JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors FMMDT5451 TRANSISTOR DESCRIPTION PNP and NPN Epitaxial Silicon Transistor WBFBP-06C (2×2×0.5) unit: mm FEATURES Complementary Pair z One 5551-Type NPN, One 5401-Type PNP z Ultra-Small Surface Mount Package z 1 APPLICATION Ideal for Medium Power Amplification and Switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: KNM KNM E1,B1,C1=NPN 5551 Section E2,B2,C2=PNP 5401 Section 5551 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Dissipation 0.15 W RθJA Thermal Resistance, Junction to Ambient 625 K/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature range -55-150 ℃ 5401 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector- Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Dissipation 0.15 W RθJA Thermal Resistance, Junction to Ambient 625 K/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature range -55-150 ℃ 5551 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol Test unless otherwise conditions MIN specified） TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA,IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE= 10µA, IC=0 6 V Collector cut-off current ICBO VCB= 120V Emitter cut-off current IEBO VEB= 4V, IC=0 DC current gain hFE（1） VCE= 5 V, IC= 1 mA 80 hFE（2） VCE= 5 V, IC = 10 mA 80 hFE（3） VCE= 5 V, IC= 50 mA 30 Collector-emitter saturation voltage VCEsat Base-emitter saturation voltage VBEsat Transition frequency fT Collector output capacitance Cob Noise figure NF Symbol 50 nA 50 nA 250 IC= 10 mA, IB= 1 mA 0.15 IC= 50 mA, IB= 5 mA 0.2 IC= 10 mA, IB= 1 mA 1 IC= 50 mA, IB= 5 mA 1 VCE=10V,IC=10mA,,f=100MHz 100 VCB=10V,IE=0,f=1MHz VCE=5V,Ic=0.2mA, f=1KHZ,Rg=1kΩ 5401 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter IE=0 Test unless otherwise conditions V V 300 MHz 6 pF 8 dB MAX UNIT specified) MIN TYP Collector-base breakdown voltage V(BR)CBO IC=-100µA , IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC= -1mA , -150 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, -5 V IB=0 IC=0 Collector cut-off current ICBO VCB=-120 V , IE=0 -0.05 µA Emitter cut-off current IEBO VEB=-3V , -0.05 µA hFE(1) VCE=-5 V, IC= -1mA 50 hFE(2) VCE=-5 V, IC= -10mA 60 hFE(3) VCE=-5 V, IC= -50mA 50 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage IC=0 240 VCE(sat)1 IC=-10 mA, IB=-1mA -0.2 V VCE(sat)2 IC=-50 mA, IB=-5mA -0.5 V VBE(sat)1 IC= -10 mA, IB=-1mA -1 V VBE(sat)2 IC= -50 mA, IB=-5mA -1 V 300 MHz 6 pF VCE= -10V, IC= -10mA Transition frequency fT Output Capacitance Cob VCB=-10V, IE= 0,f=1MHz Noise Figure NF VCE= -5.0V, IC= -200µA, f = 100MHz RS= 10Ω,f = 1.0kHz 100 8.0 dB Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.590 REF. 0.590 REF. 0.650 TYP. 0.400 REF. 0.300 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.023 REF. 0.023 REF. 0.026 TYP. 0.016 REF. 0.012 REF. 0.020 REF. APPLICATION CIRTCUITS