CBSL150 - Advanced Semiconductor, Inc.

CBSL150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI CBSL150 is Designed for
900 MHz Class AB Cellular Base
Station Amplifiers.
PACKAGE STYLE .400 BAL FLG (C)
.080x45°
FEATURES:
A
B
FULL R
(4X).060 R
• Internal Input/Output Matching
• PG = 9.0 dB Typ. at 150 W/ 900 MHz
• Omnigold™ Metalization System
E
M
D
C
.1925
F
H
G
N
I
L
MAXIMUM RATINGS
J
25 A
IC
28 V
VCEO
60 V
VEBO
3.5 V
PDISS
300 W @ TC = 25 C
O
O
O
-65 C to +200 C
TJ
DIM
MIN IMUM
inches / m m
inches / m m
A
.220 / 5.59
.230 / 5.84
O
-65 C to +150 C
θJC
0.6 C/W
C
.120 / 3.05
D
.380 / 9.65
.130 / 3.30
.390 / 9.91
E
.780 / 19.81
.820 / 20.83
F
.435 / 11.05
G
1.090 / 27.69
H
1.335 / 33.91
1.345 / 34.16
I
.003 / 0.08
.007 / 0.18
J
.060 / 1.52
.070 / 1.78
K
.082 / 2.08
.100 / 2.54
M
.395 / 10.03
.407 / 10.34
N
.850 / 21.59
.870 / 22.10
.205 / 5.21
L
O
TSTG
MAXIMUM
.210 / 5.33
B
VCES
K
O
CHARACTERISTICS
ORDER CODE: ASI10586
O
TC = 25 C
NONETEST CONDITIONS
SYMBOL
BVCEO
IC = 100 mA
BVCER
IC = 100 mA
BVCES
MINIMUM TYPICAL MAXIMUM
UNITS
26
V
35
V
IC = 50 mA
60
V
BVEBO
IE = 10 mA
3.5
V
ICES
VCE = 30 V
hFE
VCE = 5.0 V
IC = 1.0 A
PG
IMD
ηC
VCC = 26 V
POUT = 150 W
ψ
RBE = 200 Ω
30
45
10
mA
120
---
-28
dB
dBc
%
8.0
ICQ = 2 X 150 mA
f = 960 MHz
VSWR = 5:1 at all phase angles
35
No Degradation in Output Power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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