FDB035N10A N-Channel Power Trench Mosfet Chip 100V, 214A, 3.5mΩ1 Part V(BR)DSS FDB035N10A IDn 100V RDS(on) 214A 3.5mΩ Die Size 1 4.4 x 6.1 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • High density DC / DC Converters • High Power & Current Handling Capability • AC Motor Drives • Low RDS (on) per mm2 • Low Gate Charge Maximum Ratings Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V VGSS Gate to Source Voltage ±20 V ID IDM TJ, TSTG Drain Current Drain Current 2 3 Continuous (TC = 25°C) 214 Continuous (TC = 100°C) 151 Pulsed 856 Operation Junction & Storage Temperature EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt A -55 to 175 4 4 °C 658 mJ 6.0 V/ns Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Voltage ID =250µA, VGS = 0V TC = 25°C 100 - - V VGS(th) Gate threshold Voltage VGS = VDS, ID =250µA 2.0 - 4.0 V IDSS Zero Gate Voltage Drain Current VDS = 80V, VGS = 0V - - 1 µA IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA VGS = 10V, ID = 75A - 3 3.5 mΩ VGS = 0V, ISD = 75A - - 1.25 V 1 RDS(on) Drain to Source On Resistance VSD Drain to Source Diode Forward Voltage 1. 2. 3. Notes: Defined by chip design, not subject to production test at wafer level Performance will vary based on assembly technique and substrate choice Repetitive Rating: Pulse width limited by maximum junction temperature Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 Static Characteristics, TJ = 25°C unless otherwise noted Dynamic Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max GFS Forward Transconductance VDS = 10V, ID = 75A - 167 - S - 5485 7295 pF - 2430 3230 pF - 210 - pF - 89 116 nC - 24 - nC - 8 - nC - 25 - nC Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge VDS =25V, VGS = 0V f = 1MHz VDS =80V, ID = 75A VGS = 10V Units Switching Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time ESR Equivalent Series Resistance(G-S) Test Conditions VDD = 50V, ID = 75A 5 VGS = 10V, RGEN = 4.7Ω Drain shorted to Source; f=1Mhz Min Typ Max Units 100 - - V 2.0 - 4.0 V - - 1 µA - - ±100 nA - 1.2 - Ω Drain-Source Diode Characteristics4, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units IS Maximum Continuous Drain to Source Diode Forward Current - - 214 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 856 A - 1.25 V VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - trr Reverse Recovery Time 72 - ns Reverse Recovery Charge VGS = 0V, ISD = 75A, VDD = 80V dIF/dt = 100A/μs - Qrr - 129 - nC Ordering Guide Part Number Format Detail / Drawing FDB035N10AMW Un-sawn wafer, electrical rejects inked Page 3 FDB035N10AMF Sawn wafer on film-frame Page 4 FDB035N10AMD Singulated die / chips in waffle pack Page 4 4. 5. Notes: Characterised by design & tested at component level, not subject to production test at wafer level Essentially Independent of Operating Temperature Typical Characteristics Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page2 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Die Drawing SOURCE SOURCE SOURCE GATE Mechanical Data Parameter Units Chip Dimensions Un-sawn 4445 X 6096 µm Chip Thickness (Nominal) 200 µm Gate Pad Size 622 X 420 µm Wafer Diameter 150 (subject to change) mm 60 (subject to change) µm Saw Street Wafer notch parallel with frame flat Topside Metallisation & Thickness Al Backside Metallisation & Thickness Ti-V/Ni-Ag 5 µm 0.65 µm Topside Passivation Unpassivated Recommended Die Attach Material Soft Solder or Conductive Epoxy Recommended Wire Bond - Gate Al 125µm X1 Recommended Wire Bond – Source Al 380µm X2 Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page3 Wafer orientation on frame Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 4.55mm ±0.13mm pocket size Y = 6.83mm ±0.13mm pocket size Z = 0.81mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 7 X 5 (35) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which,