MMST2222A SOT-323 Transistor (NPN) SOT-323 1. BASE 2. EMITTER 3. COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMST2907A) MARKING: K3P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO IC PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Tstg Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) hFE(6) Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency fT Output Capacitance Delay time Rise time Storage time Fall time Cob td tr tS tf unless Test Value Units 75 40 6 600 200 150 V V V mA mW -55to+150 ℃ ℃ otherwise specified) conditions IC= 10μA, IE=0 IC= 10mA, IB=0 IE=10μA, IC=0 VCB=70 V, IE=0 VCE=35V , IB=0 VEB= 3V , IC=0 VCE=10V, IC=0.1mA VCE=10V, IC= 1mA VCE=10V, IC= 10mA VCE=10V, IC= 150mA VCE=10V, IC= 500mA VCE=1V, IC= 150mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA IC=500 mA, IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA f=100MHz VCB=10V, IE= 0,f=1MHz VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA VCC=30V, IC=150mA IB1=-IB2=15mA MIN TYP MAX UNIT 100 100 100 V V V nA nA nA 75 40 6 35 50 75 100 40 35 300 1 0.3 2.0 1.2 300 V V MHz 8 10 25 225 60 pF nS nS nS nS MMST2222A SOT-323 Transistor (NPN) Typical characteristics MMST2222A SOT-323 Transistor (NPN)