature (color temperature), providing 100 lx illuminance. This is the detector output per watt of incident light at a given wavelength. The unit is usually expressed in V/W for photoconductive and in A/W for photovoltaic detectors. For photon drag detectors, this is represented as the output voltage with respect to incident pulsed energy of 1 kW radiated from a CO2 laser. Cutoff wavelength: λc Photovoltaic detector (photodiode) Chopping frequency This represents the long wavelength limit of spectral response and in datasheets is listed as the wavelength at which the sensitivity becomes 10% of the value at the peak sensitivity wavelength. This is a semiconductor detector that generates electrical current or voltage when light enters its PN junction. Detector materials include InGaAs, InAs, InAsSb, InSb, and MCT (HgCdTe). In the measurement of infrared detector sensitivity, an optical chopper is often used to perform on-off operation of incident light. This is the frequency of the chopper. Photoconductive detector D* (D-star: Detectivity) This is a semiconductor detector whose conductivity increases with increasing incident light. Detector materials include PbS, PbSe, InSb and MCT (HgCdTe). Peak sensitivity wavelength: λp This is the wavelength at which the sensitivity of the detector is at maximum. Reverse voltage (max.): VR max, supply voltage Applying a reverse voltage to a photovoltaic detector (or applying a voltage to a photoconductive detector) triggers a breakdown at a certain voltage and causes severe deterioration of the detector performance. Therefore the absolute maximum rating for the voltage is specified at the voltage somewhat lower than this breakdown voltage. Do not apply a voltage higher than the maximum rating. Allowable current (max.) This is a maximum value of current which can be used when photoconductive detectors are operated. When the supply current is higher than the maximum allowable current, the detector performance may deteriorate, therefore, excessive current must be avoided. NEP (noise equivalent power) This is the radiant power that produces S/N of 1 at the detector output. At HAMAMATSU we list the NEP measured at the peak sensitivity wavelength (λp). Since the noise level is proportional to the square root of the frequency bandwidth, the NEP is normalized to a bandwidth of 1 Hz. NEP [W/Hz1/2] = Noise current [A/Hz1/2] Photosensitivity [A/W] at λp Cutoff frequency: fc This is the frequency at which the output decreases 3 dB from the steady output level. The cutoff frequency (fc) is related to rise time (tr: time required for the output to rise from 10% to 90% of the maximum output value) as follows: tr [s] = 0.35 fc [Hz] Rise time: tr This is the value of a detector time response to a stepped light input, and defined as the time required for transition from 10% to 90% (or 0 to 63%) of the maximum (constant) output value. The light sources used are GaAs LED (0.92 μm), laser diode (1.3 μm), etc. 27 Short circuit current: Isc Infrared detectors D* is the detectivity indicating the S/N in an AC signal obtained by a detector when radiant energy of 1 W is input to the detector. D* is normalized to a detector area of 1 cm2 and a noise bandwidth of 1 Hz, to allow comparing of characteristics of detector materials independent of the detector area. D* is usually represented as D* (A, B, C), in which A is the light source temperature [K] or wavelength [μm], B is the chopping frequency [Hz], and C is the noise bandwidth [Hz]. D* is expressed in units of cm · Hz1/2/W, and the higher the D*, the better the detector. D* is given by the following equation. D* = S/N · Δf1/2 P · A1/2 where S is the signal, N is the noise, P is the incident energy in [W/cm2], A is the photosensitive area in [cm2] and Δf is the noise bandwidth in [Hz]. The following relation is established by D* and NEP. D* = A1/2 NEP Noise: N The noise is the output voltage from a photoconductive detector operated under specified conditions and 300 K background radiations. Shunt resistance: Rsh This shunt resistance is the voltage-to-current ratio in the vicinity of 0 V in photovoltaic detectors and defined as follows: Where ID is the dark current at reverse voltage=10 mV. 10 [mV] Rsh [Ω] = ID [A] For applications where no reverse voltage is applied, noise resulting from the shunt resistance becomes predominant. Quantum efficiency: QE The quantum efficiency is the number of electrons or holes that can be detected as a photocurrent, divided by the number of incident photons. This is commonly expressed in percent [%]. The quantum efficiency and photosensitivity S have the following relationship at a given wavelength [nm]: QE = S × 1240 × 100 [%] λ Disclaimer Products manufactured by Hamamatsu Photonics K.K. (hereafter “Hamamatsu”) are intended for use in general-use electronic devices (such as measurement equipment, office equipment, information communications equipment, household appliances, etc.). Unless an exception to the following is stated in the documentation of a specific product, Hamamatsu products are not to be used for special applications which demand extremely high reliability or safety (such as equipment for nuclear power control, aerospace equipment, medical equipment and transportation equipment that directly affect human life, or disaster prevention or safety equipment). 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HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, Japan Telephone: (81)53-434-3311, Fax: (81)53-434-5184 www.hamamatsu.com Main Products Si photodiodes APD MPPC Photo IC Image sensors PSD Infrared detectors LED Optical communication devices Automotive devices X-ray flat panel sensors Mini-spectrometers Opto-semiconductor modules Hamamatsu also supplies: Photoelectric tubes Imaging tubes Light sources Imaging and processing systems Sales Offices Japan: HAMAMATSU PHOTONICS K.K. 325-6, Sunayama-cho, Naka-ku, Hamamatsu City, Shizuoka Pref. 430-8587, Japan Telephone: (81)53-452-2141, Fax: (81)53-456-7889 E-mail: [email protected] Belgian Office Axisparc Technology, rue Andre Dumont 7 1435 Mont-Saint-Guibert, Belgium Telephone: (32)10 45 63 34 Fax: (32)10 45 63 67 E-mail: [email protected] China: HAMAMATSU PHOTONICS (CHINA) Co., Ltd. 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Telephone: (1)617-536-9900, Fax: (1)408-261-2522 E-mail: [email protected] North Europe and CIS: HAMAMATSU PHOTONICS NORDEN AB Main Office Torshamnsgatan 35 16440 Kista, Sweden Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01 E-mail: [email protected] United Kingdom: HAMAMATSU PHOTONICS UK Limited Main Office 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, UK Telephone: (44)1707-294888, Fax: (44)1707-325777 E-mail: [email protected] South Africa Office: PO Box 1112, Buccleuch 2066, Johannesburg, South Africa Telephone/Fax: (27)11-802-5505 Information in this catalogue is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Germany, Denmark, The Netherlands, Poland: HAMAMATSU PHOTONICS DEUTSCHLAND GmbH. Main Office Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany Telephone: (49)8152-375-0, Fax: (49)8152-265-8 E-mail: [email protected] France, Portugal, Belgium, Switzerland, Spain: HAMAMATSU PHOTONICS FRANCE S.A.R.L. Main Office 19, Rue du Saule Trapu Parc du Moulin de Massy, 91882 Massy Cedex, France Telephone: (33)1 69 53 71 00 Fax: (33)1 69 53 71 10 E-mail: [email protected] Russian Office 11, Christoprudny Boulevard, Building 1, Office 114, 101000, Moscow, Russia Telephone: (7)495 258 85 18, Fax: (7)495 258 85 19 E-mail: [email protected] Italy: HAMAMATSU PHOTONICS ITALIA S.r.l. Main Office Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy Telephone: (39)02-935-81-733, Fax: (39)02-935-81-741 E-mail: [email protected] Rome Office Viale Cesare Pavese, 435, 00144 Roma, Italy Telephone: (39)06-50513454, Fax: (39)06-50513460 E-mail: [email protected] Swiss Office Dornacherplatz 7 4500 Solothurn, Switzerland Telephone: (41)32-625-60-60, Fax: (41)32-625-60-61 E-mail: [email protected] © 2015 Hamamatsu Photonics K.K. Quality, technology, and service are part of every product. Cat. No. KIRD0001E08 Mar. 2015 DN Printed in Japan (2,500)