BL GALAXY ELECTRICAL 1N4154 REVERSE VOLTAGE : 25 V CURRENT: 0.15 A SMALL SIGNAL SWITCHING DIODE FEATURES Silicon epitaxial planar diode DO-35 High speed switching diode 500 mW power dissipation MECHANICAL DATA Case: DO-35,glass case Polarity: Color band denotes cathode Weight: 0.004 ounces, 0.13 grams Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at ２５ ambient temperature unless otherwise specified. MAXIMUM RATINGS Reverse voltage Peak reverse voltage Average forw ard rectified current half w ave rectification w ith resistive load VR=0V Forw ard surge current @ tP=1µ s Pow er dissipation @ TA=２５ Junction temperature Storage temperature range VR VRM IF(AV) IFSM Ptot TJ TSTG 1N4154 UNITS 25 35 V V 1501) mA 2.0 5001) 175 -55 --- +175 A mW 1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. ELECTRICAL CHARACTERISTICS Forw ard voltage @ IF=30mA Leakage current @ VR=25V @ VR=25V TJ =150 Capacitance @ V R=0V,f=1MHz,VHF=50mV Reverse breakdown voltage tested with 5μA pulses Reverse recovery time from IF=10mA to IR=10mA to IR=1mA from IF=10mA to IR=1mA, VR=6V. RL=100Ω. Thermal resistance junction to ambient Rectification efficiency @ 100MHz,V RF=2V VF MIN - TYP - MAX 1.0 UNITS V IR IR CJ - - 100 100 4.0 nA μA pF V(BR)R 35 - - V trr - - RθJA ηv 0.45 - 4 2 5001) - ns ns K/W - 1)Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Document Number 0268041 BLGALAXY ELECTRICAL www.galaxycn.com 1. RATINGS AND CHARACTERISTIC CURVES 1N4154 FIG.1 -- ADMISSIBLE POWER DISSIPATION NNNNNN VERSUS AMBIENT TEMPERATURE FIG.2 -- FORWARD CHARACTERISTICS mA 10 3 mW 1000 900 800 Ptot 10 2 700 600 T J =100 I F 10 500 T J =25 400 1 300 200 10 -1 100 0 0 100 200℃ 10 -2 TA 0 1 VF 2V FIG.3 -- ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T IFRM IFRM tp 10 T=1/fp n=0 T 0.1 0.2 1 0.5 0.1 10 -5 10 -4 10 -3 10 -2 10 -1 1 10S tp www.galaxycn.com Document Number 0268041 BLGALAXY ELECTRICAL 2. RATINGS AND CHARACTERISTIC CURVES FIG.4 -- RECTIFICATION EFFICIENCY JJJJJJJJMEASUREMENT CIRCUIT LL4154 FIG.5 -- RELATIVE CAPACITANCE VERSUS JJJJJJJJJJJJJJ VOLTAGE 1.1 T J =25 f=1MHz 1.0 D.U.T. 60 Ctot(V R ) Ctot(OV) VRF=2V 2nF 5K VO 0.9 0.8 0.7 0 2 4 6 8 1 0V VR FIG.6 -- LEAKAGE CURRENT VERSUS JUNCTION TEMPERATUREFF FIG.7 -- DYNAMIC FORWARD RESISTANCE FFFVERSUS FORWARD CURRENT nA 10 10 4 4 TJ=25℃ f=1MHz 10 3 10 r 10 2 F 10 10 3 2 10 V R =50V 1 0 10 0 20 0℃ 1 10 -2 10 -1 1 10 IF 10 2 mA www.galaxycn.com Document Number 0268025 BLGALAXY ELECTRICAL 3.