08/01/03 RELIABILITY REPORT FOR DS3930, Rev A1 Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292 Email : [email protected] ph: 972-371-3726 fax: 972-371-6016 mbl: 214-435-6610 Conclusion: The following qualification successfully meets the quality and reliability standards required of all Dallas Semiconductor products and processes: DS3930, Rev A1 In addition, Dallas Semiconductor's continuous reliability monitor program ensures that all outgoing product will continue to meet Maxim's quality and reliability standards. The current status of the reliability monitor program can be viewed at http://www.maxim-ic.com/TechSupport /dsreliability.html. Device Description: A description of this device can be found in the product data sheet. You can find the product data sheet at http://dbserv.maxim-ic.com/l_datasheet3.cfm. Reliability Derating: The Arrhenius model will be used to determine the acceleration factor for failure mechanisms that are temperature accelerated. AfT = exp((Ea/k)*(1/Tu - 1/Ts)) = tu/ts AfT = Acceleration factor due to Temperature tu = Time at use temperature (e.g. 55°C) ts = Time at stress temperature (e.g. 125°C) k = Boltzmann’s Constant (8.617 x 10-5 eV/°K) Tu = Temperature at Use (°K) Ts = Temperature at Stress (°K) Ea = Activation Energy (e.g. 0.7 ev) The activation energy of the failure mechanism is derived from either internal studies or industry accepted standards, or activation energy of 0.7ev will be used whenever actual failure mechanisms or their activation energies are unknown. All deratings will be done from the stress ambient temperature to the use ambient temperature. An exponential model will be used to determine the acceleration factor for failure mechanisms, which are voltage accelerated. AfV = exp(B*(Vs - Vu)) AfV = Acceleration factor due to Voltage Vs = Stress Voltage (e.g. 7.0 volts) Vu = Maximum Operating Voltage (e.g. 5.5 volts) B = Constant related to failure mechanism type (e.g. 1.0, 2.4, 2.7, etc.) The Constant, B, related to the failure mechanism is derived from either internal studies or industry accepted standards, or a B of 1.0 will be used whenever actual failure mechanisms or their B are unknown. All deratings will be done from the stress voltage to the maximum operating voltage. Failure rate data from the operating life test is reported using a Chi-Squared statistical model at the 60% or 90% confidence level (Cf). The failure rate, Fr, is related to the acceleration during life test by: Fr = X/(ts * AfV * AfT * N * 2) X = Chi-Sq statistical upper limit N = Life test sample size Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate is related to MTTF by: MTTF = 1/Fr NOTE: MTTF is frequently used interchangeably with MTBF. The calculated failure rate for this device/process is: FAILURE RATE: MTTF (YRS): 24911 FITS: 4.6 The parameters used to calculate this failure rate are as follows: Cf: 60% Ea: 0.7 B: 0 Tu: 25 °C Vu: 5.5 Volts The reliability data follows. A the start of this data is the device information. The next section is the detailed reliability data for each stress. The reliability data section includes the latest data available. Device Information: Process: Passivation: Die Size: Number of Transistors: Interconnect: Gate Oxide Thickness: D6W-2P2M,HPVt,E2,EPROGVt,TCZ ALOCOS:GOI Passivation w/Nov TEOS Oxide-Nitride 135 x 115 8000 Aluminum / 1% Silicon / 0.5% Copper 150 Å ELECTRICAL CHARACTERIZATION DESCRIPTION DATE CODE CONDITION READPOINT QUANTITY ESD SENSITIVITY 0315 EOS/ESD S5.1 HBM 500 VOLTS 1 PUL'S 3 0 ESD SENSITIVITY 0315 EOS/ESD S5.1 HBM 1000 VOLTS 1 PUL'S 3 0 ESD SENSITIVITY 0315 EOS/ESD S5.1 HBM 2000 VOLTS 1 PUL'S 3 0 ESD SENSITIVITY 0315 EOS/ESD S5.1 HBM 4000 VOLTS 1 PUL'S 3 3 ESD SENSITIVITY 0315 EOS/ESD S5.1 HBM 8000 VOLTS 1 PUL'S 3 3 LATCH-UP 0315 JESD78, I-TEST 125C 6 0 LATCH-UP 0315 JESD78, Vsupply TEST 125C 6 0 Total: FAILS 6 OPERATING LIFE DESCRIPTION DATE CODE CONDITION READPOINT QUANTITY HIGH VOLTAGE LIFE 0251 125C, 6.0 VOLTS 1000 HRS 45 0 HIGH VOLTAGE LIFE 0305 125C, 6.0 VOLTS 1000 HRS 45 0 HIGH TEMP OP LIFE 0314 125C, 5.5 VOLTS 1000 HRS 77 0 HIGH TEMP OP LIFE 0315 125C, 5.5 VOLTS 1000 HRS 45 0 Total: FAILS 0 STORAGE LIFE DESCRIPTION DATE CODE CONDITION READPOINT QUANTITY STORAGE LIFE 0305 150C 1000 HRS 77 0 STORAGE LIFE 0320 150C 192 77 0 HRS FAILS Total: 0 W/E ENDURANCE AND DATA RET'N DESCRIPTION DATE CODE CONDITION READPOINT QUANTITY WRITE CYCLE STRESS 0251 70 C, 6.0 VOLTS 30 150C 1000 HRS STORAGE LIFE WRITE CYCLE STRESS 0314 STORAGE LIFE WRITE CYCLE STRESS 0315 STORAGE LIFE KCYS FAILS 77 0 77 0 70 C, 5.5 VOLTS 30 KCYS 77 0 150C 96 HRS 77 0 70 C, 5.5 VOLTS 30 KCYS 77 0 150C 96 HRS 77 0 WRITE CYCLE STRESS 0325 85 C, 5.5 VOLTS 30 KCYS 77 0 WRITE CYCLE STRESS 0327 70 C, 5.5 VOLTS 30 KCYS 77 0 Total: FAILURE RATE: MTTF (YRS): 24911 FITS: 4.6 0