BLW60C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW60C is Designed for 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • Common Emitter • PG = 5.0 dB at 45 W/175 MHz • Omnigold™ Metalization System A E ØC E B D H I J MAXIMUM RATINGS F IC 9.0 A VCESM 36 V VCEO 16 V VEBO 4.0 V PDISS 100 W @ TC = 25 °C TJ E -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 1.75 °C/W CHARACTERISTICS SYMBOL G #8-32 UNC-2A DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 E .320 / 8.13 .330 / 8.38 F .100 / 2.54 .130 / 3.30 G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 .175 / 4.45 MAXIMUM .750 / 19.05 J TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM BVCES IC = 50 mA 36 BVCEO IC = 100 mA 16 BVEBO IE = 25 mA 4.0 ICES VCE = 15 V hFE VCE = 5.0 V CC VCB = 15 V GP ηC VCC = 12.5 V IC = 4.0 A 10 f = 1.0 MHz POUT = 45 W f = 175 MHz 5.0 75 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. UNITS V V 25 mA 80 --- 160 pF dB % REV. 1/1