SMALL SIGNAL SWITCHING DIODES LL4448 Features · Silicon epitaxial planar diode · Fast switching diodes MELF (DO-35) · 500mW power dissipation SOLDERABLE ENDS · This diode is also available in the DO-35 case with the type designation 1N4448 0.020(0.50) 0.011(0.28) Mechanical Data 0.146(3.70) 0.130(3.30) 0.063(1.60) 0.051(1.30) · Case: MiniMELF glass case (DO-35) · Weight: Approx. 0.05 gram Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified) Symbol VR VRM Reverse Voltage Peak Reverse Voltage Average rectified current, Half wave rectification with Resistive load at TA=25℃ and F≥50Hz IFSM Ptot Power dissipation at TA=25℃ Junction temperature TJ TSTG Storage temperature range Units 75 Volts 100 Volts 1501) IAV Surge forward current at t<1S and TJ=25℃ Value mA 500 mA 5001) mW 175 ℃ -65 to +175 ℃ 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) Electrical characteristics (Ratings at 25℃ ambient temperature unless otherwise specified) Forward voltage Leakage current at IF=5mA at IF=10mA at VR=20V at VR=75V at VR=20V, TJ=150℃ Junction Capacitance at VR=VF=0V Reverse breakdown voltage tested with 100μA Pulse Reverse Recovery time from IF=10mA to IR=1mA, VR=6V, RL=100Ω Thermal resistance, junction to Ambient Rectification efficiency at f=100MHz, VRF=2V Symbols VF VF IR IR IR CJ V(BR)R Min. Max. Units 0.72 1 25 5 50 V V nA μA μA 4 pF 100 trr RθJA η Typ. 0.45 1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35) V 4 ns 3501) K/W RATINGS AND CHARACTERISTIC CURVES LL4448 FIG.2-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT FIG.1-FORWARD CHARACTERISTICS mA Ω 103 104 TJ= 25℃ f=1KHz 102 103 TJ=100℃ IF rF TJ=25℃ 10 102 1 10 10-1 10-2 1 0 1 2V 10-2 10-1 1 VF 102 10 mA IF FIG. 4-RELATIVE CAPACITANCE VERSUS VOLTAGE FIG.3-ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE mW 1000 900 1.1 TJ= 25℃ f=1MHz 800 700 Ptot Ctot(VR) Ctot(OV) 600 1.0 0.9 500 400 0.8 300 200 0.7 100 0 0 200 ℃ 100 TA 0 2 4 6 8 VR 10V RATINGS AND CHARACTERISTIC CURVES LL4448 FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE nA 104 D.U.T. 103 60 Ω 2nF VRF=2V 5KΩ VO 102 10 VR= 50V 1 0 200 ℃ 100 FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION A 100 V=tp/T n=0 IFRM IFRM tp 10 T=1/fp 0.1 T 0.2 1 0.5 0.1 10-5 10-4 10-3 10-2 10-1 tp 1 10S