IX2127

IX2127
High-Voltage
Power MOSFET & IGBT Driver
INTEGRATED CIRCUITS DIVISION
Driver Characteristics
Parameter
VOFFSET
IO +/- (Source/Sink)
Description
Rating
Units
600
V
250/500
mA
VCSth
250
mV
tON / tOFF (Typical)
100
ns
The IX2127 is a high-voltage, high-speed power
MOSFET and IGBT driver. High-voltage level-shift
circuitry enables this device to operate up to 600V.
IXYS Integrated Circuits Division’s proprietary
common-mode design techniques provide stable
operation in high dV/dt noise environments.
An on-board comparator can be used to detect an
over-current condition in the driven MOSFET or IGBT
device, and then shut down drive to that device. An
open-drain output, FAULT, indicates that an
over-current shutdown has occurred.
Features
• Floating Channel Designed for Bootstrap Operation
up to 600V
• Tolerant to Negative Transient Voltages; dV/dt
Immune
• Undervoltage Lockout
• 3.3V, 5V, and 12V Input Logic Compatible
• Open-Drain FAULT Indicator Pin Shows
Over-Current Shutdown
• Output in Phase with the Input
The gate driver output typically can source 250mA
and sink 500mA, which is suitable for fluorescent lamp
ballast, motor control, SMPS, and other converter
drive topologies.
The IX2127 is provided in 8-pin DIP and 8-pin SOIC
packages, and is available in Tape & Reel versions.
See ordering information below.
Applications
• High-Speed Gate Driver
• Motor Drive Inverter
Ordering Information
e3
Pb
Part
Description
IX2127G
8-Pin DIP (50/Tube)
IX2127N
8-Pin SOIC (100/Tube)
IX2127NTR
8-Pin SOIC (2000/Reel)
IX2127 Block Diagram
VCC
Low Side
VCC
VB
High Side
Undervoltage Lockout
HO
Buffer
Data Latch
Transmitter
IN
Low-High
Level Shift
Receiver
VS
Enable
Blanking
Signal
Delay
FAULT
Q
Enable
R
Receiver
COM
S
High-Low
Level Shift
Transmitter
+
Data Latch
CS
_
Comparator
DS-IX2127-R03
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INTEGRATED CIRCUITS DIVISION
IX2127
1. Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.1 Package Pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2 Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.3 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.4 Recommended Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5 General Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.6 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.7 Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
3
3
3
4
4
5
6
2. Performance Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3. Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.1 Moisture Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.2 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.3 Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.4 Board Wash . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.5 Mechanical Dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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11
11
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R03
IX2127
INTEGRATED CIRCUITS DIVISION
1 Specifications
1.2 Pin Description
1.1 Package Pinout
VCC
1
8
VB
IN
2
7
HO
FAULT
3
6
CS
COM
4
5
VS
Pin#
Name
Description
1
VCC
2
IN
3
FAULT
Fault Indicator Output
4
COM
Logic Ground
5
VS
High Side Return
6
CS
Comparator Input,
Over-Current Detect
7
HO
High Side Gate Drive Output
8
VB
High Side Supply Voltage
Logic Supply Voltage
Logic Input
1.3 Absolute Maximum Ratings
Unless otherwise specified, ratings are provided at TA=25°C and all bias levels are with respect to COM.
Parameter
Symbol
Minimum
Maximum
Logic Supply Voltage
VCC
-0.3
15
High Side Floating Supply Voltage
VB
-0.3
625
High Side Floating Offset Voltage
VS
VB-12
VB+0.3
Logic Input Voltage
VIN
-0.3
VCC+0.3
High Side Floating Output Voltage
VHO
VS-0.3
VB+0.3
Current Sense Voltage
VCS
VS-0.3
VB+0.3
FAULT Output Voltage
VFLT
-0.3
VCC+0.3
dVS/dt
-
50
-
1
-
0.625
Allowable Offset Supply Voltage Transient
Units
V
V/ns
Package Power Dissipation
8-Lead DIP
PD
8-Lead SOIC
Junction Temperature
TJ
-
150
Storage Temperature
TS
-55
150
W
°C
Absolute maximum electrical ratings are at 25°C
Absolute maximum ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
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IX2127
INTEGRATED CIRCUITS DIVISION
1.4 Recommended Operating Conditions
Parameter
Logic Supply
High Side Floating Supply
High Side Offset Voltage
Logic Input Voltage
Symbol
VCC
VB
VS
VIN
Minimum
Maximum
High Side Floating Output
VHO
0
VS
Current Sense Signal Voltage
VCS
VS
VS+5
FAULT Output Voltage
Ambient Temperature
VFLT
TA
0
VCC
-40
+125
9
12
VS+9
VS+12
-5
600
VCC
Units
V
VB
°C
1.5 General Conditions
Typical values are characteristic of the device at 25°C
and are the result of engineering evaluations. They are
provided for information purposes only and are not
part of the manufacturing testing requirements.
Unless otherwise noted, all electrical specifications
are listed for TA=25°C.
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R03
IX2127
INTEGRATED CIRCUITS DIVISION
1.6 Electrical Characteristics
Unless otherwise specified, the test conditions are: VCC=VBS=12V; VCC, IN, FAULT, and Leakage voltages and
currents are referenced to COM; VB, HO, and CS voltages and currents are referenced to VS .
1.6.1 Power Supply Specifications
Conditions
VIN=0V
Symbol
Minimum
Typical
Maximum
Units
Quiescent VCC Supply Current
Parameter
IQCC
-
280
400
Quiescent VBS Supply Current
VIN=0V
IQBS
A
-
500
1000
VBS UVLO Positive-Going Threshold
-
VBS_UV+
6.8
7.7
8.6
VBS UVLO Negative-Going Threshold
VB=VS=600V
VBS_UV-
6.3
7.2
8.1
ILKG
-
-
2
A
Parameter
High Level Output Voltage, VB-VHO
Conditions
IHO=0A
Symbol
Minimum
Typical
Maximum
Units
VOH
-
-
100
Low Level Output Voltage, VHO
Output Short Circuit Pulsed Current
IHO=0A
mV
VOL
-
-
100
IHO+
-200
-250
-
Offset Supply Leakage Current
V
1.6.2 Gate Drive and Shutdown Specifications
CS Input, Positive-Going Threshold
VHO=0V, VIN=5V, PW<10s,
RGATE=20* (see Figure 1)
VHO=12V, VIN=0V, PW<10s,
RGATE=20* (see Figure 1)
VCC=9V to 12V
IHO-
420
500
-
VCS_TH+
180
260
320
mV
A
mA
VCS=3V
ICS+
-
-
1
VCS=0V
ICS-
-
-
-1
Conditions
Symbol
Minimum
Typical
Maximum
Logic “1” Input Voltage
VCC=9V to 12V
VIH
3.0
-
-
Logic “0” Input Voltage
VCC=9V to 12V
VIL
-
-
0.8
Logic “1” Input Bias Current
VIN=5V
IIN+
-
2.6
15
Logic “0” Input Bias Current
VIN=0V
IIN-
-
-
-1
-
FLT, RON
-
72
-

Conditions
Symbol
Minimum
Typical
Maximum
Units
-
RJA
-
-
125
-
-
200
“High” CS Bias Current
* RGATE value must be 20 or greater.
1.6.3 Logic I/O Specifications
Parameter
FAULT On-Resistance
Units
V
A
1.6.4 Thermal Specifications
Parameter
Thermal Resistance, Junction to Ambient:
8-Lead DIP
8-Lead SOIC
R03
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°C/W
5
IX2127
INTEGRATED CIRCUITS DIVISION
1.7 Timing Characteristics
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Turn-On Propagation Delay
ton
-
100
200
Turn-Off Propagation Delay
toff
-
73
200
tr
-
23
130
tf
-
20
65
tblk
550
766
950
CS Shutdown Propagation Delay
tCS
-
220
360
CS to FLT Propagation Delay
tFLT
-
236
510
Turn-On Rise Time
VCC=VBS=12V,
CL=1nF,
TA=25°C
Turn-Off Fall Time
Start-Up Blanking Delay
Units
ns
Figure 1. Typical Connection Diagram
VCC
1 VCC
IN
2 IN
HO 7
3 FAULT
CS 6
4 COM
VS
FAULT
6
VB
8
RGATE
5
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R03
IX2127
INTEGRATED CIRCUITS DIVISION
1.7.1 I/O Timing Diagram
1.7.4 CS Shutdown Waveforms
IN
VCS_TH+
CS
CS
FAULT
tcs
HO
HO
90%
1.7.2 Switching Time Waveforms
50%
1.7.5 CS to FLT Waveforms
IN
90%
HO
VCS_TH+
10%
CS
ton
tr
toff
tflt
tf
FAULT
90%
1.7.3 Startup Blanking Time Waveforms
50%
IN
tblk
CS
90%
HO
FAULT
R03
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7
IX2127
INTEGRATED CIRCUITS DIVISION
2 Performance Data
500
200
400
150
100
10
Threshold UVLO+ (V)
250
50
300
200
100
0
9.5
10.0
10.5
11.0
VCC Supply Voltage (V)
11.5
12.0
9.0
Quiescent VCC Supply Current IQCC
vs. Temperature
9.5
10.0
10.5
11.0
11.5
VBS Supply Voltage (V)
400
IQBS (μA)
IQCC (μA)
150
300
200
100
50
0
0
100
125
3.0
0
25
50
75
Temperature (ºC)
100
2.0
1.5
1.0
0.0
9.0
12.0
Logic "1" Input Threshold Voltage
vs. Temperature
(VCC=12V)
3.0
10.0
10.5
11.0
VCC Supply Voltage (V)
11.5
1.0
1.0
0.0
0.0
-50
-25
0
25
50
75
Temperature (ºC)
100
125
100
125
200
150
100
9.5
10.0
10.5
11.0
VCC Supply Voltage (V)
11.5
12.0
CS Input Positive Going Threshold
vs. Temperature
(VCC=12V)
300
1.5
0.5
25
50
75
Temperature (ºC)
250
350
2.0
0.5
0
CS Input Positive Going Threshold
vs. VCC
9.0
12.0
Threshold (mV)
Input Voltage (V)
1.5
-25
0
9.5
2.5
2.0
2
50
Logic "0" Input Threshold Voltage
vs. Temperature
(VCC=12V)
3.0
2.5
125
300
1.0
0.0
11.5
100
4
350
1.5
0.5
10.0
10.5
11.0
VCC Supply (V)
25
50
75
Temperature (ºC)
6
-50
Logic "0" Input Threshold Voltage
vs. VCC
2.0
0.5
9.5
0
8
125
Threshold (mV)
Input Voltage (V)
Input Voltage (V)
-25
2.5
2.5
9.0
-25
0
-50
Logic "1" Input Threshold Voltage
vs. VCC
3.0
Input Voltage (V)
-50
10
100
25
50
75
Temperature (ºC)
2
VBS Undervoltage Lockout
Negative-Going Threshold UVLOvs. Temperature
200
0
4
12.0
Threshold UVLO- (V)
500
250
-25
6
Quiescent VBS Supply Current IQBS
vs. Temperature
300
-50
8
0
0
9.0
8
VBS Undervoltage Lockout
Positive-Going Threshold UVLO+
vs. Temperature
Quiescent VBS Supply Current IQBS
vs. Voltage
IQBS (μA)
IQCC (μA)
Quiescent VCC Supply Current IQCC
vs. Voltage
250
200
150
100
50
0
-50
-25
0
25
50
75
Temperature (ºC)
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100
125
-50
-25
0
25
50
75
Temperature (ºC)
100
125
R03
IX2127
INTEGRATED CIRCUITS DIVISION
Logic "1" Input Current IIN+
vs. Voltage
4
3
2
1
0
200
200
175
175
150
150
Rise Time (ns)
Turn-On Delay Time (ns)
Input Current (μA)
5
125
100
75
50
9.5
10.0
10.5
11.0
Voltage (V)
11.5
9.0
175
3.0
2.5
2.0
1.5
1.0
0.5
50
9.0
12.0
200
150
125
100
75
50
0
-50
-25
0
25
50
75
Temperature (ºC)
100
9.5
10.0
10.5
11.0
Supply Voltage (V)
11.5
12.0
Turn-On Rise Time vs. Temperature
(VCC=VBS=12V)
150
100
50
0
125
-50
Logic "0" Input Current IINvs. Voltage
-25
0
25
50
75
Temperature (ºC)
100
125
-50
0.0
-0.5
-1.0
150
125
100
75
50
25
10.0
10.5
11.0
Voltage (V)
11.5
12.0
9.0
0.0
-0.5
-1.0
10.0
10.5
11.0
11.5
VBIAS Supply Voltage (V)
-25
0
25
50
75
Temperature (ºC)
100
125
15
10
5
9.0
50
175
150
125
100
75
50
25
0
-50
125
20
12.0
Turn-Off Fall Time (ns)
Turn-Off Delay Time (ns)
200
0.5
9.5
Turn-Off Time vs. Temperature
(VCC=VBS=12V)
Logic "0" Input Current IINvs. Temperature
1.0
100
0
0
9.5
25
50
75
Temperature (ºC)
25
175
Turn-Off Fall Time (ns)
Turn-Off Delay Time (ns)
0.5
0
Turn-Off Fall Time
vs. Supply Voltage
200
9.0
-25
Turn-Off Time vs. Supply Voltage
1.0
Input Current (μA)
75
25
0.0
Input Current (μA)
10.0
10.5
11.0
11.5
VBIAS Supply Voltage (V)
Rise Time (ns)
Turn-On Time (ns)
Input Current (μA)
200
9.5
Turn-On Time vs. Temperature
(VCC=VBS=12V)
Logic "1" Input Current IIN+
vs. Temperature
3.5
100
0
12.0
4.0
125
25
25
0
9.0
R03
Turn-On Rise Time
vs. Supply Voltage
Turn-On Time vs. Supply Voltage
-50
-25
0
25
50
75
Temperature (ºC)
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100
125
9.5
10.0
10.5
11.0
Supply Voltage (V)
11.5
12.0
Turn-Off Fall Time vs. Temperature
(VCC=VBS=12V)
40
30
20
10
0
-50
-25
0
25
50
75
Temperature (ºC)
100
125
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IX2127
INTEGRATED CIRCUITS DIVISION
-50
-25
0
25
50
75
Temperature (ºC)
100
Output Source Current vs. Voltage
(VCC=VBS=VBIAS, VIN=5V, PW≤10μs)
250
200
150
100
Ref. Fig. 1: RGATE=20Ω
50
0
10.0
125
Output Source Current (mA)
Output Voltage (mV)
11.0
11.5
VBIAS Voltage (V)
350
250
200
150
100
Ref. Fig. 1: RGATE=20Ω
0
-50
-25
0
25
50
75
Temperature (ºC)
100
Start-Up Blanking Delay
vs. Input Voltage
-25
0
25
50
75
Temperature (ºC)
100
10.5
11.0
11.5
VBIAS Voltage (V)
12.0
Output Sink Current
vs. Temperature
(VCC=VBS=12V, VIN=0V, PW≤10μs)
500
400
300
200
Ref. Fig. 1: RGATE=20Ω
100
-50
-25
0
25
50
75
Temperature (ºC)
100
125
CS to FLT Propagation Delay
vs. VCC Supply Voltage
350
300
200
500
400
300
Delay (ns)
250
Delay (nS)
Delay (ns)
Ref. Fig. 1: RGATE=20Ω
100
125
250
600
150
100
200
200
150
100
50
100
0
50
0
0
9.0
9.5
10.0
10.5
11.0
Input Voltage (V)
11.5
12.0
9.0
Start-Up Blanking Delay
vs. Temperature
(VCC=VBS=12V)
800
9.5
10.0
10.5
11.0
Input Voltage (V)
11.5
9.0
12.0
300
350
250
300
500
400
300
150
100
50
-50
-25
0
25
50
75
Temperature (ºC)
100
125
12.0
200
150
50
0
0
11.5
100
200
100
10.0
10.5
11.0
VCC Supply Voltage (V)
250
200
Delay (ns)
Delay (ns)
600
9.5
CS to FLT Propagation Delay
vs. Temperature
(VCC=VBS=12V)
CS Shutdown Propogation Delay
vs. Temperature
700
Delay (ns)
200
CS Shutdown Propagation Delay
vs. Input Voltage
700
10
300
0
-50
125
400
600
300
50
500
0
10.0
12.0
Output Source Current
vs. Temperature
(VCC=VBS=12V, VIN=5V, PW≤10μs)
Low-Level Output Voltage VOL
vs. Temperature
100
90
80
70
60
50
40
30
20
10
0
-10
10.5
Output Sink Current
vs. V Bias Voltage
(VCC=VBS=VBIAS, VIN=0V, PW≤10μs)
600
Output Sink Current (mA)
300
Output Sink Current (mA)
100
90
80
70
60
50
40
30
20
10
0
-10
Output Source Current (mA)
Output Voltage (mV)
High-Level Output Voltage VOH (VB-VHO)
vs. Temperature
0
-50
-25
0
25
50
75
Temperature (ºC)
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100
125
-50
-25
0
25
50
75
Temperature (ºC)
100
125
R03
IX2127
INTEGRATED CIRCUITS DIVISION
3 Manufacturing Information
3.1 Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the
latest version of the joint industry standard, IPC/JEDEC J-STD-020, in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee
proper operation of our devices when handled according to the limitations and information in that standard as well as
to any limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to
the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033.
Device
Moisture Sensitivity Level (MSL) Rating
IX2127G / IX2127N
MSL 1
3.2 ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard
JESD-625.
3.3 Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of
J-STD-020 must be observed.
Device
Maximum Temperature x Time
IX2127G
IX2127N
250°C for 30 seconds
260°C for 30 seconds
3.4 Board Wash
IXYS Integrated Circuits Division recommends the use of no-clean flux formulations. However, board washing to
remove flux residue is acceptable, and the use of a short drying bake may be necessary. Chlorine-based or
Fluorine-based solvents or fluxes should not be used. Cleaning methods that employ ultrasonic energy should not be
used.
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IX2127
INTEGRATED CIRCUITS DIVISION
3.5 Mechanical Dimensions
3.5.1 8-Pin DIP Through-Hole Package
9.652 ± 0.381
(0.380 ± 0.015)
2.540 ± 0.127
(0.100 ± 0.005)
8-0.800 DIA.
(8-0.031 DIA.)
2.540 ± 0.127
(0.100 ± 0.005)
9.144 ± 0.508
(0.360 ± 0.020)
6.350 ± 0.127
(0.250 ± 0.005)
Pin 1
PCB Hole Pattern
7.620 ± 0.254
(0.300 ± 0.010)
6.350 ± 0.127
(0.250 ± 0.005)
3.302 ± 0.051
(0.130 ± 0.002)
0.457 ± 0.076
(0.018 ± 0.003)
7.239 TYP.
(0.285)
4.064 TYP
(0.160)
7.620 ± 0.127
(0.300 ± 0.005)
7.620 ± 0.127
(0.300 ± 0.005)
0.254 ± 0.0127
(0.010 ± 0.0005)
Dimensions
mm
(inches)
0.813 ± 0.102
(0.032 ± 0.004)
3.5.2 8-Pin SOIC Package
1.270 REF
(0.050)
Pin 8
PCB Land Pattern
0.60
(0.024)
0.762 ± 0.254
(0.030 ± 0.010)
3.937 ± 0.254
(0.155 ± 0.010)
5.994 ± 0.254
(0.236 ± 0.010)
5.40
(0.213)
Pin 1
1.55
(0.061)
0.406 ± 0.076
(0.016 ± 0.003)
4.928 ± 0.254
(0.194 ± 0.010)
0.559 ± 0.254
(0.022 ± 0.010)
12
1.346 ± 0.076
(0.053 ± 0.003)
1.27
(0.050)
0.051 MIN - 0.254 MAX
(0.002 MIN - 0.010 MAX)
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Dimensions
mm
(inches)
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IX2127
INTEGRATED CIRCUITS DIVISION
3.5.3 Tape & Reel Packaging for 8-Pin SOIC Package
330.2 DIA.
(13.00 DIA.)
Top Cover
Tape Thickness
0.102 MAX.
(0.004 MAX.)
W=12.00
(0.472)
B0=5.30
(0.209)
K0= 2.10
(0.083)
A0=6.50
(0.256)
P=8.00
(0.315)
User Direction of Feed
Embossed Carrier
Embossment
Dimensions
mm
(inches)
NOTE: Tape dimensions not shown comply with JEDEC Standard EIA-481-2
For additional information please visit our website at: www.ixysic.com
IXYS Integrated Circuits Division makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and
reserves the right to make changes to specifications and product descriptions at any time without notice. Neither circuit patent licenses or indemnity are expressed
or implied. Except as set forth in IXYS Integrated Circuits Division’s Standard Terms and Conditions of Sale, IXYS Integrated Circuits Division assumes no liability
whatsoever, and disclaims any express or implied warranty relating to its products, including, but not limited to, the implied warranty of merchantability, fitness for a
particular purpose, or infringement of any intellectual property right.
The products described in this document are not designed, intended, authorized, or warranted for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or where malfunction of IXYS Integrated Circuits Division’s product may result in direct physical
harm, injury, or death to a person or severe property or environmental damage. IXYS Integrated Circuits Division reserves the right to discontinue or make changes
to its products at any time without notice.
Specification: DS-IX2127-R03
©Copyright 2012, IXYS Integrated Circuits Division
All rights reserved. Printed in USA.
12/19/2012
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