TH430 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TH430 is Designed for SSB ad VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE 0.550 4L FLG E C FEATURES: PG = 14.5 dB min. at 220 W/30 MHz IMD = -30 dB max. Omnigold™ Metalization System B E MAXIMUM RATINGS IC 40 A VCBO 110 V VCEO 55 V VEBO 4.0 V PDISS 330 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C JC 0.40 °C/W CHARACTERISTICS SYMBOL TC = 25° C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 55 V BVCES IC = 200 mA 110 V BVEBO IE = 20 mA 4.0 V ICEO VCE = 30 V 10 mA ICES VCE = 60 V 10 mA hFE VCE = 6.0 V 80 --- Cob VCB = 50 V 360 pF GP IMD3 C VCE = 50 V -30 dB dBc % IC = 10 A 15 f = 1.0 MHz ICQ = 150 mA f = 30 MHz 320 14.5 POUT = 250 W (PEP) 37 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. C 1/1