3DK2222A SOT-23 Transistor(NPN) SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value Units 75 40 6 600 225 150 -55to+150 V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC= 10μA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO MIN TYP MAX UNIT 75 V IC= 10mA, IB=0 40 V IE=10μA, IC=0 6 V IE=0 Collector cut-off current ICBO VCB=70 V , IE=0 0.01 μA Collector cut-off current ICEX VCE=60V, VBE(off)=3V 0.01 μA Emitter cut-off current IEBO VEB= 3V, IC=0 0.01 μA HFE(1) VCE=10V, IC= 150mA 100 HFE(2) VCE=10V, IC= 0.1mA 40 HFE(3) VCE=10V, IC= 500mA 42 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB=15mA Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA Transition frequency VCE=20V, IC= 20mA fT f=100MHz Delay time td Rise time tr Storage time tS Fall time tf 300 0.6 0.3 1.2 300 V V MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA 10 nS 25 nS VCC=30V, IC=150mA IB1=-IB2=15mA 225 nS 60 nS 3DK2222A SOT-23 Transistor(NPN) Typical characteristics 3DK2222A SOT-23 Transistor(NPN)