1N914/1N914A/1N914B

1N914/1N914A/1N914B
Small Signal Switching Diodes
REVERSE VOLTAGE: 75 V
CURRENT: 75 mA
DO - 35
Features
◇
Glass sealed envelope. (MSD)
◇
VRM=100V guaranteed
◇
High reliability
Mechanical Data
◇
Case: DO-35, glass case
◇
Polarity: Color band denotes cathode
◇
Weight: 0.004 ounces, 0.13 grams
Dimensions in millimeters
Maximum Ratings Rating at 25 C ambient temperature unless otherwise specified.
o
Maximum DC reverse voltage
Maximum recurrent peak reverse voltage
Average forward rectified current
half wave rectification with resistive load
t<1ms
t=1ms
t=1s
Power dissipation (note)
Junction temperature
Storage temperature range
1N914,1N914A,1N914B
UNITS
VR
VRM
75
100
V
V
IO
75
mA
4.0
1.0
0.5
250
175
- 65 --- + 175
Forward surge current
IFSM
Ptot
Tj
TSTG
A
mW
℃
℃
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Electrical Characteristics Rating at 25 C ambient temperature unless otherwise specified.
o
Min
Typ
Max
Ctot
0.62
-
-
1.0
0.72
1.0
25
5
50
4
nA
µA
µA
pF
trr
-
-
8
ns
Vfr
-
-
2.5
V
RθjA
-
-
500
℃/W
Forw ard voltage @1N914,1N914A,I F=10mA
1N914B,I F=5mA
VF
1N914B,I F=100mA
Leakage current
@V R=20V
@V R=75V
IR
@V R=20V,Tj=150℃
Capacitance
@ V R=0V,f=1MHZ
Reverse recovery time @I F=10mA,IR=10mA,
RL=100Ω,measured at I R=1mA
Voltage rise w hen sw itching on
tested w ith 50mA pulses t r=20ns
Thermal resistance junction to ambient (note )
Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
UNITS
V
1N914/1N914A/1N914B
Small Signal Switching Diodes
Ratings AND Charactieristic Curves
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN VERSUS AMBIENT TEMPERATURE
FIG.2 -- FORWARD CHARACTERISTICS
mA
mW
10
500
3
450
10 2
400
Ptot
350
IF
300
1N914B
10
1N914,1N914A
250
1
200
150
10
100
-1
50
0
0
100
10 -2
200℃
1
0
TA
VF
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
V=tp/T
IFSM
10
tp
n=0
0.1
0.2
0.5
1
T=1/fp
IFSM
T
0.1
10
-5
10
-3
10
-2
10
tp
-1
1
10S
2V
1N914/1N914A/1N914B
Small Signal Switching Diodes
Ratings AND Charactieristic Curves
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT CIRCUIT
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ
VOLTAGE
1.1
D.U.T.
60
TJ=25
f=1MHz
1.0
VRF=2V
2nF
5K
VO
Ctot(VR)
Ctot(OV)
0.9
0.8
0.7
0
2
4
6
8
10V
VR
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS FORWARD CURRENT
nA
10
10 4
4
TJ=25℃
f=1KHz
10 3
r
10 2
10
3
10
2
F
10
10
VR=20V
1
1
0
100
200℃
10
-2
10
-1
1
10
IF
10
2
mA