GALAXY ELECTRICAL

BL GALAXY ELECTRICAL
1N4151
REVERSE VOLTAGE : 50 V
CURRENT: 0.15 A
SMALL SIGNAL SWITCHING DIODE
FEATURES
Silicon epitaxial planar diode
DO-35(GLASS)
High speed switching diode
500 mW power dissipation
MECHANICAL DATA
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
half w ave rectification w ith resistive load
@ TA=25 and f 50Hz
Forw ard surge current @ t<1s and TJ =25
Pow er dissipation
@ TA=25
Junction temperature
Storage temperature range
1N4151
UNITS
VR
VRM
50.0
75.0
V
V
IAV
1501)
mA
IFSM
Ptot
TJ
TSTG
500.0
5001)
175
-55 --- +175
mA
mW
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
Forw ard voltage @ IF=10mA
Leakage current
@ VR=50V
@ VR=20V TJ =150
Capacitance
@ V F=VR=0V
Reverse breakdow n voltage
tested w ith 5μA pulses
Reverse recovery time
from IF=10mA to IR=10mA to IR=1mA
from IF=10mA to IR=1mA, VR=6V. RL=100Ω.
Thermal resistance junction to ambient
Rectification efficiency @ 100MHz,V RF=2V
VF
MIN
-
TYP
-
MAX
1.0
UNITS
V
IR
IR
CJ
-
-
50.0
50.0
2
nA
μA
pF
V(BR)R
75.0
-
-
V
trr
-
-
RθJA
ηv
0.45
-
4
2
3501)
-
ns
ns
K/W
-
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
Document Number 0268002
BLGALAXY ELECTRICAL
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1.
RATINGS AND CHARACTERISTIC CURVES
1N4151
FIG.1 -- ADMISSIBLE POWER DISSIPATION
NNNNNN VERSUS AMBIENT TEMPERATURE
FIG.2 -- FORWARD CHARACTERISTICS
mA
10 3
mW
1000
900
800
Ptot
10 2
700
600
T J =100
I F 10
500
T J =25
400
1
300
200
10 -1
100
0
0
100
200℃
10 -2
TA
0
1
VF
2V
FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
V=tp/T
IFRM
IFRM
tp
10
T=1/fp
n=0
T
0.1
0.2
1
0.5
0.1
10
-5
10
-4
10
-3
10
-2
10
-1
1
10S
tp
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Document Number 0268002
BLGALAXY ELECTRICAL
2.
RATINGS AND CHARACTERISTIC CURVES
FIG.4 -- RECTIFICATION EFFICIENCY
JJJJJJJJMEASUREMENT CIRCUIT
1N4151
FIG.5 -- RELATIVE CAPACITANCE VERSUS
JJJJJJJJJJJJJJ
VOLTAGE
1.1
T J =25
f=1MHz
1.0
D.U.T.
60
Ctot(V R )
Ctot(OV)
VRF=2V
2nF
5K
VO
0.9
0.8
0.7
0
2
4
6
8
1 0V
VR
FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATUREFF
FIG.7 -- DYNAMIC FORWARD RESISTANCE
FFFVERSUS FORWARD CURRENT
nA
10
10 4
4
TJ=25℃
f=1MHz
10 3
10
r
10 2
F
10
10
3
2
10
V R =50V
1
0
10 0
20 0℃
1
10
-2
10
-1
1
10
IF
10
2
mA
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Document Number 0268002
BLGALAXY ELECTRICAL
3.