CBSL150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL150 is Designed for 900 MHz Class AB Cellular Base Station Amplifiers. PACKAGE STYLE .400 BAL FLG (C) .080x45° FEATURES: A B FULL R (4X).060 R • Internal Input/Output Matching • PG = 9.0 dB Typ. at 150 W/ 900 MHz • Omnigold™ Metalization System E M D C .1925 F H G N I L MAXIMUM RATINGS J 25 A IC 28 V VCEO 60 V VEBO 3.5 V PDISS 300 W @ TC = 25 C O O O -65 C to +200 C TJ DIM MIN IMUM inches / m m inches / m m A .220 / 5.59 .230 / 5.84 O -65 C to +150 C θJC 0.6 C/W C .120 / 3.05 D .380 / 9.65 .130 / 3.30 .390 / 9.91 E .780 / 19.81 .820 / 20.83 F .435 / 11.05 G 1.090 / 27.69 H 1.335 / 33.91 1.345 / 34.16 I .003 / 0.08 .007 / 0.18 J .060 / 1.52 .070 / 1.78 K .082 / 2.08 .100 / 2.54 M .395 / 10.03 .407 / 10.34 N .850 / 21.59 .870 / 22.10 .205 / 5.21 L O TSTG MAXIMUM .210 / 5.33 B VCES K O CHARACTERISTICS ORDER CODE: ASI10586 O TC = 25 C NONETEST CONDITIONS SYMBOL BVCEO IC = 100 mA BVCER IC = 100 mA BVCES MINIMUM TYPICAL MAXIMUM UNITS 26 V 35 V IC = 50 mA 60 V BVEBO IE = 10 mA 3.5 V ICES VCE = 30 V hFE VCE = 5.0 V IC = 1.0 A PG IMD ηC VCC = 26 V POUT = 150 W ψ RBE = 200 Ω 30 45 10 mA 120 --- -28 dB dBc % 8.0 ICQ = 2 X 150 mA f = 960 MHz VSWR = 5:1 at all phase angles 35 No Degradation in Output Power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1