CBSL60B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL60B is Designed for Class AB, Cellular Base Station Applications up to 960 MHz. PACKAGE STYLE .450 BAL FLG (A) .060x45° B A FEATURES: C • Internal Input/Output Matching Networks • PG = 8.5 dB at 60 W/960 MHz • Omnigold™ Metalization System D P F G H J M MAXIMUM RATINGS MINIMUM DIM 60 V MAXIMUM inches / mm inches / mm .055 / 1.40 A .120 / 3.05 B .130 / 3.30 .785 / 19.94 C VCEO VEBO PDISS 28 V D .455 / 11.56 E .120 / 3.05 146 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.2 °C/W .465 / 11.81 .130 / 3.30 .230 / 5.84 F 3.5 V G .838 / 21.28 .850 / 21.59 H 1.095 / 27.81 1.105 / 28.07 J .525 / 13.34 .535 / 13.59 K .002 / 0.05 .005 / 0.15 L .055 / 1.40 .065 / 1.65 M .080 . 2.03 .095 / 2.41 .445 / 11.30 .455 / 11.56 .195 / 4.95 N CHARACTERISTICS P ORDER CODE: ASI10584 TC = 25 °C NONETEST CONDITIONS SYMBOL N L 8.0 A VCBO .100x45° E K IC FULL R MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 60 V BVCEO IC = 100 mA 28 V BVEBO IE = 20 mA 3.5 V ICEO VCE = 25 V hFE VCE = 5.0 V IC =3.0 A PG VCC = 26 V POUT = 60 W ICQ = 2 X 200 mA VSRW VCC = 26 V 25 f = 960 MHz f = 960 MHz 30 mA 80 --- 8.5 dB 5:1 --- A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. B 1/1