PT6709 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT6709 is a planar transistor designed primarily for UHF Class-C, 28 V transmitters. up to 400 MHz. PACKAGE STYLE .380 2L FLG FEATURES: • PG = 4.6 dB min. at 20 W/400 MHz • ηC = 60 % min. at 20W/400 MHz • Omnigold™ Metalization System • Emitter Ballasting B E E C MAXIMUM RATINGS IC 3.0 A VCBO 60 V VCEO 35 V VEBO 4.0 V PDISS 30 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 5.8 °C/W CHARACTERISTICS SYMBOL TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 60 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V hFE VCE = 5.0 V Cob VCB = 30 V f = 1.0 MHz Cib VEB = 0.5 V f = 1.0 MHz POUT VCE = 28 V f = 136 MHz GP VCE = 28 V f = 400 MHz ηC 1.0 IC = 500 mA IC = 1.19 A 5.0 mA --- 30 pF 96 pF 20 23 W 4.6 6.1 dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. % REV. A 1/1