10/24/2005 PRODUCT RELIABILITY REPORT FOR DS18B20, Rev C3 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Don Lipps Staff Reliability Engineer Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected] ph: 972-371-3739 fax: 972-371-6016 Conclusion: The following qualification successfully meets the quality and reliability standards required of all Dallas Semiconductor products: DS18B20, Rev C3 In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing product will continue to meet Maxim's quality and reliability standards. The current status of the reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html. Device Description: A description of this device can be found in the product data sheet. You can find the product data sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm. Reliability Derating: The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that are temperature accelerated. AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts AfT = Acceleration factor due to Temperature tu = Time at use temperature (e.g. 55°C) ts = Time at stress temperature (e.g. 125°C) k = Boltzmann’s Constant (8.617 x 10-5 eV/°K) Tu = Temperature at Use (°K) Ts = Temperature at Stress (°K) Ea = Activation Energy (e.g. 0.7 ev) The activation energy of the failure mechanism is derived from either internal studies or industry accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or their activation energies are unknown. All deratings will be done from the stress ambient temperature to the use ambient temperature. An exponential model will be used to determine the acceleration factor for failure mechanisms, which are voltage accelerated. AfV = exp(B*(Vs - Vu)) AfV = Acceleration factor due to Voltage Vs = Stress Voltage (e.g. 7.0 volts) Vu = Maximum Operating Voltage (e.g. 5.5 volts) B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.) The Constant, B, related to the failure mechanism is derived from either internal studies or industry accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are unknown. All deratings will be done from the stress voltage to the maximum operating voltage. Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the 60% or 90% confidence level (Cf). The failure rate, Fr, is related to the acceleration during life test by: Fr = X/(ts * AfV * AfT * N * 2) X = Chi-Sq statistical upper limit N = Life test sample size Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate is related to MTTF by: MTTF = 1/Fr NOTE: MTTF is frequently used interchangeably with MTBF. The calculated failure rate for this device/process is: FAILURE RATE: MTTF (YRS): 25120 FITS: 4.5 The parameters used to calculate this failure rate are as follows: Cf: 60% Ea: 0.7 B: 0 Tu: 25 °C Vu: 5.5 Volts The reliability data follows. A the start of this data is the device information. The next section is the detailed reliability data for each stress. The reliability data section includes the latest data available and may contain some generic data. "*" after DATE CODE denotes specific product data. Device Information: Process: Passivation: Die Size: Number of Transistors: Interconnect: Gate Oxide Thickness: E6WA-2P2M,HPVt,E2,EPROGVt,TCN1,PF ALOCOS:GOI NRL Laser w/Nov TEOS Oxide-Nitride 78 x 54 9820 Aluminum / 1% Silicon / 0.5% Copper 150 Å ELECTRICAL CHARACTERIZATION DESCRIPTION DATE CODE CONDITION READPOINT QTY FAILS ESD SENSITIVITY 0539 * EOS/ESD S5.1 HBM 500 VOLTS 1 PUL'S 3 0 ESD SENSITIVITY 0539 * EOS/ESD S5.1 HBM 1000 VOLTS 1 PUL'S 3 0 ESD SENSITIVITY 0539 * EOS/ESD S5.1 HBM 2000 VOLTS 1 PUL'S 3 0 ESD SENSITIVITY 0539 * EOS/ESD S5.1 HBM 3000 VOLTS 1 PUL'S 3 0 ESD SENSITIVITY 0539 * EOS/ESD S5.1 HBM 4000 VOLTS 1 PUL'S 3 0 LATCH-UP 0539 * JESD78, I-TEST 125C 2 DYS 6 0 LATCH-UP 0539 * JESD78, Vsupply TEST 125C 2 DYS 6 0 FA# 0 Total: OPERATING LIFE DESCRIPTION DATE CODE CONDITION READPOINT HIGH TEMP OP LIFE 0443 125C, 5.5 VOLTS 1000 HRS 77 0 HIGH TEMP OP LIFE 0450 125C, 5.5 VOLTS 1000 HRS 77 0 HIGH TEMP OP LIFE 0507 125C, 5.5 V (PSA) & 17.0 V (PSB) 1000 HRS 45 0 HIGH TEMP OP LIFE 0539 * 125C, 5.5 VOLTS 192 77 0 HRS Total: QTY FAILS 0 FA# W/E ENDURANCE AND DATA RET'N DESCRIPTION WRITE CYCLE STRESS (KCYS) DATE CODE CONDITION READPOINT 0443 70 C, 5.5 VOLTS 30 150C STORAGE LIFE WRITE CYCLE STRESS (KCYS) 0450 STORAGE LIFE WRITE CYCLE STRESS (KCYS) STORAGE LIFE 0539 * * KCYS 77 0 1000 HRS 77 0 70 C, 5.5 VOLTS 30 77 0 150C 1000 HRS 77 0 55 C, 5.5 VOLTS 30 KCYS 77 0 150C 96 HRS 77 0 KCYS Total: FAILURE RATE: QTY FAILS MTTF (YRS): 25120 FITS: 4.5 0 FA#