HGTG30N60 600V Planar IGBT Chip 600V, 60A, VCE(sat) = 1.8V Part VCES ICn VCE (sat) Typ Die Size HGTG30N60 600V 60A 1.8 6.6 x 6.6 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • AC & DC Motor Controls • Fast Switching & Low Conduction Loss • General Purpose Inverters • High Input Impedance • Short Circuit Rated Maximum Ratings Symbol Parameter Ratings Units BVCES Collector to Emitter Voltage 600 V VGES Gate to Emitter Voltage ±20 V 75 A IC Drain Current 1 Continuous (TC = 25°C) Continuous (TC = 110°C) ICM Pulsed Collector Current 3 SCWT Short Circuit Withstand Time TJ, TSTG 60 A 240 A 10 µS -55 to 150 °C VCE = 360V, RG = 3Ω, VGE = 10V, TC = 125°C Operation Junction & Storage Temperature Static Characteristics, TJ = 25° unless otherwise noted Symbol Parameter Test Conditions Min Typ Max BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - TJ = 25 C - - 250 µA TJ = 125oC - - 4.0 mA - - ±250 nA o ICES Collector Cut-Off Current IGES G-E Leakage Current VGE = ±20 V Notes: Defined by chip design, not subject to 100% production test at wafer level Performance will vary based on assembly technique and substrate choice Repetitive Rating: Pulse width limited by maximum junction temperature Page1 1. 2. 3. VCE = 600 Units Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components On Characteristics, TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units VGE(th) G-E Threshold Voltage IC = 250µA, VCE = 600V 4.5 5..5 7.0 V IC = 30A, VGE = 15V - 1.8 2.6 V VCE(sat) Collector to Emitter Saturation Voltage IC = 30A, VGE = 15V TC = 125°C - 1.6 2.0 V Min Typ Max Units VGE = 15V - 225 - VGE = 20V - 300 - Min Typ Max - 25 - ns - 12 - ns - 150 - ns - 38 - ns - 280 - mJ Dynamic Characteristics2, TJ = 25°C unless otherwise noted Symbol Parameter Qg On-State Gate Charge Test Conditions VCE = 300V, IC = 30A nC Switching Characteristics3, TJ = 25°C unless otherwise noted Symbol Parameter td(on) Turn-On Delay Time tr Rise Time td (off) Turn-Off Delay Time Test Conditions VCE = 390V, ICE = 30A RG = 3Ω, VGE = 15V VCE =390V L = 200µH TC = 25° Units tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss - 240 - mJ td (on) Turn-On Delay Time - 24 - ns tr Rise Time - 11 - ns td (off) Turn-Off Delay Time - 180 - ns - 58 - ns - 280 - µJ - 450 - µJ tf Fall Time Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss VCE = 390V, IC = 30A RG = 3Ω, VGE = 15V L=200µH TC = 125°C Notes: 1. Performance will vary based on assembly technique and substrate choice 2. Defined by chip design, not subject to 100% production test at wafer level 3. Specified in discrete package for indicative purposes only, bare die performance will vary depending on module design. 4. Part Number Format Detail / Drawing HGTG30N60MW HGTG30N60MF HGTG30N60MD Un-sawn wafer, electrical rejects inked Page 3 Sawn wafer on film-frame Page 4 Singulated die / chips in waffle pack Page 4 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page2 Ordering Guide Die Drawing – Dimensions (µm) 6604 6604 813 813 Mechanical Data Parameter Units Chip Dimensions Un-sawn 6604 x 6604 µm Chip Thickness (Nominal) 300 µm Gate Pad Size 813 x 813 µm Wafer Diameter 150 (subject to change) mm Saw Street 80 (subject to change) µm Wafer notch parallel with frame flat Topside Metallisation & Thickness Al 4 µm Backside Metallisation & Thickness V/Ni/Ag 0.45 µm Topside Passivation Silicon Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Recommended Wire Bond - Gate Al 150µm X1 Recommended Wire Bond – Source Al 500µm X2 Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page3 Wafer orientation on frame Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 6.86mm ±0.13mm pocket size Y = 6.86mm ±0.13mm pocket size Z = 0.89mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 4 X 4 (16) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which,