Profile sensor S9132 High-speed frame rate sensor capable of acquiring two-dimensional projection data The profile sensor S9132 is a high-performance CMOS area sensor particularly intended to acquire projection data. A projection profile in the X and Y directions has very small amounts of data compared to normal area sensors and therefore allows high-speed position detection and moving object detection. The S9132 also has advantages over convensional 2D PSDs (Position Sensitive Detectors) that the output linearity is improved, multiple light spots can be detected and external circuits are simplified. A timing generator, bias voltage generator and 10-bit AD converter circuits are all integrated on the same chip, allowing operations with a very simple external driver circuit and external signal processing circuit. Features Applications Sensor for acquiring 2D projection data Light spot position detection (printers, FA inspection equipment, amusement machines) High-speed frame rate: 3200 frames/s max. (8-bit) 1600 frames/s max. (10-bit) Low power consumption Moving object detection (FA inspection equipment, amusement machines) 3D measurement (FA inspection equipment, medical measurement) Digital video output 10-bit/8-bit switchable ADC Y-direction projection data DO (Y) Conceptual view of light spot detection Light spot X-direction projection data DO (X) KMPDC0168EA Structure Parameter Number of pixels Pixel pitch Photosensitive area Package Window material Specification 256 × 256 7.8 1.9968 × 1.9968 Ceramic Borosilicate glass (D263Teco) www.hamamatsu.com Unit μm mm mm 1 Profile sensor S9132 Absolute maximum ratings Parameter Analog supply voltage Digital supply voltage Gain selection terminal voltage AD mode selection voltage Clock pulse voltage Start pulse voltage Operating temperature*1 Storage temperature*1 Reflow soldering condition*2 Symbol Vdd(A) Vdd(D) Vg Vsel V(clk) V(st) Topr Tstg Tsol Condition Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Ta=25 °C Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -5 to +65 -10 to +85 Peak temperature 240 °C, 2 times (See P.9.) Unit V V V V V V °C °C - Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: No condensation *2: JEDEC level 5 Recommended terminal voltage (Ta=25 °C) Parameter Analog supply voltage Digital supply voltage*3 Symbol Vdd(A) Vdd(D) High gain Low gain 10-bit mode AD mode selectionvoltage 8-bit mode High level Clock pulse voltage Low level High level Start pulse voltage Low level Gain selection terminalvoltage Vg Vsel V(clk) V(st) Min. 4.75 3 0 Vdd(A) - 0.25 Vdd(A) - 0.25 0 Vdd(D) - 0.25 0 Vdd(D) - 0.25 0 Typ. 5 5 Vdd(A) Vdd(A) Vdd(D) Vdd(D) - Max. 5.25 Vdd(A) 0.4 Vdd(A) + 0.25 Vdd(A) + 0.25 0.4 Vdd(D) + 0.25 0.4 Vdd(D) + 0.25 0.4 Unit V V V V V V *3: When the latter-stage digital processing circuit is a 3.3 V family, the high level of digital output signal is 3.3 V when operated at Vdd(A)=5 V, Vdd(D)=3.3 V. Electrical characteristics (Ta=25 °C) Parameter Clock pulse frequency*4 10-bit MODE 8-bit MODE Video data rate Digital output voltage Digital output rise time (10 to 90%)*5 Digital output fall time (10 to 90%)*5 Power consumption*6 High level Low level CL=10 pF CL=30 pF CL=10 pF CL=30 pF Symbol f(clk) VR VDO(H) VDO(L) tr tf P Min. 500 500 Vdd(D) - 0.15 - Typ. f(clk)/12 75 Max. 5M 10 M 0.15 30 60 30 60 - Unit Hz Hz V ns ns mW *4: Vdd(A)=Vdd(D)=5 V, V(clk)=V(st)=5 V, Vg=5 V (Low gain) *5: CL: Load capacitance of digital output terminal *6: Vdd(A)=Vdd(D)=5 V, V(clk)=V(st)=V(st)=5 V, f(clk)=5 MHz, f(st)=1.5 kHz 2 Profile sensor S9132 Electrical and optical characteristics [Ta=25 °C, Vdd(A)=Vdd(D)=5 V, V(clk)=V(st)=5 V] Parameter Spectral response range Peak sensitivity wavelength High gain Photosensitivity*7 Low gain Dark current Saturation charge High gain Feedback capacitanceof charge amplifier*8 Low gain High gain Dark output voltage*9 Low gain High gain Saturation output voltage Low gain Photoresponse nonuniformity*10 Symbol λ λp Min. 2.5 2.5 - RES ID Qsat Cf Vd Vsat PRNU Typ. 380 to 1000 650 40 8 0.2 8 0.2 1 100 20 3.5 3 - Max. 0.6 300 60 ±10 Unit nm nm V/nJ pA pC pF mV V % *7: Vg=5 V (Low gain), Vg=0 V (High gain) *8: λ=780 nm *9: Integration time=100 ms *10: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 254 pixels excluding the pixels at both ends, and is defined as follows: PRNU=ΔX/X × 100 (%) X: average output of all pixels, ΔX: difference between X and maximum or minimum output Spectral response (typical example) (Ta=25 °C) 100 Relative sensitivity (%) 80 60 40 20 0 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) KMPDB0231EB A/D converter characteristics (Ta=25 °C) Parameter Digital output format 10-bit mode Resolution*11 8-bit mode Conversion time Frame readout time Conversion voltage range*12 Symbol RESO tCON FR - Value Serial output 10 8 12/f(clk) 3100/f(clk) 0 to 3.8 Unit bit s/ch s/f V *11: Vsel=5 V (10-bit mode), Vsel=0 V (8-bit mode) *12: Digital output is available from MSB as serial output. 10-bit mode: D9 to D0 8-bit mode: D7 to D0 3 Profile sensor S9132 Timing chart tr(clk) tf(clk) clk 1/f(clk) tf(st) tr(st) st tpw(st) DO Trig KMPDC0177EB Parameter Start pulse cycle Clock pulse duty ratio Clock pulse rise and fall times Start pulse width Start pulse rise and fall times Symbol T(st) tr(clk), tf(clk) tpw(st) tr(st), tr(st) Min. 3101/f(clk) 45 0 90 0 Typ. 50 20 20 Max. 55 30 30 Unit s % ns ns ns Note: Operation in the X and Y directions can be performed independently. The internal timing circuit starts operating at the fall timing of the clock pulse immediately after the start pulse goes "Low". It doesn’t matter how many times the clock pulse goes “Low” during the "Low" period of the start pulse. The integration time is determined by the start pulse cycles. However, scince the charge storage of each pixel is carried out between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge integration differs depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is completed. The above timing chart applies to operation at 5 MHz. If operated at 10 MHz, the DO, Trig and EOC timings may delay by half a clock cycle. 4 Profile sensor S9132 8-bit mode ● In the neighborhood of start pixel 012345 clk st D7 - (1 ch) - D0 D7 - (2 ch) - D0 D7 - (3 ch) - D0 27.5 39.5 51.5 DO 34.5 46.5 58.5 Trig 26 37 38 49 50 61 62 EOC 0 EOS ● In the neighborhood of last pixel clk st D7 - (253 ch) - D0 D7 - (254 ch) - D0 D7 - (255 ch) - D0 D7 - (256 ch) - D0 DO 3051.5 3058.5 3063.5 3070.5 3075.5 3082.5 3087.5 3050 3061 3062 3073 3074 3085 3086 3094.5 Trig 3097 EOC 3099 EOS KMPDC0173EA 10-bit mode ● In the neighborhood of start pixel 012345 clk st D9 - (1 ch) - D0 D9 - (2 ch) - D0 D9 - (3 ch) - D0 DO 27.5 36.5 39.5 48.5 51.5 60.5 Trig 26 37 38 49 50 61 62 EOC 0 EOS ● In the neighborhood of last pixel clk st D9 - (253 ch) - D0 D9 - (254 ch) - D0 D9 - (255 ch) - D0 D9 - (256 ch) - D0 DO 3051.5 3060.5 3063.5 3072.5 3075.5 3084.5 3087.5 3096.5 Trig 3050 3061 3062 3073 3074 3085 3086 3097 EOC 3099 EOS KMPDC0174EA 5 Profile sensor S9132 Block diagram Vg(Y) A/D converter X-scanning direction Charge amp Shift register (Y) Active area Y-scanning direction CDS Buffer amp Timing generator Vsel(Y) Trig(Y) clk(Y) st(Y) Vg(X) A/D converter CDS Shift register (X) Timing generator DO(Y) Charge amp DO(X) Buffer amp Vsel(X) Trig(X) clk(X) st(X) EOS(X) EOC(X) Vdd(A) Vdd(D) Vss(A) Vss(D) KMPDC0175EA Connection examples EOS(X) Vg(Y)···0 or 5 V Vg(X)···0 or 5 V EOC(X) Vsel(X)···5 or 0 V 74HC164 Vsel(Y)···5 or 0 V clk DO(X) st : Forward buffer (e.g.) 74HC541 A, B clk clr clk(X) Trig(X) clk(Y) C8225-01 (pulse generator) Digital I/O board Vdd(D) st(Y) 74HC164 DO(Y) : Reverse buffer (e.g.) 74HC540 A, B clk clr Trig(Y) Vdd(D) Vdd(A) Vdd(D) Vss(A) D8 D9 A, B clk clr S9132 st(X) 74HC164 D0 D1 D2 D3 D4 D5 D6 D7 Vss(D) 74HC164 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 A, B clk clr KMPDC0176EC 6 Profile sensor S9132 Dimensional outline (unit: mm) 7.60 ± 0.2 7.20 ± 0.1 Photosensitive area 2.00 1.00 ± 0.15 15 11 16 10 20 6 1 Direction of scan (Y) 5 Photosensitive surface 0.85 ± 0.2*2 1.10 ± 0.2*1 0.55 ± 0.05 1.40 ± 0.14 Direction of scan (X) 1.016 ± 0.08 1.77 1 Index mark 5 1.48 4.06 ± 0.13 20 6 16 10 15 11 0.508 ± 0.08 1.016 *1: Distance from upper surface of window to photosensitive surface *2: Distance from bottom surface of package to photosensitive surface KMPDA0174EC Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol Vsel(X) Vg(X) st(X) clk(X) EOS(X) clk(Y) st(Y) Vdd(A) Vg(Y) Vsel(Y) Vss(A) Vss(D) Trig(Y) DO(Y) Vdd(D) NC DO(X) Trig(X) EOC(X) Vss(A) I/O I I I I O I I I I I I I O O I O O O I Function AD mode selection voltage Gain selection voltage Start pulse Clock pulse End of scan pulse Clock pulse Start pulse Analog supply voltage Gain selection voltage AD mode selection voltage Analog ground Digital ground Trigger pulse Digital output Digital supply voltage No connection Digital output Trigger pulse End of conversion pulse Analog ground 7 Profile sensor S9132 Profile sensor mounted on terminal pitch conversion board S9132-01 S9132-01 is a profile sensor mounted on a terminal pitch conversion board having 1-inch (2.54 mm) pitch output terminals. Dimensional outline (unit: mm) (4 ×) 2.5 30.0 1.7 20.0 2.7 max. 0.85 0.55 45.0 22.86 2.0 (32 ×) 0.8 30.0 7.6 2.54 1.40 2 20 1 19 Photosensitive area Y-direction Photosensitive surface 7.6 20.0 2.0 15.0 1.10 P2.54 × 9 = 22.86 X-direction KMPDA0180EC Pin no. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Symbol Vsel(X) Vg(X) st(X) clk(X) EOS(X) clk(Y) st(Y) Vdd(A) Vg(Y) Vsel(Y) Vss(A) Vss(D) Trig(Y) DO(Y) Vdd(D) NC DO(X) Trig(X) EOC(X) Vss(A) I/O I I I I O I I I I I I I O O I O O O I Function AD mode selection voltage Gain selection voltage Start pulse Clock pulse End of scan pulse Clock pulse Start pulse Analog supply voltage Gain selection voltage AD mode selection voltage Analog ground Digital ground Trigger pulse Digital output Digital supply voltage No connection Digital output Trigger pulse End of conversion pulse Analog ground 8 Profile sensor S9132 Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering by hand To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Reflow soldering Soldering conditions may differ depending on the board size, reflow furnace, etc. Check the conditions before soldering. A sudden temperature rise and cooling may be the cause of trouble, so make sure that the temperature change is within 4 °C per second. The bonding portion between the ceramic base and the glass may discolor after reflow soldering, but this has no adverse effects on the hermetic sealing of the product. (5) UV exposure This product is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light. Recommended temperature profile of reflow soldering (typical example) 300 Peak temperature 240 °C max. Temperature (°C) 250 200 150 100 50 0 0 50 100 150 200 250 300 Time (s) KAPDB0169EA 9 Profile sensor S9132 Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Image sensors/Precautions ∙ Surface mount type products/Precautions Information described in this material is current as of January, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1075E12 Jan. 2014 DN 10