ALR030 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .310 2L FLG DESCRIPTION: A 4x .062 x 45° The ASI ALR030 is Designed for 1200 – 1400 MHz, L-Band Applications. .040 x 45° C 2xB ØE D F G H FEATURES: I • Internal Input/Output Matching Network • PG = 7.0 dB at 30 W/ 1400 MHz • Omnigold™ Metalization System M 2.75 A VCC 32 V PDISS 63 W @ TC = 25 °C R -65 °C to +250 °C TSTG -65 °C to +200 °C θJC 2.4 °C/W CHARACTERISTICS MINIMUM inches / mm inches / mm A .095 / 2.41 .105 / 2.67 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 MAXIMUM D .286 / 7.26 E .110 / 2.79 .130 / 3.30 F .306 / 7.77 .318 / 8.08 .306 / 7.77 G .148 / 3.76 H .400 / 10.16 .119 / 3.02 J .552 / 14.02 .572 / 14.53 K .790 / 20.07 .810 / 20.57 L .300 / 7.62 .320 / 8.13 M .003 / 0.08 .006 / 0.15 N .052 / 1.32 .072 / 1.83 P .118 / 3.00 .131 / 3.33 .230 / 5.84 R ORDER CODE: ASI10512 TC = 25 °C NONETEST CONDITIONS SYMBOL P DIM I TJ L N MAXIMUM RATINGS IC J K BVCBO IC = 10 mA BVCER IC = 20 mA BVEBO IE = 1 mA ICES VE = 28 V hFE VCE = 5.0 V IC = 1.0 A PG ηC VCC = 28 V POUT = 30 W RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 55 V 55 V 3.5 V 15 f = 1.2 to 1.4 GHz UNITS 7.0 45 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5 mA 150 --dB % REV. B 1/1