npn silicon rf power transistor s175-28

S175-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI S175-28 is a 28 V high power
transistor designed for linear HF applications.
The device utilizes emitter ballastiong for
ruggedness.
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
FEATURES:
C
E
FULL R
Ø.125 NOM.
C
B
• PG = 14 dB min. at 175 W/30 MHz
• IMD = -32 dBc max. at 175 W (PEP)
• Omnigold™ Metalization System
• Common Emitter configuration
B
E
H
VCES
60 V
K
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
MAXIMUM
.125 / 3.18
B
30 A
G
F
I J
MAXIMUM RATINGS
IC
E
D
C
.245 / 6.22
.255 / 6.48
D
.720 / 18.28
.7.30 / 18.54
.125 / 3.18
E
F
.970 / 24.64
.980 / 24.89
G
.495 / 12.57
.505 / 12.83
H
.003 / 0.08
.007 / 0.18
I
.090 / 2.29
.110 / 2.79
320 W @ TC = 25 °C
J
.150 / 3.81
.175 / 4.45
TJ
-65 °C to +200 °C
L
.980 / 24.89
1.050 / 26.67
TSTG
-65 °C to +150 °C
θJC
0.55 °C/W
VEBO
PDISS
3.5 V
CHARACTERISTICS
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
.280 / 7.11
K
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 100 mA
60
V
BVCEO
IC = 50 mA
33
V
BVEBO
IE = 10 mA
3.5
V
hFE
VCE = 5.0 V
IC = 1.0 A
10
---
GP
IMD
ηC
VSWR
14
VCE = 28 V
PIN = 7.0 W
POUT = 175 W (PEP)
dB
dBc
%
---
f = 30 MHz
65
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
-32
30:1
REV. A
1/1