Infrared detectors / Selection guide

Selection guide - March 2015
Infrared Detectors
Covering a broad spectral range in the infrared region
INFRARED DETECTORS
HAMAMATSU PHOTONICS K.K.
Infrared detectors
Infrared detectors are widely used in diverse
field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,
physical and chemical science, astronomy and
s p a c e . Ba s e d o n l o n g ex p e r i e n c e i nvo l v i n g
photonic technology, HAMAMATSU provides a
wide variety of infrared detectors in order to
meet a large range of application needs. In addition to the st andard devices listed in this
catalog, custom devices are also available on
request. Please feel free to contact the nearest sales office in your area.
Contents
InGaAs PIN photodiodes
••••••••••••••••
PbS/PbSe photoconductive
detectors
•••••••••••••••••••••••••••••••••••••••••••••••••••••••
1
Infrared detectors
1
9
InAs/InAsSb/InSb
photovoltaic detectors,
InSb photoconductive
detectors
•••••••••••••••••••••••••••••••••••••••••••••••••••••••
11
MCT (HgCdTe)
photoconductive/
photovoltaic detectors
Thermopile detectors
(Si thermal detectors)
••••••••••••••••••••••
•••••••••••••••••••••••••
14
Photon drag detector
••••••••••••••••••••••••••
20
Accessories for
infrared detectors
•••••••••••••••••••••••••••••••••
21
17
Description of terms
Two-color detectors
•••••••••••••••••••••••••••••
•••••••••••••••••••••••••••
27
18
Infrared detectors
2
Infrared detectors
HAMAMATSU infrared detectors
Spectral response range (μm)
Product name
0
1
2
0.5
0.9
0.9
InGaAs PIN photodiodes
1.7
• Short wavelength enhanced type
• Can detect light from 0.5 μm
1.7
• Standard type
• High-speed response, high sensitivity, low dark current
• Available various types of photosensitive areas, arrays and packages
1.9
0.9
InGaAs image sensors
2.1
0.9
2.6
0.9
2.55
0
5
10
15
20
25
Page
1
1, 2
• For optical measurement around 1.7 μm
• Available TE-cooled type
3
• For optical measurement in the band of water content
absorption (1.9 μm)
• Available TE-cooled type
3
• For NIR spectroscopy
• Available TE-cooled type
4
• Types for spectrophotometry and WDM monitor, and
high-speed type available
Spectral response range (μm)
Product name
Features
3
Features
6 to 8
Page
PbS photoconductive detectors
1 3.2
• Photoconductive detectors whose resistance decreases with the
input of infrared light
• Can be used at room temperatures in a wide range of applications
such as radiation thermometers and flame monitors
9, 10
PbSe photoconductive detectors
1
• Detects wavelengths up to 5.2 μm
• Offers higher response speed at room temperatures compared to
other detectors used in the same wavelength range. Suitable for a
wide range of applications such as gas analyzers.
9, 10
InAs photovoltaic detectors
1 3.8
• Covers a spectral response range close to PbS but offers higher
response speed
11
InAsSb photovoltaic detectors
1
• Infrared detectors in the 5 μm or 8 μm spectral band, with high
sensitivity and high reliability
• High-speed response
11
InSb photovoltaic detectors
1
• High-speed and high sensitivity in so-called atmospheric window
(3 to 5 μm)
12
InSb photoconductive detectors
1
• Detects wavelengths up to around 6.5 μm, with high sensitivity
over long periods by thermoelectric cooling
12
MCT (HgCdTe) photoconductive
detectors
1
• Various types with different spectral response range are provided
by changing the HgTe and CdTe composition ratio.
• High sensitivity photoconductive detectors whose resistance
decreases with the input of infrared light
• Available with TE-cooled type and cryogenic dewar
14, 15
MCT (HgCdTe) photovoltaic detectors
1
8.3
5.5
6.7
Si + PbS
0.2 3
Si + PbSe
0.2 4.85
Si + InGaAs
0.32 2.55
InGaAs + InGaAs
0.9 2.55
Photon drag detector
25
13.5
1
Thermopile detectors
Two-color
detectors
5.2
25
10
• High-speed response and low noise
15
• Sensors that generate thermoelectromotive force in proportion to
the energy level of incident infrared light
17
• Wide spectral response range from UV to IR
• Uses two detectors with different spectral response ranges,
mounted one over the other along the same optical axis
18, 19
• High-speed detector with high sensitivity in 10 μm band (for CO 2
laser detection)
• Room temperature operation with high-speed response
20
For detailed information on the products listed in this catalog, see their
datasheets that are available from our website www.hamamatsu.com
Spectral response of HAMAMATSU infrared detectors (typical example)
1014
Photovoltaic detectors
Photoconductive detectors
Si thermal detectors
1013
Short wavelength enhanced type InGaAs (25 °C)
Long wavelength type InGaAs (-196 °C)
D* (cm · Hz1/2/W)
1012
PbS (-20 °C)
InAs (-196 °C)
PbS (25 °C)
1011
MCT (-196 °C)
InSb (-196 °C)
MCT (-196 °C)
MCT (-196 °C)
InAsSb (-196 °C)
1010
Long wavelength type InGaAs (25 °C)
InAsSb for 8 μm Band (-30 ˚C)
109
Si (25 °C)
MCT (-60 °C)
PbSe (25 °C)
Thermopile
PbSe (-20 °C)
InAsSb (-30 °C)
108
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
Wavelength (μm)
KIRDB0259EG
When using infrared detectors, the following points should
be taken into consideration for making a device selection.
Law of black body radiation (Planck's law)
104
As can be seen from the figure above, HAMAMATSU provides a variety
of infrared detectors with different spectral response characteristics. It
should be noted that cooling a detector element may affect its spectral
response. For InGaAs, InAs, InSb and InAsSb detectors, the spectral
response shifts to the shorter wavelength side; in contrast, for PbS,
PbSe and MCT detectors it shifts to the longer wavelength side.
103
Response speed
Various detectors are available with different response speeds. It
should be noted that the response speeds of the PbS and PbSe
detectors become worse with cooling.
Photosensitive area and number of elements
HAMAMATSU photosensors are available in a wide range of
photosensitive area sizes. Also available are multi-element detector
arrays optimized for high-speed multichannel spectrophotometry.
Cooling
Besides easy-to-use photosensors designed for room temperature,
HAMAMATSU provides various types of sensors that are cooled
with thermoelectric coolers, cryogenic dewars (for liquid nitrogen
cooling).
Object temperature
When selecting a detector in accordance with the temperature
of an object, it is necessary to consider the distribution of the
energy (the wavelength dependency of the energy) radiated from
the object. When the temperature of the object is changed, the
distribution of the radiating energy is given by the law of black
body radiation (Planck's law), as shown in the figure at the righthand side. The following relationship is established by the peak
sensitivity wavelength λp (μm) and the absolute temperature T (K).
λp · T=2897.9
Spectral radiance N. (W cm-2 sr-1μm-1)
Spectral response
102
T(K)=6000
5000
4000
101
100
10-1
3000
2000
1500
1000
800
10-2
600
10-3
400
10-4
273
10-5
200
10-6
10-7
10-8
0.1
1
10
100
Wavelength (μm)
KIRDB0014EB
InGaAs PIN photodiodes
Short wavelength enhanced type
(Typ. Ta=25 °C, unless otherwise noted)
Type no.
Cooling
Photosensitive
area
Spectral response
range
λ
Peak sensitivity
wavelength
λp
(mm)
(μm)
(μm)
Cutoff
frequency
fc
V R =1 V
(MHz)
G10899-003K
ϕ0.3
300
G10899-005K
ϕ0.5
150
G10899-01K
Non-cooled
ϕ1
0.5 to 1.7
1.55
Package
Photo
TO-18
C4159-03
(P.25)
45
G10899-02K
ϕ2
10
G10899-03K
ϕ3
5
Option
(sold separately)
TO-5
Standard type
Metal package
Various photosensitive area sizes are available.
Type no.
Cooling
Photosensitive
area
(mm)
G12180-003A
ϕ0.3
G12180-005A
ϕ0.5
G12180-010A
ϕ1
G12180-020A
ϕ2
G12180-030A
ϕ3
G12180-050A
Non-cooled
Peak sensitivity
wavelength
λp
(μm)
Cutoff
frequency
fc
(MHz)
600
(VR=5 V)
200
(VR=5 V)
60
(VR=5 V)
13
(VR=1 V)
7
(VR=1 V)
0.9 to 1.7
Package
3
(VR=1 V)
TO-8
35
(VR=1 V)
TO-18
G8370-82*
ϕ2
TO-5
G8370-83*
ϕ3
4
(VR=1 V)
2
(VR=1 V)
G8370-85*
ϕ5
0.6
(VR=1 V)
TO-8
ϕ1
G12180-120A
G12180-130A
One-stage
TE-cooled
(Td=-10 °C)
ϕ2
0.9 to 1.67
ϕ3
G12180-150A
ϕ5
G12180-210A
ϕ1
G12180-220A
G12180-230A
Two-stage
TE-cooled
(Td=-20 °C)
Non-cooled
* Low PDL (polarization dependent loss) type
Infrared detectors
0.9 to 1.65
ϕ3
ϕ5
G12180-250A
G6854-01
ϕ2
ϕ0.08
0.9 to 1.7
Option
(sold separately)
TO-5
ϕ1
1.55
Photo
TO-18
G8370-81*
G12180-110A
1
ϕ5
(Typ. Ta=25 °C, unless otherwise noted)
Spectral response
range
λ
(μm)
40
(VR=1 V)
13
(VR=1 V)
7
(VR=1 V)
3
(VR=1 V)
40
(VR=1 V)
13
(VR=1 V)
7
(VR=1 V)
3
(VR=1 V)
TO-8
2000
(VR=5 V)
TO-18
with CD lens
C4159-03 (P.25)
C4159-03 (P.25)
A3179 (P.23)
C1103-04 (P.22)
C4159-03 (P.25)
A3179-01 (P.23)
C1103-04 (P.22)
InGaAs PIN photodiodes
Ceramic package
(Typ. Ta=25 °C)
Photosensitive area
Type no.
(mm)
Spectral response
range
λ
(μm)
Peak sensitivity
wavelength
λp
(μm)
Cutoff frequency
fc
V R =5 V
(MHz)
ϕ0.2
G11193-02R
Package
Photo
1000
Surface mount type
ceramic
G11193-03R
ϕ0.3
G8370-10
ϕ10
0.9 to 1.7
1.55
500
0.1
(VR=0 V)
Ceramic
Surface mount type
(Typ. Ta=25 °C)
Photosensitive
area
Type no.
(mm)
Spectral response Peak sensitivity Cutoff frequency
wavelength
fc
range
λ
λp
V R =5 V
(MHz)
(μm)
(μm)
ϕ1
G8941-01
Package
Photo
Type
35
0.9 to 1.7
ϕ0.5
G8941-02
200
Ceramic
(non-sealed)
Frontilluminated
type
Plastic
COB
1.55
G8941-03
0.9 to 1.7
400
0.9 to 1.7
500
ϕ0.3
G11777-003P
Spectral response
G10899 series, etc.
G12180 series
(Typ. Ta=25 ˚C)
G8370-81/-82/-83/-85
0.8
0.6
1.0
G6854-01
G8941 series
Photosensitivity (A/W)
Photosensitivity (A/W)
1.0
Si photodiode
S1337-BQ
0.4
0.2
0
0.19
(Typ.)
1.2
G10899 series
G11777-003P
1.0
0.8
0.6
0.4
Si photodiode S1337-BR
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Wavelength (µm)
0
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9
Wavelength (µm)
KIRDB0444EE
G11193 series
0.8
0.6
G8370-10
0.4
0.2
0.2
0.4
(Typ. Ta=25 °C)
1.2
Td=25 ˚C
Td=-10 ˚C
Td=-20 ˚C
Photosensitivity (A/W)
1.2
G11193 series, G8370-10, etc.
0
0.8
1.0
1.2
1.4
1.6
1.8
Wavelength (µm)
KIRDB0374EB
KIRDB0284EC
Infrared detectors
2
Long wavelength type
Peak sensitivity wavelength: 1.75 μm
These are suitable for optical measurement around 1.7 μm.
Type no.
Cooling
Photosensitive
area
(mm)
Spectral response
range
λ
(μm)
(Typ. Ta=25 °C, unless otherwise noted)
Peak sensitivity
wavelength
λp
(μm)
Cutoff frequency
fc
V R =0 V
(MHz)
G12181-003K
ϕ0.3
90
G12181-005K
ϕ0.5
35
G12181-010K
Non-cooled
ϕ1
0.9 to 1.9
Package
Photo
TO-18
C4159-03
(P.25)
10
G12181-020K
ϕ2
2.5
G12181-030K
ϕ3
1.5
G12181-103K
ϕ0.3
140
ϕ0.5
50
Option
(sold separately)
TO-5
G12181-105K
G12181-110K
One-stage
TE-cooled
(Td=-10 °C)
ϕ1
0.9 to 1.87
1.75
16
G12181-120K
ϕ2
3.5
G12181-130K
ϕ3
1.8
G12181-203K
ϕ0.3
150
ϕ0.5
53
G12181-205K
G12181-210K
Two-stage
TE-cooled
(Td=-20 °C)
ϕ1
0.9 to 1.85
17
G12181-220K
ϕ2
3.7
G12181-230K
ϕ3
1.9
TO-8
C4159-03 (P.25)
A3179 (P.23)
C1103-04 (P.22)
TO-8
C4159-03 (P.25)
A3179-01 (P.23)
C1103-04 (P.22)
Peak sensitivity wavelength: 1.95 μm
These are suitable for optical measurement in the 1.9 μm band such as water absorption.
Type no.
Cooling
Photosensitive
area
(mm)
Spectral response
range
λ
(μm)
Peak sensitivity
wavelength
λp
(μm)
Cutoff frequency
fc
V R =0 V
(MHz)
G12182-003K
ϕ0.3
90
G12182-005K
ϕ0.5
35
G12182-010K
Non-cooled
ϕ1
(Typ. Ta=25 °C, unless otherwise noted)
Package
G12182-020K
ϕ2
2.5
G12182-030K
ϕ3
1.5
G12182-103K
ϕ0.3
140
ϕ0.5
50
Option
(sold separately)
TO-18
C4159-03
(P.25)
10
0.9 to 2.1
Photo
TO-5
G12182-105K
G12182-110K
One-stage
TE-cooled
(Td=-10 °C)
0.9 to 2.07
1.95
16
G12182-120K
ϕ2
3.5
G12182-130K
ϕ3
1.8
G12182-203K
ϕ0.3
150
ϕ0.5
53
G12182-205K
G12182-210K
3
ϕ1
Two-stage
TE-cooled
(Td=-20 °C)
ϕ1
0.9 to 2.05
17
G12182-220K
ϕ2
3.7
G12182-230K
ϕ3
1.9
Infrared detectors
TO-8
C4159-03 (P.25)
A3179 (P.23)
C1103-04 (P.22)
TO-8
C4159-03 (P.25)
A3179-01 (P.23)
C1103-04 (P.22)
InGaAs PIN photodiodes
Peak sensitivity wavelength: 2.3 μm
These are suitable for use in NIR (near infrared) spectroscopy.
Type no.
Cooling
Photosensitive
area
(mm)
Spectral response
range
λ
(μm)
(Typ. Ta=25 °C, unless otherwise noted)
Peak sensitivity
wavelength
λp
(μm)
Cutoff frequency
fc
V R =0 V
(MHz)
G12183-003K
ϕ0.3
50
G12183-005K
ϕ0.5
20
G12183-010K
ϕ1
Non-cooled
0.9 to 2.6
Package
Option
(sold separately)
Photo
TO-18
C4159-03
(P.25)
6
G12183-020K
ϕ2
1.5
G12183-030K
ϕ3
0.8
G12183-103K
ϕ0.3
70
ϕ0.5
25
TO-5
G12183-105K
One-stage
TE-cooled
(Td=-10 °C)
G12183-110K
ϕ1
0.9 to 2.57
7
2.3
G12183-120K
ϕ2
2
G12183-130K
ϕ3
0.9
G12183-203K
ϕ0.3
75
ϕ0.5
28
G12183-205K
Two-stage
TE-cooled
(Td=-20 °C)
G12183-210K
ϕ1
0.9 to 2.55
8
G12183-220K
ϕ2
2.3
G12183-230K
ϕ3
1
TO-8
C4159-03 (P.25)
A3179 (P.23)
C1103-04 (P.22)
TO-8
C4159-03 (P.25)
A3179-01 (P.23)
C1103-04 (P.22)
Spectral response
G12181 series
(Typ. VR=0 V)
Photosensitivity (A/W)
Photosensitivity (A/W)
1.2
0.8
0.6
0.4
0.2
0
0.8
(Typ. VR=0 V)
1.4
Td=25 °C
Td=-10 °C
Td=-20 °C
G12183 series
0.8
0.6
0.4
0.2
1.0
1.2
1.4
1.6
1.8
2.0
KIRDB0483EC
1.0
0.8
0.6
0.4
0.2
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Wavelength (µm)
Wavelength (µm)
Td=25 °C
Td=-10 °C
Td=-20 °C
1.2
1.0
0
0.8
(Typ. VR=0 V)
1.4
Td=25 °C
Td=-10 °C
Td=-20 °C
Photosensitivity (A/W)
1.2
1.0
G12182 series
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
Wavelength (µm)
KIRDB0487EC
KIRDB0491EC
Infrared detectors
4
Infrared detector modules with preamp
These modules consist of the InGaAs PIN photodiode assembled with matched preamplifier, and operate by connecting a DC
power supply.
(Typ.)
Type no.
Detector
G6121
C12485-210
Peak sensitivity
wavelength
λp
(μm)
(μm)
ϕ5
25
1.70
1.55
2.05
1.95
2.56
2.30
1.66
1.55
2.4
2.0
Photosensitive
area
Cooling
G8370-05
Cutoff
wavelength
λc
(mm)
Measurement
condition
Element
temperature
(°C)
Non-cooled
G12182-210K
ϕ1
C12486-210
G12183-210K
C12483-250
G12180-250A
TE-cooled
ϕ5
G12183-010
(chip)
G12183-030
(chip)
G7754-01
G7754-03
-15
ϕ1
Liquid nitrogen
-196
ϕ3
Note: Supplied with a power supply cable
Spectral response
(Typ. Td=25 °C)
1013
C12483-250
G7754-01/-03
D*λ (cm ⋅ Hz1/2/W)
G6121
1012
C12485-210
1011
C12486-210
1010
0.5
1
1.5
2
2.5
3
Wavelength (µm)
KIRDB0369EE
5
Infrared detectors
Photo
InGaAs PIN photodiodes
Image sensors, photodiode arrays
InGaAs linear image sensors for spectrophotometry
One-stage TE-cooled types can be cooled down to -10 °C and cover a spectral range from 0.9 to 1.67 μm.
Type no.
Cooling
Pixel pitch
Number of
pixels
(μm)
G9211-256S
50
256
25
512
50
256
25
512
Photosensitive
area
(mm × mm)
Spectral response
range
λ
(μm)
Defective
pixels
0.9 to 1.67
1% max.
Photo
Applicable driver
circuit
(sold separately)
12.8 × 0.25
G9212-512S
G9213-256S
One-stage
TE-cooled
(Td=-10 °C)
C8061-01
12.8 × 0.5
G9214-512S
Output can be obtained from all pixels since there are no defective pixels. Suitable for precision measurement.
Type no.
Cooling
Pixel pitch
Number of
pixels
(μm)
G9201-256S
G9202-512S
One-stage
TE-cooled
(Td=-10 °C)
G9203-256D
Non-cooled
G9203-256S
One-stage
TE-cooled
(Td=-10 °C)
50
256
25
512
(mm × mm)
Spectral response
range
λ
(μm)
12.8 × 0.25
0.9 to 1.67
Photosensitive
area
Defective
pixels
Photo
Applicable driver
circuit
(sold separately)
C8061-01
0.9 to 1.7
50
256
0.9 to 1.67
C8061-01
0
12.8 × 0.5
G9204-512D
Non-cooled
G9204-512S
One-stage
TE-cooled
(Td=-10 °C)
0.9 to 1.7
25
512
0.9 to 1.67
C8061-01
Two-stage TE-cooled types can be cooled down to -20 °C, which make them suitable for measuring longer wavelengths from 0.9 to
2.55 μm.
Type no.
Cooling
Pixel pitch
Number of
pixels
(μm)
G9205-256W
50
Photosensitive
area
(mm × mm)
Spectral response
range
λ
(μm)
256
Defective
pixels
Photo
Applicable driver
circuit
(sold separately)
5% max.
0.9 to 1.85
G9205-512W
25
512
50
256
4% max.
G9206-256W
G9206-02
G9206-512W
0.9 to 2.05
Two-stage
TE-cooled
(Td=-20 °C)
12.8 × 0.25
25
512
50
256
G9207-256W
C8062-01
0.9 to 2.15
4% max.
0.9 to 2.25
G9208-256W
G9208-512W
5% max.
0.9 to 2.15
5% max.
0.9 to 2.55
25
512
0.9 to 2.55
4% max.
Infrared detectors
6
High-speed type InGaAs linear image sensors
These are high-speed linear image sensors suitable for industrial and measurement equipment.
Type no.
Cooling
Pixel pitch
Number of
pixels
Photosensitive
area
256
12.8 × 0.05
(μm)
G9494-256D
50
(mm × mm)
Non-cooled
G9494-512D
25
512
Spectral response
range
λ
(μm)
Defective
pixels
0.9 to 1.7
1% max.
Applicable driver
circuit
(sold separately)
Photo
C10820
12.8 × 0.025
These are 1024 pixels, high-speed NIR linear image sensors designed for applications such as a foreigh object screening and medical
diagnostic equipment where a multichannel high-speed line rate is required.
Type no.
Cooling
Pixel pitch
Number of
pixels
(μm)
Photosensitive
area
(mm × mm)
G10768-1024D
Spectral response
range
λ
(μm)
Defective
pixels
0.9 to 1.7
1% max.
Applicable driver
circuit
(sold separately)
Photo
25.6 × 0.1
Non-cooled
25
1024
G10768-1024DB
C10854
25.6 × 0.025
Back-illuminated type InGaAs linear image sensor
These linear image sensors use a back-illuminated type InGaAs photodiode array that is bump-connected to a CMOS-ROIC with a
single output terminal.
Type no.
Cooling
Pixel pitch
Number of
pixels
Photosensitive
area
(μm)
(mm × mm)
G11135-256DD
50
256
12.8 × 0.05
G11135-512DE
25
512
12.8 × 0.025
128
6.4 × 0.5
G11620-256DA
256
12.8 × 0.5
G11620-256DF
256
6.4 × 0.5
512
12.8 × 0.5
50
256
12.8 × 0.5
25
512
12.8 × 0.5
Spectral response
range
λ
(μm)
Defective
pixels
Applicable driver
circuit
(sold separately)
Photo
C11514
G11620-128DA
Non-cooled
50
0.95 to 1.7
C11513
1% max.
25
G11620-512DA
G11620-256SA
One-stage
TE-cooled
(Td=-10 °C)
G11620-512SA
0.95 to 1.67
Spectral response
G10768 series
G9201 to G9208 series, etc.
(Typ.)
1.0
Td=25 °C
G9206-256W
Td=-10 °C
Td=-20 °C
G9205-256W
G9201 to G9204/
G9211 to G9214/
G9494 series
(Typ.)
1.2
50 °C
G9207-256W
1.0
G9208-256W
Photosensitivity (A/W)
Photosensitivity (A/W)
1.5
G11135 series
G11620 series
0.5
0.8
0 °C
0.6
25 °C
0.4
0.2
0
0.5
1.0
1.5
2.0
2.5
3.0
KMIRB0068EC
Infrared detectors
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
Wavelength (µm)
Wavelength (µm)
7
0
0.9
KMIRB0042EB
InGaAs PIN photodiodes
InGaAs area image sensors
Here is a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illuminated InGaAs
photodiode array.
Type no.
Pixel pitch
Cooling
Number of
pixels
Photosensitive
area
64 × 64
3.2 × 3.2
(μm)
G11097-0606S
One-stage
TE-cooled
(Td=25 °C)
G11097-0707S
G12242-0707W
50
Applicable driver
circuit
(sold separately)
Photo
C11512
128 × 128
6.4 × 6.4
C11512-01
1% max.
Two-stage
TE-cooled
(Td=15 °C)
G12242-0909W
Defective
pixels
0.95 to 1.7
One-stage
TE-cooled
(Td=0 °C)
G12460-0606S
(mm × mm)
Spectral response
range
λ
(μm)
64 × 64
3.2 × 3.2
1.12 to 1.9
128 × 128
2.56 × 2.56
640 × 512
12.8 × 10.24
C11512
C11512-02
20
0.95 to 1.7
0.37% max.
C12376
InGaAs photodiode arrays
(Typ. Ta=25 °C)
Photosensitive area
Type no.
(mm)
G6849-01
ϕ1
(Quadrant element)
G6849
ϕ2
(Quadrant element)
Spectral response
range
λ
(μm)
Peak sensitivity
wavelength
λp
(μm)
Package
Photo
TO-5
G7150-16
0.45 × 1.0
(16-element)
G7151-16
0.08 × 0.2
(16-element)
G12430-016D
0.45 × 1.0
(16-element)
G12430-032D
0.2 × 1.0
(32-element)
G12430-046D
0.2 × 1.0
(46-element)
G8909-01
ϕ0.08
(40-element)
0.9 to 1.7
1.55
Ceramic
Ceramic
(Non-sealed)
Spectral response
InGaAs area image sensors
G12460-0606S
(Typ. Ta=25 °C)
1.0
1.2
0.4
0.2
0.8
Photosensitivity (A/W)
Photosensitivity (A/W)
Photosensitivity (A/W)
0.6
0.8
0.6
0.4
1.2
1.4
1.6
1.8
Wavelength (µm)
0
0.8
0.6
0.4
0.2
0.2
1.0
(Typ. Ta=25 °C)
1.0
1.0
0.8
0
0.8
InGaAs photodiode arrays
(Typ. Ta=25 °C)
1.0
1.2
1.4
1.6
1.8
2.0
0
0.8
1.0
1.2
1.4
1.6
1.8
Wavelength (µm)
Wavelength (µm)
KIRDB0002EB
KMIRB0051EB
KMIRB0078EA
Infrared detectors
8
PbS/PbSe photoconductive detectors
PbS and PbSe detectors are photoconductive sensors whose resistance decreases with the input of infrared light.
PbS has a spectral response range from 1 to 3.2 μm, while the PbSe has a wider spectral range from 1.5 to 5.2 μm.
PbS photoconductive detectors
PbS photoconductive detectors are infrared sensors having a spectral response range from 1 to 3.2 μm. These sensors can be used at
room temperature in a wide range of applications such as radiation thermometers and flame monitors.
Type no.
Photosensitive
area
Cooling
(mm)
P9217
Cutoff
wavelength
λc
(μm)
Peak sensitivity
wavelength
λp
(μm)
2.9
2.2
Package
(Typ.)
Photo
Option
(sold separately)
1×5
P9217-02
2×2
P9217-03
TO-5
3×3
Non-cooled
P9217-04
C3757-02 (P.26)
4×5
P2532-01
One-stage
TE-cooled
(Td=-10 °C)
P2682-01
Two-stage
TE-cooled
(Td=-20 °C)
TO-8
3.1
2.4
3.2
2.5
4×5
C3757-02 (P.26)
A3179 (P.23)
C1103-04 (P.22)
TO-8
C3757-02 (P.26)
A3179-01 (P.23)
C1103-04 (P.22)
Spectral response
(Typ.)
1012
D* (λ, 600, 1) (cm · Hz1/2/W)
P2682-01
(Td=-20 °C)
P2532-01
(Td=-10 °C)
1011
P9217-04
(Td=25 °C)
1010
109
1
2
3
4
Wavelength (µm)
KIRDB0375EA
PbSe photoconductive detectors
PbSe photoconductive detectors are infrared sensors having a spectral response range from 1.5 to 5.2 μm. These sensors deliver high
sensitivity and high-speed response at room temperatures. Cooled types are also available with a higher S/N making them widely
used in precision photometry such as analytical and measuring instrument.
Type no.
Cooling
Photosensitive
area
(mm)
P9696-02
2×2
P9696-03
3×3
Non-cooled
P3207-08*
P9696-102
P9696-103
P9696-202
P9696-203
2×2
One-stage
TE-cooled
(Td=-10 °C)
2×2
Two-stage
TE-cooled
(Td=-20 °C)
2×2
3×3
3×3
Cutoff
wavelength
λc
(μm)
Peak sensitivity
wavelength
λp
(μm)
4.8
4.0
Infrared detectors
Rise time
max.
(μs)
10
4.35
4.25
5.1
4.1
20
5.2
* Incorporates a band-pass filter, spectral response range: 4.15 to 4.35 μm
9
(Typ.)
4.2
Package
TO-5
TO-8
Photo
Option
(sold separately)
C3757-02
(P.26)
C3757-02 (P.26)
A3179 (P.23)
C1103-04 (P.22)
C3757-02 (P.26)
A3179-01 (P.23)
C1103-04 (P.22)
PbS/PbSe photoconductive detectors
Spectral response
P9696 series
P3207-08
(Typ.)
Td=-20 °C
1010
Td=-10 °C
Td=25 °C
109
108
1
2
3
4
5
6
(Typ.)
1010
D* (λ, 600, 1) (cm · Hz1/2/W)
D* (λ, 600, 1) (cm · Hz1/2/W)
1011
109
108
107
4.0
7
4.1
Wavelength (µm)
4.2
4.3
4.4
4.5
Wavelength (µm)
KIRDB0342EF
KIRDB0540EB
Infrared detector modules with preamp
These modules consist of an infrared detector assembled with a matched preamplifier, and operate by connecting a DC power
supply.
(Typ.)
Type no.
Detector
Measurement
condition
Photosensitive
area
Cooling
(mm)
PbSe
(P9696-03)
P4245
3×3
PbS
(P2682-01)
PbSe
(P9696-203)
P4638
P4639
Element
temperature
(°C)
Non-cooled
25
TE-cooled
-15
4×5
3×3
Cutoff wavelength
λc
Peak sensitivity
wavelength
λp
(μm)
(μm)
4.8
4.0
3.1
2.4
5.0
4.1
Photo
Note: Supplied with a power supply cable
Spectral response
(Typ. Td=25 ˚C)
D* (λ, 600, 1) (cm · Hz1/2/W)
1012
P4638
1011
1010
P4639
109
P4245
108
1
2
3
4
5
6
Wavelength (µm)
KIRDB0370ED
Infrared detectors
10
InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors
InAs photovoltaic detectors are capable of detecting infrared light up to approx. 3.5 μm. InSb photovoltaic detector can sense
infrared light up to approx. 5.5 μm, and InSb photoconductive detectors infrared light up to approx. 6 μm. InAsSb photovoltaic
detectors also delivers high sensitivity in the 5 μm or 8 μm band. InSb photoconductive detectors are available in multi-element
arrays (custom-made product). InAs and InSb photovoltaic detectors cover a spectral response range equivalent to PbS and PbSe
photoconductive detectors, respectively, and feature higher response speed and better S/N.
InAs photovoltaic detectors
InAs photovoltaic detectors are high-speed, low-noise infrared detectors capable of detecting infrared light up to approx. 3.5 μm.
Type no.
Cooling
Photosensitive
area
(mm)
Cutoff
wavelength
λc
(μm)
Peak sensitivity
wavelength
Option
(sold separately)
Photo
(μm)
P10090-01
Non-cooled
3.65
3.35
P10090-11
One-stage
TE-cooled
(Td=-10 °C)
3.55
3.30
P10090-21
Two-stage
TE-cooled
(Td=-30 °C)
TO-5
ϕ1
C4159-07 (P.25)
A3179-01 (P.23)
C1103-04 (P.22)
C4159-06 (P.25)
TO-8
Liquid nitrogen
(Td=-196 °C)
P7163
Package
(Typ.)
3.45
3.25
3.10
3.00
A3179-01 (P.23)
C1103-04 (P.22)
C4159-06 (P.25)
Metal dewar
C4159-05 (P.25)
InAsSb photovoltaic detectors
This InAsSb photovoltaic detectors deliver high sensitivity in the 5 μm or 8 μm band due to our unique crystal growth
technology.
(Typ.)
Type no.
Cooling
Photosensitive
area
(mm)
Liquid nitrogen
(Td=-196 °C)
P11120-901
P11120-201
ϕ1
Two-stage
TE-cooled
(Td=-30 °C)
P12691-201
Non-cooled
P13243-011MA
0.7 × 0.7
Cutoff
wavelength
λc
(μm)
Peak sensitivity
wavelength
5.8
4.8
5.9
4.9
Package
Option
(sold separately)
Photo
(μm)
8.3
6.7
5.3
3.5
Metal dewar
C4159-01 (P.25)
TO-8
C4159-07 (P.25)
TO-46
-
Spectral response
InAsSb photovoltaic detectors
InAs photovoltaic detectors
C-H type CO2, SOX
(Typ.)
1012
CO NOX
(Typ.)
1011
P11120-901
(Td=-196 ˚C)
1011
D* (λ, 1200, 1)(cm · Hz1/2/W)
D* (λ, 1200, 1) (cm · Hz1/2/W)
P7163
(Td=-196 °C)
P10090-21 (Td=-30 °C)
1010
109
P10090-11
(Td=-10 °C)
P10090-01
(Td=25 °C)
108
107
2
3
4
P11120-201
(Td=-30 ˚C)
108
P13243-011MA
(Td=25 ˚C)
2
3
4
5
6
7
8
9
Wavelength (µm)
Wavelength (µm)
Infrared detectors
109
107
1
11
P12691-201
(Td=-30 ˚C)
1010
KIRDB0356ED
KIRDB0430EF
InAs/InAsSb/InSb photovoltaic detectors, InSb photoconductive detectors
InSb photovoltaic detectors
InSb photovoltaic detectors are high-speed, low-noise infrared detectors that deliver high sensitivity in the so-called atmospheric
window between 3 and 5 μm. The infrared light in the 5 μm band can be detected with peak sensitivity and high response speed. A
metal dewar type cooled with liquid nitrogen is also available.
Type no.
Cooling
Cutoff
wavelength
λc
(μm)
Photosensitive
area
(mm)
P5968-060
ϕ0.6
P5968-100
ϕ1
(Typ.)
Peak sensitivity
wavelength
λp
(μm)
Package
Option
(sold separately)
Photo
C4159-01 (P.25)
P5968-200
ϕ2
Liquid nitrogen
(Td=-196 °C)
P5968-300
C4159-04 (P.25)
5.5
5.3
Metal dewar
Custom-made
product
ϕ3
0.25 × 1.4
(16-element)
0.45 × 0.45
(4 × 4-element)
P4247-16
P4247-44
InSb photoconductive detectors
Thermoelectrically cooled InSb photoconductive detectors are capable of detecting infrared light up to around 6 μm with high
sensitivity and high speed.
Type no.
(Typ.)
Cooling
Cutoff
wavelength
λc
(μm)
Photosensitive
area
(mm)
P6606-110
One-stage
TE-cooled
(Td=-10 °C)
P6606-210
Two-stage
TE-cooled
(Td=-30 °C)
Peak sensitivity
wavelength
λp
(μm)
Package
Option
(sold separately)
Photo
A3179-01 (P.23)
C1103-07 (P.22)
C5185-02 (P.26)
6.7
1×1
TO-8
A3179-01 (P.23)
C1103-07 (P.22)
C5185-02 (P.26)
6.5
5.5
P6606-310
1×1
Three-stage
TE-cooled
(Td=-60 °C)
P6606-305
0.5 × 0.5
P6606-320
6.3
A3179-04 (P.23)
C1103-05 (P.22)
C5185-02 (P.26)
TO-3
2×2
Spectral response
InSb photoconductive detectors
InSb photovoltaic detectors
(Typ. Td=-196 °C)
1011
1010
1
2
3
4
5
(Typ.)
1011
D* (λp, 1200, 1) (cm ⋅ Hz1/2/W)
D* (λp, 1200, 1) (cm ⋅ Hz1/2/W)
1012
P6606-310
(Td=-60 °C)
1010
P6606-210
(Td=-30 °C)
109
P6606-110
(Td=-10 °C)
108
107
6
1
2
3
4
5
6
7
Wavelength (µm)
Wavelength (µm)
KIRDB0063EE
KIRDB0166EC
Infrared detectors
12
Infrared detector modules with preamp
These modules consist of the InSb detector assembled with the matched preamplifier, and operate by connecting a DC power
supply.
(Typ.)
Type no.
Detector
Photosensitive
area
Measurement
condition
Cooling
(mm)
InSb
(P6606-310)
P4631-03
P7751-01*1
P7751-02*1
C12492-210
1×1
InSb
(P5968-060)
InSb
(P5968-200)
ϕ0.6
InAs
(P10090-21)
ϕ1
5.5
Liquid nitrogen
-196
5.5
5.3
TE-cooled
-28
3.45
3.25
ϕ2
(Typ.)
D* (λ, 1200, 1) (cm ⋅ Hz1/2/W)
P7751-01/-02
(Td=-196 °C)
1011
C12492-210
(Td=-28 °C)
1010
P4631-03
(Td=-58 °C)
109
108
3
4
5
6
7
Wavelength (µm)
KIRDB0371EF
13
Infrared detectors
(μm)
6.1
Spectral response
2
(μm)
-58
Note: Supplied with a power supply cable
1
Peak sensitivity
wavelength
λp
TE-cooled
*1: FOV=60°
1012
Element
temperature
(°C)
Cutoff
wavelength
λc
Photo
MCT (HgCdTe) photoconductive/photovoltaic detectors
MCT photoconductive detectors decrease their resistance when illuminated by infrared light and are available with various ranges
of spectral response up to 22 μm. MCT photovoltaic detectors generate a photocurrent when illuminated by infrared light.
MCT photoconductive detectors
Metal package
Non-cooled type and one-stage TE-cooled type have sensitivity up to 10 μm, making them suitable for CO2 laser detection. Two or threestage TE-cooled types deliver high sensitivity in detecting short wavelengths.
Type no.
Cooling
Photosensitive
area
(mm)
(Typ.)
Cutoff
wavelength
λc
(μm)
Peak sensitivity
wavelength
λp
(μm)
Package
Photo
Option
(sold separately)
P3257-30
Non-cooled
10.0
6.5
With BNC
connector
Custom-made
product
P3257-101
One-stage
TE-cooled
(Td=0 °C)
10.6
7.0
TO-8
A3179-01 (P.23)
C1103-07 (P.22)
4.3
3.6
TO-8
4.3
3.6
TO- 66
5.4
4.8
TO-8
5.5
4.8
TO-3
P3981
P3981-01
1×1
Two-stage
TE-cooled
(Td=-30 °C)
P2750-08
P2750
P2750-06
Three-stage
TE-cooled
(Td=-60 °C)
A3179-01*2 (P.23)
C1103-07 (P.22)
C5185-03 (P.26)
1×1
A3179-04 (P.23)
C1103-05 (P.22)
C5185-03 (P.26)
0.25 × 0.25
*2: For P3981 and P2750-08. The heatsink for the P3981-01 is a custom product.
Metal dewar type
These include MCT detectors whose peak sensitivity at 10 μm wavelength is suitable for non-contact temperature measurements
at room temperature and MCT detectors whose high sensitivity at longer wavelengths (narrow, medium, and wide wavelength
bands) makes them suitable for FTIR.
Type no.
Cooling
(Typ.)
Photosensitive
area
(mm)
P3257-25
0.025 × 0.025
P3257-01
0.1 × 0.1
P3257-10
1×1
P4249-08
0.5 × 0.5/
8-element
P2748-40
P2748-42
Liquid nitrogen
(Td=-196 °C)
Cutoff
wavelength
λc
(μm)
Peak sensitivity
wavelength
λp
(μm)
Package
Photo
Option
(sold separately)
A3515*3 (P.22)
12
10
Side-on type
metal dewar
1×1
14
12
A3515 (P.22)
C5185-02 (P.26)
0.25 × 0.25
P5274
1×1
17
14
P5274-01
1×1
22
17
P2748-41
1×1
14
12
Head-on type
metal dewar
*3: The amplifier for the P3257-25 is available upon request (custom-made product).
Infrared detectors
14
Spectral response
P3257-30/-101
P3981 series
(Typ.)
108
P2750 series
(Typ.)
12
10
(Typ.)
1011
107
106
P3257-30 (Td=25 °C)
D* (λ, 1200, 1) (cm · Hz1/2/W)
D* (λ, 1200, 1) (cm · Hz1/2/W)
D* (λ, 600, 1) (cm ⋅ Hz1/2/W)
P2750 (Td=-60 °C)
P3257-101 (Td=0 °C)
Td=-30 °C
11
10
10
Td=0 °C
10
10
1
2
3
4
5
6
7
8
9
10
11
12
1
2
9
10
3
4
1
5
2
3
KIRDB0164EG
KIRDB0066EF
P3257-01/-10/-25, P4249-08
4
5
6
Wavelength (µm)
Wavelength (µm)
Wavelength (µm)
KIRDB0068EF
P2748/P5274 series
(Typ. Td=-196 °C)
1011
P2750-08 (Td=-30 °C)
108
9
105
1010
(Typ. Td=-196 °C)
1011
D* (λ, 1200, 1) (cm ⋅ Hz1/2/W)
D* (λ, 1200, 1) (cm ⋅ Hz1/2/W)
P2748-40/-41/-42
1010
109
P5274
1010
109
P5274-01
108
1
2
3
4
6
5
7
8
9
10 11 12 13 14
1
5
10
Wavelength (µm)
15
20
25
Wavelength (µm)
KIRDB0169EB
KIRDB0072EH
MCT photovoltaic detectors
(Typ.)
Type no.
Photosensitive
area
Cooling
(mm)
P9697-01
ϕ1
Spectral response
(Typ. Td=-196 °C)
D* (λ, 1200, 1) (cm ⋅ Hz1/2/W)
1011
1010
109
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
Wavelength (µm)
KIRDB0334EC
15
Infrared detectors
Peak sensitivity
wavelength
λp
(μm)
Package
13
11
Metal dewar
Photo
Option
(sold separately)
ϕ0.5
Liquid nitrogen
(Td=-196 °C)
P9697-02
Cutoff
wavelength
λc
(μm)
C4159-07 (P.25)
MCT (HgCdTe) photoconductive/photovoltaic detectors
Infrared detector modules with preamp
These modules consist of an MCT detector assembled with a matched preamplifier, and operates by connecting a DC power supply.
(Typ.)
Type no.
Measurement
condition
Photosensitive
area
Detector
Cooling
(mm)
C12495-211S
MCT
(P3981)
C12495-311M
MCT
(P2750)
TE-cooled
Cutoff
wavelength
λc
Peak sensitivity
wavelength
λp
(μm)
(μm)
-25
4.3
3.6
-58
5.5
4.8
-3
11.5
6.5
-196
14
12
Element
temperature
(°C)
Photo
1×1
C12495-111L
MCT
(P3257-101)
C12495-411V
MCT
(P2748-40)
Metal dewar
Note: Supplied with a power supply cable
Spectral response
(Typ.)
1012
C12495-311M
(Td=-58 °C)
D* (λ, 1200, 1) (cm ⋅ Hz1/2/W)
1011
1010
C12495-411L
(Td=-196 °C)
109
C12495-211S
(Td=-25 °C)
108
C12495-111L
(Td=-3 °C)
107
106
105
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Wavelength (µm)
KIRDB0372EG
Infrared detectors
16
Thermopile detectors (Si thermal detectors)
Single-element type
Hamamatsu provides high-sensitivity thermopile detectors suitable for gas concentration measurement, etc. Concentration of various
types of gases can be measured by attaching a band-pass filter to thermopile detectors.
The T11262-06 is suitable for flame detection and the T11361-05 for CO2 concentration measurement.
Type no.
Number of
elements
Package
Photosensitive area
(mm)
T11262-01
T11262-06
TO-18
1
Window
Spectral response
(μm)
AR-coated Si
3 to 5
Band-pass filter
4.45
AR-coated Si
3 to 5
Band-pass filter
4.3
Photo
1.2 × 1.2
T11361-01*1
T11361-05*1
*1: Built-in thermistor
Dual-element type
The T11722-01 is a dual-element type thermopile detector designed to detect CO2 concentrations with a high accuracy. It consists
of a high sensitivity dual-element thermopile detector and two band-pass filters for sensing two wavelengths (reference: 3.9 μm,
CO2: 4.3 μm) simultaneously.
Type no.
T11722-01
Package
Number of
elements
Photosensitive area
(mm)
Window
Spectral response
(μm)
TO-5
2
1.2 × 1.2
(per 1 element)
Band-pass filter
Reference: 3.9
CO2: 4.3
Photo
Window options (typical examples of spectral response)
Since thermopile detectors have no wavelength dependence, their spectral response characteristics are determined only by the
transmittance of the window material.
The graph below shows transmittance characteristics of typical window materials. Please contact our sales office about changing
the window of a thermopile detector to the following materials.
100
AR-coated Si
T11262-01
90
5 µm long pass
80
8 to 14 µm band-pass
Transmittance (%)
70
3.9 µm band-pass
T11722-01 (reference)
60
Si
50
4.3 µm band-pass
T11722-01 (CO2)
40
30
4.4 µm band-pass
20
10
0
2.5
5
7.5
10
12.5
15
17.5
20
22.5
25
Wavelength (µm)
KIRDB0512EA
17
Infrared detectors
Two-color detectors
Two-color detectors use a combination of two light sensors with different spectral response, in which one sensor is mounted
over the other sensor along the same optical axis to provide a broad spectral response range. Thermoelectrically cooled two-color
detectors are also provided that cool the sensors to maintain their temperatures constant, allowing high precision measurement
with an improved S/N.
Type no.
(Typ.)
Cooling
Detector
Photosensitive
area
(mm)
K1713-01
K1713-002
K1713-05
Non-cooled
K1713-08
K1713-09
K11908-010K
K3413-01
K3413-002
One-stage
TE-cooled
(Td=-10 °C)
K3413-05
K3413-08
K3413-09
K12728-010K
Non-cooled
K12729-010K
Si
2.4 × 2.4
PbS
1.8 × 1.8
Si
2.4 × 2.4
PbSe
1.8 × 1.8
Si
2.4 × 2.4
InGaAs
ϕ0.5
Si
2.4 × 2.4
InGaAs
ϕ1
Si
2.4 × 2.4
InGaAs
ϕ1
InGaAs
2.4 × 2.4
InGaAs
ϕ1
Si
2.4 × 2.4
PbS
1.8 × 1.8
Si
2.4 × 2.4
PbSe
1.8 × 1.8
Si
2.4 × 2.4
InGaAs
ϕ0.5
Si
2.4 × 2.4
InGaAs
ϕ1
Si
2.4 × 2.4
InGaAs
ϕ1
Si
2.4 × 2.4
InGaAs
ϕ1
InGaAs
2.4 × 2.4
InGaAs
ϕ1
Spectral
response
range
λ
(μm)
Peak
sensitivity
wavelength
λp
(μm)
0.2 to 2.9
0.2 to 4.8
0.32 to 1.7
0.32 to 2.6
0.32 to 1.7
0.9 to 2.55
0.2 to 3.1
0.2 to 5.1
0.32 to 1.67
0.32 to 2.57
0.32 to 1.67
0.32 to 1.65
0.9 to 2.55
Photo
sensitivity
Package
Option
(sold separately)
Photo
S
(A / W)
0.94
0.45
2.2
6 × 104 (V/W)
0.94
0.45
4.0
1.5 × 103 (V/W)
0.94
0.45
1.55
0.55
0.94
0.45
2.3
0.60
0.94
0.45
1.55
0.55
1.55
0.95
2.1
1.0
0.94
0.45
2.4
3 × 105 (V/W)
0.94
0.45
4.1
4.5 × 103 (V/W)
0.94
0.45
1.55
0.55
0.94
0.45
2.3
0.60
0.94
0.45
1.55
0.55
0.96
0.45
1.55
0.55
1.55
0.95
2.1
1.0
C9329
C3757-02
(P.26)
TO-5
C9329
C4159-03
(P.25)
C4159-03
(P.25)
C9329
C3757-02
(P.26)
A3179-03
(P.23)
C1103-04
(P.22)
TO-8
C9329
C4159-03
(P.25)
A3179-03
(P.23)
C1103-04
(P.22)
Ceramic
Spectral response
K1713-01/-002, K3413-01/-002
[ Si photodiode ]
[ PbS photoconductive detector ]
(Typ. Ta=25 °C)
1014
[ PbSe photoconductive detector ]
(Typ. Ta=25 °C)
1011
(Typ. Ta=25 °C)
1010
Td=-10 °C
1013
1012
0.2
0.4
0.6
0.8
1.0
1.2
Td=25 °C
1010
109
1.0
D* (λp, 600, 1) (cm ⋅ Hz1/2/W)
D* (λ, 600, 1) (cm ⋅ Hz1/2/W)
D*λ(cm ⋅ Hz1/2/W)
Td=-10 °C
1.5
2.0
2.5
3.0
3.5
KIRDB0058EE
Td=25 °C
108
107
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
Wavelength (µm)
Wavelength (µm)
Wavelength (µm)
109
KIRDB0282EB
KIRDB0283EC
Infrared detectors
18
K1713-05/-08/-09
[ Si photodiode ]
[ InGaAs PIN photodiode ]
(Typ. Ta=25 °C)
0.7
0.6
Photosensitivity (A/W)
Photosensitivity (A/W)
0.6
0.5
0.4
0.3
0.2
0.5
0.4
K1713-08
0.3
K1713-05/-09
0.2
0.1
0
0.2
(Typ. Ta=25 °C)
0.7
0.1
0.4
0.6
0.8
1.0
0
0.8 1.0
1.2
1.2 1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
Wavelength (µm)
Wavelength (µm)
KIRDB0199EA
KIRDB0211EA
K3413-05/-08/-09
[ InGaAs PIN photodiode ]
[ Si photodiode ]
(Typ. Ta=25 °C)
0.7
0.6
Photosensitivity (A/W)
Photosensitivity (A/W)
0.6
0.5
0.4
0.3
0.2
0.5
0.4
K3413-08
0.3
K3413-05/-09
0.2
0.1
0
0.2
(Typ. Td=-10 °C)
0.7
0.1
0.4
0.6
0.8
1.0
0
0.8 1.0
1.2
1.2 1.4
1.6
1.8
2.0
2.2
2.4
2.6
Wavelength (µm)
Wavelength (µm)
KIRDB0199EA
KIRDB0212EA
K11908-010K, K12729-010K
K12728-010K
(Typ. Ta=25 °C)
1.2
0.6
Photosensitivity (A/W)
Photosensitivity (A/W)
0.8
InGaAs (λc=2.55 µm)
0.6
InGaAs (λc=1.7 µm)
0.2
Wavelength (µm)
InGaAs
0.4
0.3
Si
0.2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Wavelength (µm)
KIRDB0479EB
Infrared detectors
0.5
0.1
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6
19
(Typ. Ta=25 °C)
0.7
1.0
0.4
2.8
KIRDB0598EB
Photon drag detector
The photon drag detector makes use of the “photon drag effect” in which holes created in a semiconductor by incident photons
are dragged along in the direction of the photons, generating an electromotive force. Because of its sensitivity at 10.6 μm, this
detector is suitable for detection of CO2 lasers. The surface of the detector element is coated with a non-reflective material.
Non-cooled type
(Typ.)
Type no.
Photosensitivity
S
λ=10.6 μm
(V/ W)
ϕ5.0
10.6
1.2 × 10-6
Photosensitive area
Cooling
B749
(mm)
Peak sensitivity
wavelength
λp
(μm)
Non-cooled
Magnet stand
(sold separately)
Photo
A1447
Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±1)
B749
Magnet stand A1447
79.5 ± 2
30 ± 1
1/4-20UNC
BNC
connector
KIRDA0016EE
100
1/4-20UNC
160 min. 230 max.
Photosensitive
area
49.5
16.0 ± 0.5
20
5.5
20
KIRDA0017EA
Infrared detectors
20
Accessories for infrared detectors
HAMAMATSU provides following accessories for infrared detectors.
· Temperature controllers (P.22)
· Heatsinks for TE-cooled detector (P.23)
· Chopper (P.24)
· Amplifiers for infrared detectors (P.25)
A connection example is shown below.
Connection example
*1
Power supply (±15 V)
POWER
OUT
*2
Chopper
C4696
TE-cooled
detector*3
Measuring instrument
Amplifier for
infrared detector
C4159/C5185 series
C3757-02
Heatsink for
TE-cooled
detector
A3179 series
Power supply
(100 V, 115 V, 230 V)
˚C
GND
+12 V
POWER
CHOPPER
TRIG
*3
Temperature
controller
C1103 series
Chopper driver circuit
(accessory of C4696)
Power supply (+12 V)
KACCC0321EB
Cable no.
Cable
Length
approx.
Note

Coaxial cable (for signal)
2m
Supplied with heatsink A3179 series.
When using this cable, make it as short as possible (preferably
approx. 10 cm).

4-conductor cable (with a connector)
A4372-05
3m
Supplied with temperature controller C1103 series.
This cable is also sold separately.
‘
Power supply cable (with a 4-conductor
connector)
A4372-02
2m
This cable is supplied with the C4159/C5185 series amplifiers for
infrared detectors, the C3757-02, and infrared detector modules
with preamps (room temperature type).
This cable is also sold separately. Besides this cable, the A4372-03,
which is a power supply cable (with a 6-conductor connector)
supplied with “infrared detector modules with preamps (cooled
type)”, is also sold separately.
’
BNC connector cable E2573
1m
Option
“
Power supply cable
(for temperature controller)
1.9 m
”
Chopper driver cable
(connected to chopper)
•
2-conductor cable or coaxial cable
(for chopper power supply)
2m
2 m or less
Supplied with temperature controller C1103 series
Connected to chopper driver circuit
Prepared by user
*1: Attach the bare wire ends to a 3-pin or 4-pin connector or to a banana jack, and then connect them to the power supply.
*2: Soldering is needed. When using the C5185 series amplifier, a BNC connector (prepared by the user, example: one end of the E2573) is required.
*3: No socket is available. Soldering is needed.
Note: Refer to the datasheet "Accessories for infrared detectors" for detailed information about cables.
21
Infrared detectors
Accessories for infrared detectors
Temperature controllers C1103 series
The C1103 series is a temperature controller designed for TE-cooled infrared detectors. The C1103 series allows temperature setting
for the TE-cooler mounted in an infrared detector.
Specifications
Parameter
C1103-04
C1103-05
One-stage/two-stage TE-cooled type
PbS, PbSe photoconductive detectors, Two-stage/three-stage TE-cooled type
One-stage TE-cooled type
InAs photovoltaic detectors,
MCT, InSb photoconductive detectors MCT, InSb photoconductive detectors
InGaAs, Si photodiodes
Applicable detector*4
Setting element temperature
-30 to +20 °C
-75 to -25 °C
Temperature stability
-30 to +20 °C
Within ±0.1 °C
Temperature control output current
1.1 A min., 1.2 A typ., 1.3 A max.
100 V ± 10% ⋅ 50/60 Hz* 5
Power supply
Power consumption
30 W
Dimensions
107 (W) × 87 (H) × 190 (D) mm
Weight
Approx. 1.9 kg
Operating temperature
+10 to +40 °C
Operating humidity
Storage
C1103-07
90% max.
temperature*6
-20 to +40 °C
Instruction manual
4-conductor cable (with a connector, 3 m) A4372- 05* 7, power supply cable
Accessories
*4: It does not correspond to TE-cooled type infrared detector module with preamp.
*5: Please specify power supply requirement (AC line voltage) from among 100 V, 115 V and 230 V when ordering.
*6: No condensation
*7: When used in combination with the A3179 series heatsink, do not use the 4-conductor cable supplied with the A3179 series, but use the A4372-05 instead.
Block diagram
C1103 series
TE-cooled
detector
Thermistor
Current
circuit
Amp circuit
Comparator
TE-cooled element
Power
supply
AC input
KIRDC0008EB
Valve operator for metal dewar A3515
With this valve operator, metal dewars can be re-evacuated to maintain the desired vacuum level. Refer to the instruction manual
for details. Please be aware that the detector performance is not guaranteed after re-evacuation is performed with the valve
operator.
Vaccum pump
Valve operator
Metal dewar type detector
Dimensional outline (unit: mm)
Pump tube
9.5 ± 0.5
Leak
mount
Gland nut
O-ring
Knob
80.0 ± 1 (closed)
115.0 ± 1 (open)
KIRDA0021EC
Infrared detectors
22
Heatsinks for TE-cooled detectors (TO-8, TO-3 package) A3179 series
These heatsinks are designed for use with thermoelectrically cooled detector sealed in a 6-pin TO-8, TO-3 package. The cooling (heat
dissipation) capacity of the A3179 and A3179-03 is approx. 35 ˚C relative to the ambient temperature 25 ˚C, the A3179-01 is approx.
40 ˚C, and that of the A3179-04 is approx. 85 ˚C. The A3179-03 is designed only for two-color detector K3413 series, the A3179 for
one-stage TE-cooled TO-8, the A3179-01 for two-stage TE-cooled TO-8, the A3179-04 for TO-3 (heatsink for TO-66 is available as a
custom product.).
Instruction manual 4-conductor cable (2 m): for TE-cooler and thermistor*1 *2
Coaxial cable (2 m): for signal*2
Accessories
*1: When used in combination with the C1103 series temperature controller, do not use the 4-conductor cable supplied with the A3179 series, but use the 4-conductor cable
A4372-05 (sold separately, with a connector) that comes with the C1103 series.
*2: No socket is supplied for connection to infrared detectors. Connect infrared detectors by soldering. Cover the soldered joints and detector pins with vinyl insulating tubes.
Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.3)
A3179
(4 ×) 3.5
32
*1
0.4 ± 0.3*2
Photosensitive
surface*3
32
(4 ×) 3.5
3
0.3
60˚
3
32.6
B
46
40
±
26.0 ± 0.2
Detector
metal package
32
32
3
Photosensitive
surface*3
Detector
metal package
46
0.4 ± 0.3*2
26.0 ± 0.2
*1
A3179-01, A3179-03
40
±
0.3
60˚
36
Weight: approx. 50 g
*1: Bottom surface (reference surface) of detector metal package
*2: When the detector is installed
*3: The position of the photosensitive surface differs according
to the detector used.
Refer to the dimensional outline for the detector.
KIRDA0018EE
A3179-01: B=6
A3179-03: B=6.4
Weight: approx. 53 g
*1: Bottom surface (reference surface) of detector metal package
*2: When detector is installed
*3: The position of the photosensitive surface differs according
to the detector used.
Refer to the dimensional outline for the detector.
KIRDA0019EE
3 ± 0.5
A3179-04
(4 ×) 3.5 ± 0.5
56
40 ± 0.3
1
+0
.7
Photosensitive
surface
19
38 ± 0.5
Fixation board
56
6.7 ± 0.5
68 ± 0.3
45
80
Weight: approx. 320 g
KIRDA0149EC
23
Infrared detectors
Accessories for infrared detectors
Chopper C4696
Specifications
Parameter
Specification
Chopping frequency
115 to 380 Hz, 345 Hz typ.*3
Operating voltage VD
DC 5 to 13 V, 12 V typ.
Duty ratio
1:1
Rotational stability
0.06%/°C
Min.
Sync signal VH
(high level)
VD - 0.5 V
Max.
VD - 0.2 V
Operating temperature
0 to 50 °C
Maximum current consumption*4
90 mA
Accessories
Magnet stand A1447 (see P.20), driver circuit
*3: Chopping frequency will be 230 to 760 Hz when an optional disk is used.
*4: VD=12 V
Dimensional outline (unit: mm, tolerance unless otherwise noted: ±1)
Chopping frequency vs. operating voltage
<Chopper>
23.0 45.0
700
Chopping frequency (Hz)
19
Output
window
8.0
88
202.3 to 272.3 (adjustable)
(Typ.)
800
Input window
4.0
A1447
(Magnet stand)
600
500
When used with
optional disk
400
300
200
C4696
100
6-pin receptacle
cord length 2 m
(for connection
to driver circuit)
0
2
4
6
8
10
12
14
Operating voltage (V)
KIRDB0376EA
<Driver circuit>
38.5
COUNTER
13.5
25
12.5
37
GND
+12 V
ON-OFF
TRIG
BNC
18
12.5
17.5
85
30
60
6-pin connector
KIRDA0022EA
Infrared detectors
24
Amplifiers for infrared detectors C4159/C5185 series, C3757-02
These are low noise amplifiers for InSb, InAs, InAsSb, InGaAs, MCT, PbS and PbSe detectors
Accessories
Instruction manual
Power cable (one end with 4-pin connector for
connection to amplifier and the other end unterminated, 2 m) A4372-02
Required power supply specifications
⋅ C4159 series: ±15 V ± 0.5
⋅ C5185 series: ±15 V ± 0.5
⋅ Current capacity: 1.5 times or more of amplifier's maximum current consumption
⋅ Ripple noise: 5 mVp-p or less
⋅ Analog power supply only
Recommended DC power supply (example): E3620A, E3630A
(Agilent Technologies)
Absolute maximum ratings (Ta=25 ˚C)
Parameter
Operating temperature
Storage temperature
Value
Unit
0 to +40
°C
-20 to +70
°C
Amplifiers for photovoltaic detectors (Typ.)
Parameter
Applicable detector*1 *2 *3
Conversion impedance
Frequency response (amp only, -3 dB)
C4159-01
C4159-04
Unit
TE-cooled type
InAs
(P10090-11/-21)
-
Dewar type InAs
(P7163)
108, 107, 106
(3 ranges
switchable)
2 × 107, 2 × 106, 2 ×
105
(3 ranges
switchable)
108, 107, 106
(3 ranges
switchable)
106, 105, 104
(3 ranges switchable)
DC to 100 kHz*4
DC to 45 kHz
DC to 15 kHz
DC to 100 kHz
±5
0.15 (108, 107 range)
0.65 (106 range)
Ω
+10
V
±10
0.55
0.15 (108, 107 range)
0.65 (106 range)
External power supply*6
V/A
50
±5
Reverse voltage
Current consumption
C4159-07
Non-cooled type InAs
(P10090-01)
TE-cooled type InAsSb
(P11120-201, P12691-201)
Dewar type MCT
Dewar type InSb
(P5968-200)
Maximum output voltage (1 kΩ load)
Equivalent input noise current*5
(f=1 kHz)
C4159-06
Dewar type InSb
(P5968-060, P5968-100)
Dewar type InAsSb
(P11120-201)
Output impedance
Output offset voltage
C4159-05
±5
6
mV
10
pA/Hz1/2
Limited to 0 V operation
-
±15
V
+30, -10 max.
+30, -22 max.
mA
Amplifiers for InGaAs PIN photodiodes (Typ.)
C4159-03
Unit
Applicable detector*1 *2
Parameter
InGaAs
-
Conversion impedance
10 7, 10 6 , 10 5
(3 ranges switchable)
V/A
DC to 15 kHz
-
Output impedance
50
Ω
Maximum output voltage (1 kΩ load)
+10
V
Output offset voltage
±5
mV
2.5
pA/Hz1/2
Frequency response (amp only, -3 dB)
Equivalent input noise current (f=1 kHz)
Reverse voltage
External power
Can be applied from external unit
-
±15
V
±15 max.
mA
supply*5
Current consumption
Note: Output noise voltage = Equivalent input noise current × Conversion impedance
*1: These amplifiers cannot operate multiple detectors.
*2: Consult us before purchasing if you want to use with a detector other than listed here.
*3: Consult us before purchasing if you want to use with a multi-element detector.
*4: When connected to a detector, frequency response becomes 60 kHz or less depending on the detector photosensitive area. (ϕ0.6 mm: 60 kHz or less, ϕ1 mm: 25 kHz
or less) Ringing occurs in the output if the rise time tr (0 to 90%) of incident light is approximately 100 μs or less. The ringing becomes larger as the rise time becomes
shorter. No ringing occurs when detecting sine-wave light. (For information on the ringing specifications, refer to the datasheet "Amplifier for infrared detector".)
*5: Input resistance: 1 MΩ (C4159-01/-04/-05), 500 Ω (C4159-06/-07)
*6: Recommended DC power supply (analog power supply): ±15 V
Current capacity: More than 1.5 times the maximum current consumption
Ripple noise: 5 mVp-p or less
25
Infrared detectors
Accessories for infrared detectors
Amplifiers for photoconductive detectors
Parameter
Applicable detector*8 *9 *10
C5185-02
C5185-03
C3757-02
Unit
Dewar type MCT,
InSb (P6606 series)
MCT
(P3981/P2750 series)*11
PbS, PbSe
-
5
5
10000
kΩ
Input impedance
Voltage gain
66 (× 2000)
66 (× 2000)
40 (× 100)
dB
5 Hz to 250 kHz
5 Hz to 250 kHz
0.2 Hz to 10 kHz
-
5 mA, 10 mA, 15 mA
(3 ranges switchable)
0.1 mA, 0.5 mA, 1 mA
(3 ranges switchable)
Internal bias
-
Frequency response (amp only, -3 dB)
Detector bias current
(Typ.)* 7
Output impedance
Maximum output voltage (1 kΩ load)
Equivalent input noise voltage (f=1 kHz)
External power
50
Ω
±10
V
2.6
1.8
+100, -30 max.
+100, -30 max.
supply*12
40
nV/Hz1/2
+15, -15 max.
mA
±15
Current consumption
V
Note: Output noise voltage = Equivalent input noise voltage × Voltage gain
*7: Before purchasing, make sure the bias current to the detector matches the detector bias current specified in the above table.
*8: These amplifiers cannot operate multiple detectors.
*9: Consult us before purchasing if you want to use with a detector other than listed here.
*10: Consult us before purchasing if you want to use with a multi-element detector.
*11: Preamp for P3257-25/-30/-101 available upon request
*12: Recommended DC power supply (analog power supply): ±15 V
Current capacity: More than 1.5 times the maximum current consumption
Ripple noise: 5 mVp-p or less
Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±1)
IN
OUT
OUT
BNC connector
Gain adjusting screw
Offset voltage
adjusting screw
38.5
25
37
PREAMPLIFIER
POWER
13.5
IN
4-pin connector
60
HIGH
MID
LOW
39.5
24.5
25
PREAMPLIFIER
POWER
60
37
12.5
11.5
4-pin connector
C3757-02
12.5
C4159-01/-03/-04/-05/-06/-07
BNC connector
85
26.2
23
15
23
35
18
12
18
30
85
Solder leads to these terminals.
Solder leads to these terminals.
Pin connections
GND
Detector
Detector
Pin connections
GND
Cathode
Anode
Note: Socket for lead attachment is not provided.
KIRDA0049EC
Note: Socket for lead attachment is not provided.
KIRDA0046EC
HIGH
MID
LOW
IN
39.5
PREAMPLIFIER
POWER
30
60
24.5
4-pin connector
11.5
C5185-02/-03
OUT
BNC
Bias adjusting screw
BNC connector
18
18
30
21.2
85
KIRDA0048EA
Infrared detectors
26
Description of terms
Dark resistance: Rd
Terminal capacitance: Ct
This is the resistance of a photoconductive detector (PbS, PbSe,
MCT, etc.) in the dark state.
An effective capacitor is formed at the PN junction of a
photovoltaic detector. Its capacitance is termed the junction
capacitance and is one of the parameters that determine the
response speed of the photovoltaic detector. And it can cause
the phenomenon of gain peaking in I-V conversion circuit using
op amp. In HAMAMATSU, the terminal capacitance including
this junction capacitance plus package stray capacitance is listed.
Dark current: ID
The dark current is the small current which flows when a reverse
voltage is applied to a photovoltaic detector (InGaAs, InAs, InSb,
etc.) under dark conditions. This is a factor for determining the
lower limit of light detection.
FOV (field of view)
The field of view is related to the background radiation noise
and greatly influences the value of D*.
Offset voltage
This is DC output voltage of an amplifier when the input signal is zero.
Photosensitivity: S
The short circuit current is the output current which flows
when the load resistance is 0 and is nearly proportional to the
device photosensitive area. This is often called “white light
sensitivity” with regards to the spectral response. This value is
measured with light from a tungsten lamp of 2856 K distribution
temperature (color temperature), providing 100 lx illuminance.
This is the detector output per watt of incident light at a given
wavelength. The unit is usually expressed in V/W for photoconductive
and in A/W for photovoltaic detectors. For photon drag detectors,
this is represented as the output voltage with respect to incident
pulsed energy of 1 kW radiated from a CO2 laser.
Cutoff wavelength: λc
Photovoltaic detector (photodiode)
Chopping frequency
This represents the long wavelength limit of spectral response
and in datasheets is listed as the wavelength at which the
sensitivity becomes 10% of the value at the peak sensitivity
wavelength.
This is a semiconductor detector that generates electrical
current or voltage when light enters its PN junction. Detector
materials include InGaAs, InAs, InAsSb, InSb, and MCT (HgCdTe).
In the measurement of infrared detector sensitivity, an optical
chopper is often used to perform on-off operation of incident
light. This is the frequency of the chopper.
Photoconductive detector
D* (D-star: Detectivity)
This is a semiconductor detector whose conductivity increases
with increasing incident light. Detector materials include PbS,
PbSe, InSb and MCT (HgCdTe).
Peak sensitivity wavelength: λp
This is the wavelength at which the sensitivity of the detector is
at maximum.
Reverse voltage (max.): VR max, supply voltage
Applying a reverse voltage to a photovoltaic detector (or applying a
voltage to a photoconductive detector) triggers a breakdown at a certain
voltage and causes severe deterioration of the detector performance.
Therefore the absolute maximum rating for the voltage is specified at
the voltage somewhat lower than this breakdown voltage. Do not apply
a voltage higher than the maximum rating.
Allowable current (max.)
This is a maximum value of current which can be used when
photoconductive detectors are operated. When the supply current is
higher than the maximum allowable current, the detector performance
may deteriorate, therefore, excessive current must be avoided.
NEP (noise equivalent power)
This is the radiant power that produces S/N of 1 at the detector
output. At HAMAMATSU we list the NEP measured at the peak
sensitivity wavelength (λp). Since the noise level is proportional
to the square root of the frequency bandwidth, the NEP is
normalized to a bandwidth of 1 Hz.
NEP [W/Hz1/2] =
Noise current [A/Hz1/2]
Photosensitivity [A/W] at λp
Cutoff frequency: fc
This is the frequency at which the output decreases 3 dB from
the steady output level. The cutoff frequency (fc) is related to
rise time (tr: time required for the output to rise from 10% to
90% of the maximum output value) as follows:
tr [s] =
0.35
fc [Hz]
Rise time: tr
This is the value of a detector time response to a stepped light input,
and defined as the time required for transition from 10% to 90% (or
0 to 63%) of the maximum (constant) output value. The light sources
used are GaAs LED (0.92 μm), laser diode (1.3 μm), etc.
27
Short circuit current: Isc
Infrared detectors
D* is the detectivity indicating the S/N in an AC signal obtained
by a detector when radiant energy of 1 W is input to the
detector. D* is normalized to a detector area of 1 cm2 and a
noise bandwidth of 1 Hz, to allow comparing of characteristics
of detector materials independent of the detector area. D* is
usually represented as D* (A, B, C), in which A is the light source
temperature [K] or wavelength [μm], B is the chopping frequency
[Hz], and C is the noise bandwidth [Hz]. D* is expressed in units
of cm · Hz1/2/W, and the higher the D*, the better the detector.
D* is given by the following equation.
D* =
S/N · Δf1/2
P · A1/2
where S is the signal, N is the noise, P is the incident energy
in [W/cm2], A is the photosensitive area in [cm2] and Δf is the
noise bandwidth in [Hz]. The following relation is established by
D* and NEP.
D* =
A1/2
NEP
Noise: N
The noise is the output voltage from a photoconductive detector
operated under specified conditions and 300 K background
radiations.
Shunt resistance: Rsh
This shunt resistance is the voltage-to-current ratio in the
vicinity of 0 V in photovoltaic detectors and defined as follows:
Where ID is the dark current at reverse voltage=10 mV.
10 [mV]
Rsh [Ω] =
ID [A]
For applications where no reverse voltage is applied, noise
resulting from the shunt resistance becomes predominant.
Quantum efficiency: QE
The quantum efficiency is the number of electrons or holes that
can be detected as a photocurrent, divided by the number of
incident photons. This is commonly expressed in percent [%].
The quantum efficiency and photosensitivity S have the following
relationship at a given wavelength [nm]:
QE =
S × 1240
× 100 [%]
λ
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HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1, Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558, Japan
Telephone: (81)53-434-3311, Fax: (81)53-434-5184
www.hamamatsu.com
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Hamamatsu also supplies:
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circuits described herein.
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© 2015 Hamamatsu Photonics K.K.
Quality, technology, and service
are part of every product.
Cat. No. KIRD0001E08
Mar. 2015 DN
Printed in Japan (2,500)