FFP30S60S STEALTH™ II Rectifier Diode Chip 600V, 30A, VF 2.1V, trr = 28ns Part VRRM IF(AV)n VF Typ trr Typ Die Size FFP30S60S 600V 30A 2.1V 28ns 3.7 x 3.7 mm 2 See page 2 for ordering part numbers & supply formats Features Applications • General Purpose • Hyperfast Soft Recovery trr = 28ns @ IF = 30A • Free Wheeling Diode • Low Stored Charge • Avalanche Energy Rated Maximum Ratings Symbol Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V 1 IF(AV) Average Rectified Forward Current @ TC = 103°C 30 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 300 A TJ, TSTG Operation Junction & Storage Temperature -65 to 150 °C Electrical Characteristics, TJ = 25° unless otherwise noted Parameter Test Conditions VF Forward Voltage 2 IR Reverse Current 2 IF = 30A VR = 600V IF = 1A,dI/dt = 100A/µs, VR= 30V trr Reverse Recovery 3 Time Irr Reverse Recovery 3 Current S factor Softness Factor Qrr WAVL Notes: 3 IF = 30A, dI/dt = 200A/µs, VR= 390V Reverse Recovery 3 Charge Avalanche Energy (L = 40mH) 3 Min Typ Max Units TC = 25°C - 2.1 2.6 V TC = 125°C - 1.6 - TC = 25°C - - 100 TC = 125°C - - 500 TC = 25°C - 25 - TC = 25°C - 28 - TC = 125°C - 75 - TC = 25°C - 2.4 - TC = 125°C - 6.3 - TC = 25°C - 0.9 - TC = 125°C - 0.9 - TC = 25°C - 34 - TC = 125°C - 236 - 20 - - µA ns A nC mJ 1. Performance will vary based on assembly technique and substrate choice. 2. Pulse: Test Pulse width = 300µs, Duty Cycle = 2% 3. Tested in discrete package, not subject to 100% test at wafer level Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 Symbol Ordering Guide Part Number Format Detail / Drawing FFP30S60SMW Un-sawn wafer, electrical rejects inked Page 2 FFP30S60SMF Sawn wafer on film-frame Page 3 FFP30S60SMD Singulated die / chips in waffle pack Page 3 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Die Drawing – Dimensions in µm 3708 40 3251 3251 Passivated area 3708 ANODE Chip backside is CATHODE Mechanical Data Parameter Units Chip Dimensions Un-sawn 3708 x 3708 µm Chip Thickness (Nominal) 250 µm Anode Pad Size 3251 x 3251 µm Wafer Diameter 127 (subject to change) mm Saw Street 80 (subject to change) µm Wafer orientation on frame Wafer notch parallel with frame flat Topside Metallisation & Thickness Al 6 µm Backside Metallisation & Thickness V/Ni/Ag 0.3 µm Topside Passivation Silicon Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Al 380µm X2 Page2 Recommended Wire Bond - Anode Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 3.81mm ±0.13mm pocket size Y = 3.81mm ±0.13mm pocket size Z = 0.41mm ±0.05mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 10 X 10 (100) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page3 1. Life support devices or systems are devices or systems which,