1N914/1N914A/1N914B Small Signal Switching Diodes REVERSE VOLTAGE: 75 V CURRENT： 75 mA DO - 35 Features ◇ Glass sealed envelope. (MSD) ◇ VRM=100V guaranteed ◇ High reliability Mechanical Data ◇ Case: DO-35, glass case ◇ Polarity: Color band denotes cathode ◇ Weight: 0.004 ounces, 0.13 grams Dimensions in millimeters Maximum Ratings Rating at 25 C ambient temperature unless otherwise specified. o Maximum DC reverse voltage Maximum recurrent peak reverse voltage Average forward rectified current half wave rectification with resistive load t<1ms t=1ms t=1s Power dissipation (note) Junction temperature Storage temperature range 1N914,1N914A,1N914B UNITS VR VRM 75 100 V V IO 75 mA 4.0 1.0 0.5 250 175 - 65 --- + 175 Forward surge current IFSM Ptot Tj TSTG A mW ℃ ℃ Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Electrical Characteristics Rating at 25 C ambient temperature unless otherwise specified. o Min Typ Max Ctot 0.62 - - 1.0 0.72 1.0 25 5 50 4 nA µA µA pF trr - - 8 ns Vfr - - 2.5 V RθjA - - 500 ℃/W Forw ard voltage @1N914,1N914A,I F=10mA 1N914B,I F=5mA VF 1N914B,I F=100mA Leakage current @V R=20V @V R=75V IR @V R=20V,Tj=150℃ Capacitance @ V R=0V,f=1MHZ Reverse recovery time @I F=10mA,IR=10mA, RL=100Ω,measured at I R=1mA Voltage rise w hen sw itching on tested w ith 50mA pulses t r=20ns Thermal resistance junction to ambient (note ) Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. UNITS V 1N914/1N914A/1N914B Small Signal Switching Diodes Ratings AND Charactieristic Curves FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE FIG.2 -- FORWARD CHARACTERISTICS mA mW 10 500 3 450 10 2 400 Ptot 350 IF 300 1N914B 10 1N914,1N914A 250 1 200 150 10 100 -1 50 0 0 100 10 -2 200℃ 1 0 TA VF FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T IFSM 10 tp n=0 0.1 0.2 0.5 1 T=1/fp IFSM T 0.1 10 -5 10 -3 10 -2 10 tp -1 1 10S 2V 1N914/1N914A/1N914B Small Signal Switching Diodes Ratings AND Charactieristic Curves FIG.4 -- RECTIFICATION EFFICIENCY JJJJJJJJMEASUREMENT CIRCUIT FIG.5 -- RELATIVE CAPACITANCE VERSUS JJJJJJJJJJJJJJ VOLTAGE 1.1 D.U.T. 60 TJ=25 f=1MHz 1.0 VRF=2V 2nF 5K VO Ctot(VR) Ctot(OV) 0.9 0.8 0.7 0 2 4 6 8 10V VR FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATUREFF FIG.7 -- DYNAMIC FORWARD RESISTANCE FFFVERSUS FORWARD CURRENT nA 10 10 4 4 TJ=25℃ f=1KHz 10 3 r 10 2 10 3 10 2 F 10 10 VR=20V 1 1 0 100 200℃ 10 -2 10 -1 1 10 IF 10 2 mA