MYXDB0600 10CEN

SiC Schottky Diode Rectifier Bridge
600 Volt 10 Amp Hermetic
MYXDB0600-10CEN
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Product Overview
Features
Benefits
• Essentially no switching losses
• High voltage 600V isolation
• Higher efficiency
• High current 10A
• High temperature 210°C
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• BeO free and RoHS compliant
• HMP solder tinned leads available
• Electrically isolated flange
• Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
• No reverse recovery time
• Screening options available
• Reduction of heat sink requirements
Applications
Case
NC
• Harsh environment rectification
• Harsh environment regulators
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Other packaging options available
Pin 1
-
Absolute Maximum Ratings* (Per single diode)
Symbols
Figure 1: TO-258 5 PIN
Pin 2 Pin 3 Pin 4 Pin 5
NC
~
~
+
Figure 2: Circuit Diagram
Values
Units
DC Reverse Voltage
600
Volts
VRRM
Repetitive Peak Reverse Voltage
600
Volts
IF(AVG)
Average Forward Current
10
Amps
IFRM
Repetitive Peak Forward Current (Tp=10ms, Half Sine Wave)
60
Amps
IFSM
Surge Peak Forward Current (Tp=10µs, Half Sine Wave )
100
Amps
PD
Total Power Dissipation
29
Watts
TJ
Junction Temperature Range
-55 to +210
o
Tstg
Storage Temperature Range
-55 to +210
o
Values
Units
VR
Parameters
C
C
Thermal Properties
Symbols
RθJC
March 2014 Rev 1.0
Parameters
Thermal Resistance, Junction To Case
1.6
o
C / Watt
1
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com
SiC Schottky Diode Rectifier Bridge
600 Volt 10 Amp Hermetic
MYXDB0600-10CEN
y
r
a
in
Electrical Characteristics
Symbols
Parameters
VF
Forward Voltage ##
IR
Reverse Current ##
Qc
C
Typ
Max
IF = 10A, TJ = 25oC
2.2
2.5
IF = 10A, TJ = 210oC
3.2
4.1
VR = 600V, TJ= 25oC
10
100
VR = 600V, TJ = 210oC
140
1000
VR = 600V, TJ=25oC, IF=10A, di/dt=500 A/μs
28
VR = 0V, TJ=25oC, f=1MHz
550
VR = 200V, TJ=25oC, f=1MHz
65
VR = 400V, TJ=25oC, f=1MHz
50
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Total Capacitive
Charge ##
Total Capacitance ##
## Calculated per single diode
Test Conditions
Units
Volts
μAmps
nC
pF
CE = TO-258 5 PIN
####### = Batch code
yyww = Date code
MICROSS
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#
#
#
#
#
#
##


yyww
yy = year
ww = week
(Font and text colour is not representative of actual parts produced)
Figure 3: Package Dimensions
March 2014 Rev 1.0
2
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com
SiC Schottky Diode Rectifier Bridge
600 Volt 10 Amp Hermetic
MYXDB0600-10CEN
y
r
a
in
* Absolute Maximum Ratings Disclaimer
Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress
ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions
for any duration may affect device reliability and operational life.
Document Title
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Silicon Carbide Diode Rectifier Bridge 600 Volt 10 Amp Hermetic MYXDB0600-10CEN
Revision History
Revision #
History
1.0
Initial release
March 2014 Rev 1.0
Release Date
March 2014
Status
Preliminary
3
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com