InSb Hall Element HW-302B Please be aware that AKE products are not intended for use in life support equipment, devices, or systems. Use of AKE products in such applications requires the advance written approval of the appropriate AKE officer. Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks, adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of AKE products in such applications is understood to be fully at the risk of the customer using AKE devices or systems. •High-sensitivity InSb Hall element. •Thin SIP package. •Shipped in bulk (500pcs per pack). Note : It is requested to read and accept "IMPORTANT NOTICE". •Absolute Maximum Ratings Item Symbol Limit Unit Max. Input Current Ic 20 mA Operating Temp. Range Topr. –40 to +110 ˚C Storage Temp. Range Tstg. –40 to +125 ˚C Const. Current Drive •Classification of Output Hall Voltage (VH) VH [ mV ] Rank Conditions •Electrical Characteristics(Ta=25˚C) Item Symbol Output Hall Voltage VH Input Resistance Rin Output Resistance Offset Voltage Conditions Min. Max. Unit 122 204 mV B=0mT, Ic=0.1mA 240 550 Rout B=0mT, Ic=0.1mA 240 550 Vos B=0mT, Vc=IV –7 +7 Const. Voltage Drive B=50mT, Vc=IV Typ. A 122 to 150 B 144 to 174 C 168 to 204 B=50mT, Vc=IV Constant Voltage Drive •Input Current Derating Curve mV Input Resistance Temp. Coefficient of Rin VH B=50mT, Ic=5mA –1.8 %/˚C Rin B=0mT, Ic=0.1mA –1.8 %/˚C Dielectric Strength 100V D.C Input Current(mA) 20 Temp. Coefficient of VH M 1.0 Rin : 240 to 550 10 Notes : 1. VH = VHM – Vos (VHM:meter indication) 1 3) – VH (T2) X 100 2. VH = VH (T1) X VH (T (T3 – T2) 1 Rin (T3) – Rin (T2) X 100 3. Rin = Rin (T1) X (T – T ) 3 0 – 40 2 T1 = 20˚C, T2 = 0˚C, T3 = 40˚C 5˚ N 5˚ 0.25 Input Voltage(V) 1.0 1.45 2.35±0.1 0.9 0.5 0.38 8.0±1.0 0.8 3 1.0 10˚ 4 10˚ Pinning 80 100 120 Input Resistance Input 1(±) 3 Output 2(±) 4 Rin : 240 to 550 1.0 0 – 40 – 20 0 20 40 60 80 100 120 Ambient Temperature.(˚C) Note : For constant-voltage drive, stay within this input voltage derating curve envelope. (±) 2 1.0 (±) 1 60 2.0 0.3 1.0 40 •Input Voltage Derating Curve 0.2 0.4 20 Note : Rin of Hall element decreases rapidly as ambient temperature increases. Ensure compliance with input current derating curve envelope, throughout the operating temperature range. 0 0.95 –0.1 0.57 0 Ambient Temperature.(˚C) •Dimensional Drawing (mm) 2.7±0.1 – 20 27 HW-302B a •Characteristic Curves Rin-T VH-B 1400 350.0 Ic const Vc const 300.0 Output Voltage:VH(mV) Input Resistance:Rin( ) 1200 1000 800 600 400 Ic = 5 (mA) Vc = 1 (V) Ta = 25 (˚C) 250.0 Vin 150.0 100.0 50.0 200 0 –50 0 50 100 d 0.0 0 150 10 20 Ambient Temperature(˚C) Ic const Vc const Output Voltage:VH(mV) Output Voltage:VH(mV) Ic = 5 (mA) Vc = 1 (V) B = 50 (mT) 750 Ic 500 Vin 0 –50 0 50 100 B = 50 (mT) Ta = 25 (˚C) 600 400 Vin 200 0 0 150 Ic 5 10 15 20 Ic:(mA) 0.5 1.0 1.5 2.0 Vc:(V) Ic (mA) Input Current Vc (V) Input Voltage Ambient Temperature(˚C) VOS-T 20 Ic const Vc const Ic Ic = 5 (mA) Vc = 1 (V) B = 0 (mT) 10.0 Ic const Vc const 18 Offset Voltage:Vos(mV) 14.0 Offset Voltage:Vos(mV) h VOS-Vc, VOS-Ic 16.0 8.0 6.0 Vin 16 i B = 0 (mT) Ta = 25 (˚C) 14 12 10 Ic 8 6 4 2.0 0.0 –50.0 50 800 Ic const Vc const 4.0 40 VH-Vc, VH-Ic 1000 12.0 30 Magnetic Flux Density B (mT) VH-T 250 Ic 200.0 Vin 2 0.0 50.0 100.0 0 0 150.0 Ambient Temperature(˚C) 5 0.5 10 15 1.0 1.5 Ic (mA) Input Current Vc (V) Input Voltage *Magnetic Flux Density 1(mT)=10(G) In This Example : Rin=350( ), Vos=1.9(mV), Vc=1(V) 28 20 Ic:(mA) 2.0 Vc:(V)