Silicon Carbide Schottky Diode 600 Volt 5 Amp Hermetic SMD MYXDS0600-05DA0 y r a in Product Overview Features Benefits • High voltage 600V isolation in a small package outline • Essentially no switching losses • Higher efficiency • High current 5A • High temperature 210°C m i l e r P • BeO free and RoHS compliant • HMP solder tinned leads available • Electrically isolated flange • Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage and superior high temperature performance • No reverse recovery time • Screening options available • High reliability Applications • Harsh environment motor drive Figure 1: SMD 0.5 • Harsh environment regulators Pad 1 Pad 3 ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Surface mount Pad 2 Figure 2: Circuit Diagram • Other packaging options available Absolute Maximum Ratings* Symbols Values Units DC Reverse Voltage 600 Volts VRRM Repetitive Peak Reverse Voltage 600 Volts IF(AVG) Average Forward Current 5 Amps IFRM Repetitive Peak Forward Current ( Tp=10ms, Half Sine Wave) 26.3 Amps IFSM Surge Peak Forward Current (Tp=10ms, Half Sine Wave ) 45 Amps PD Total Power Dissipation 29.4 Watts TJ Junction Temperature Range -55 to +210 o Tstg Storage Temperature Range -55 to +210 o Values Units VR Parameters C C Thermal Properties Symbols RθJC March 2014 Rev 1.0 Parameters Thermal Resistance, Junction To Case 6.3 o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Schottky Diode 600 Volt 5 Amp Hermetic SMD MYXDS0600-05DA0 Electrical Characteristics Symbols Parameters VF Forward Voltage Typ Max IF = 5A, TJ = 25oC 1.6 1.8 IF = 5A, TJ = 210oC 2.2 3.0 VR = 600V, TJ = 25oC 10 100 VR = 600V, TJ = 210oC 30 300 VR = 600V, TJ = 25oC, IF = 1A, di/dt = 200 A/μs 17 VR = 0V, TJ = 25oC, f= 1MHz 340 VR = 200V, TJ = 25oC, f= 1MHz 40 VR = 400V, TJ = 25oC, f= 1MHz 30 m i l e r P IR Reverse Current Qc Total Capacitive Charge C y r a in Test Conditions Total Capacitance Units Volts μAmps nC pF yywwa = Date code and batch yy = year ww = week a = batch (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions March 2014 Rev 1.0 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Schottky Diode 600 Volt 5 Amp Hermetic SMD MYXDS0600-05DA0 y r a in * Absolute Maximum Ratings Disclaimer Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Document Title m i l e r P Silicon Carbide Schottky Diode 600 Volt 5 Amp Hermetic SMD MYXDS0600-05DA0 Revision History Revision # History 1.0 Initial release March 2014 Rev 1.0 Release Date March 2014 Status Preliminary 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com