IMAGE SENSOR CMOS linear image sensor S9226 Built-in timing generator and signal processing circuit; single 3.3 V supply operation S9226 is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with excellent input/output characteristics. Features Applications l Pixel pitch: 7.8 µm Pixel height: 125 µm l Number of pixels: 1024 ch l Single 3.3 V power supply operation available l High sensitivity, low dark current, low noise l On-chip charge amplifier with excellent input/output characteristics l Built-in timing generator allows operation with only start and clock pulse inputs l Video data rate: 200 kHz Max. l Spectral response range: 400 to 1000 nm l 8-pin DIP, 16-pin surface mount type also available l Analytical equipment l Position detection l Image reading ■ Absolute maximum ratings Parameter Supply voltage Gain selection terminal voltage Clock pulse voltage Start pulse voltage Operating temperature *1 Storage temperature *1: No condensation Symbol Vdd Vg V (CLK) V (ST) Topr Tstg Value -0.3 to +6 -0.3 to +6 -0.3 to +6 -0.3 to +6 -5 to +60 -10 to +70 Unit V V V V °C °C ■ Shape specifications Parameter Number of pixels Pixel pitch Pixel height Active area length Window material Value 1024 7.8 125 7.9872 TEMPAX Unit µm µm mm - 1 CMOS linear image sensor S9226 ■ Recommended terminal voltage Parameter Supply voltage High gain Gain selection terminal voltage Low gain High Clock pulse voltage Low High Start pulse voltage Low Symbol Vdd Vg V (CLK) V (ST) Min. 3.3 Vdd-0.25 Vdd-0.25 Vdd-0.25 - Typ. 5 0 Vdd Vdd 0 Vdd 0 Max. 5.25 Vdd+0.25 Vdd+0.25 Vdd+0.25 - Unit V V V V V V V Max. 800 30 - Unit kHz kHz mW ■ Electrical characteristics [Ta=25 °C, Vdd=5 V, V (CLK)=V (ST)=5 V] Parameter Clock pulse frequency Video data rate Power consumption Conversion efficiency Symbol f (CLK) VR P Low gain High gain Output impedance *2 CE Zo Min. 10 - Typ. f (CLK)/4 25 1.6 3.2 185 µV/eΩ ■ Electrical and optical characteristics [Ta=25 °C, Vdd=5 V, V (CLK)=V (ST)=5 V] Parameter Symbol Min. Typ. Max. Unit λ Spectral response range 400 to 1000 nm λp Peak sensitivity wavelength 700 nm Dark current ID 3 30 fA High gain 0.6 6 3 Dark output voltage * Vd mV Low gain 0.3 3 4 Saturation output voltage * Vsat 2 3 V High gain 0.6 2 Readout noise Nr mV rms Low gain 0.3 1 Offset output voltage Vo 0.3 0.6 V Photo response non-uniformity *5 *6 PRNU -5 +5 % *2: An increased current consumption at the video terminal rises the sensor chip temperature causing an increased dark current. Connect a buffer amplifier for impedance conversion to the video terminal so that the current flowing to the video terminal is minimized. Use a JFET or CMOS input, high-impedance input op amp as the buffer amplifier. *3: Storage time Ts=100 ms *4: Voltage difference with respect to Vo, Ts=10 ms *5: Uniformity is defined under the condition that the device is uniformly illuminated by light which is 50 % of the saturation exposure level and using 1022 pixels excluding both ends pixels as follows: PRNU= ∆X/X × 100 (%) Where X is the average output of all pixels and ∆X is the difference between X and maximum or minimum output and X. *6: Measured with a tungsten lamp of 2856 K ■ Spectral response (typical example) RELATIVE SENSITIVITY (%) 100 (Typ. Ta=25 ˚C) 80 60 40 20 0 200 300 400 500 600 700 800 900 1000 1100 WAVELENGTH (nm) 2 KMPDB0229EC CMOS linear image sensor S9226 ■ Timing chart T1 CLK thw (ST), INTEGRATION TIME ST Video Trig EOS tr (CLK) tf (CLK) CLK tpw (CLK) tr (ST) tf (ST) ST tvd Video KMPDC0164EA Parameter Symbol Min. Typ. Max. Unit Start pulse high time thw (ST) T1 × 4102 µs Start pulse rise and fall time tr (ST), tf (ST) 0 20 30 ns Clock pulse width tpw (CLK), T1 1.25 100 µs Clock pulse rise and fall time tr (CLK), tf (CLK) 0 20 30 ns Video delay time tvd 10 20 30 ns Note: The CLK pulse should be set from high to low just once when the ST pulse is low. The internal shift register starts operating at this timing. The storage time is determined by the start pulse intervals. However, since the charge storage of each pixel is carried out between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge storage differs depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is completed. ■ Block diagram CLK ST Trig GND Vdd EOS Vg 2 4 3 1 8 7 5 TIMING GENERATOR SHIFT REGISTER CHARGE CLAMP AMP CIRCUIT ADDRESS SWITCH 1 2 3 4 5 6 Video 1023 1024 PHOTODIODE ARRAY KMPDC0165EB 3 CMOS linear image sensor S9226 ■ Pin connections GND 1 8 Vdd CLK 2 7 EOS Trig 3 6 Video ST 4 5 Vg KMPDC0265EA Pin No. 1 2 3 4 5 6 7 8 Symbol GND CLK Trig ST Vg Video EOS Vdd Name of pin Ground Clock pulse Trigger pulse Start pulse Gain selection voltage Video output End of scan Supply voltage I/O I I O I I O O I ■ Dimensional outline (unit: mm) ACTIVE AREA 7.9872 × 0.125 1 ch 5 1 4 7.87 ± 0.25 8 CHIP 1.05 ± 0.15 12.0 ± 0.3 5.0 ± 0.5 0.5 2.54 1.5 ± 0.15 0.5 PIN No. 1 0.25 7.62 7.62 KMPDA0172EA ■ Precautions during use (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Incident window If dust or dirt gets on the light incident window, it will show up as black blemishes on the image. When cleaning, avoid rubbing the window surface with dry cloth or dry cotton swab, since doing so may generate static electricity. Use soft cloth, paper or a cotton swab moistened with alcohol to wipe dust and dirt off the window surface. Then blow compressed air onto the window surface so that no spot or stain remains. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 °C. (4) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KMPD1073E05 4 Feb. 2007 DN