FDP027N08 N-Channel PowerTrench® Mosfet Chip 80V, 223A, 2.7mΩ Part V(BR)DSS FDP027N08 80V IDn RDS(on) TYP 223A 2.21mΩ 1 Die Size 4.3 x 4.7 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • High density DC / DC Converters • High Power & Current Handling Capability • AC Motor Drives • Low RDS (on) per mm2 • Low Gate Charge Maximum Ratings Symbol Parameter Ratings Units VDSS Drain to Source Voltage 80 V VGSS Gate to Source Voltage ±20 V ID Drain Current IDM Drain Current TJ, TSTG 2 3 Continuous (TC = 25°C) 223 Continuous (TC = 100°C) 158 Pulsed 892 Operation Junction & Storage Temperature EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt 4 4 A -55 to 175 °C L=3mH, IAS = 24.72A, RG = 25Ω 917 mJ ISD≤100A, di/dt≤200A/µs VDD≤BVDSS, Starting TJ = 25°C 6.0 V/ns Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Voltage ID =250µA, VGS = 0V TC = 25°C 80 - - V VGS(th) Gate threshold Voltage VGS = VDS, ID =250µA 2.5 - 4.5 V IDSS Zero Gate Voltage Drain Current VDS = 64V, VGS = 0V - - 1 µA VDS = 64V, TC = 150°C - - 500 VGS = ±20V, VDS = 0V - - ±100 nA VGS = 10V, ID = 100A - 2.21 2.7 mΩ IGSS Gate to Body Leakage Current RDS(on) Drain to Source On Resistance 1 1. 2. 3. Notes: Defined by chip design, not subject to production test at wafer level Calculated continuous current based on the maximum allowable junction temperature. Performance will vary based on assembly technique, wire bond configuration and substrate choice Repetitive Rating: Pulse width limited by maximum junction temperature Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 Static Characteristics, TJ = 25°C unless otherwise noted Dynamic Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min VDS = 10V, ID = 100A - 227 - S - 10170 13530 pF - 1670 2220 pF - 35 - pF - 3025 - pF gFS Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance VDS =40V, VGS = 0V f = 1MHz VDS =40V, VGS = 0V Typ Max Units Qg(tot) Total Gate Charge at 10V - 137 178 nC Qgs Gate to Source Gate Charge - 56 - nC Qgs2 Gate Charge Threshold to Plateau - 25 - nC Qgd Gate to Drain “Miller” Charge VDS =40V, ID = 100A VGS = 10V - 28 - nC ESR Equivalent Series Resistance (G-S) f = 1MHz - 2.4 - Ω Min Typ Max Units - 47 104 ns - 66 142 ns - 87 184 ns - 41 92 ns Switching Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Test Conditions VDD = 40V, ID = 100A 5 VGS = 10V, RGEN = 4.7Ω Drain-Source Diode Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter IS Test Conditions Maximum Continuous Drain to Source Diode Forward Current ISM Maximum Pulsed Drain to Source Diode Forward Current VSD 2 Min Typ Max Units - - 223 A - - 892 A - 1.3 V Drain to Source Diode Forward Voltage VGS = 0V, ISD = 100A - trr Reverse Recovery Time 80 - ns Reverse Recovery Charge VGS = 0V, ISD = 100A, VDD = 40V dIF/dt = 100A/μs - Qrr - 112 - nC 4. 5. Notes: Characterised by design & tested at component level, not subject to production test at wafer level Essentially Independent of Operating Temperature Typical Characteristics Ordering Guide Part Number Format Detail / Drawing FDP027N08MW FDP027N08MF FDP027N08MD Un-sawn wafer, electrical rejects inked Page 3 Sawn wafer on film-frame Page 4 Singulated die / chips in waffle pack Page 4 Page2 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Die Drawing 457.5um Mechanical Data Parameter Units Chip Dimensions Un-sawn 4267 X 4699 µm Chip Thickness (Nominal) 200 µm Gate Pad Size 457 X 327 µm Wafer Diameter 150 (subject to change) mm Saw Street 60 (subject to change) µm Wafer orientation on frame Wafer notch parallel with frame flat Topside Metallisation & Thickness Al Backside Metallisation & Thickness Ti-V/Ni-Ag 5 µm 0.65 µm Unpassivated Recommended Die Attach Material Soft Solder or Conductive Epoxy Recommended Wire Bond - Gate Al 125µm X1 Recommended Wire Bond – Source Al 380µm X2 Page3 Topside Passivation Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 5.31mm ±0.13mm pocket size Y = 5.31mm ±0.13mm pocket size Z = 0.41mm ±0.05mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 7 X 7 (49) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which,