BLV32F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters. FEATURES: PACKAGE STYLE .500 6L FLG • Diffused emitter ballasting resistors • PG = 16 dB at 10 W/224 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 4.0 A VCBO 60 V VCEO 32 V VCES 60 V VEBO 4.0 V PDISS 82 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C θJC 2.1 C/W O O O O O 1= Collector 2= Base 3 and 4= Emitter O CHARACTERISTICS O TC = 25 C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 100 mA 32 V BVCES IC = 15 mA 60 V BVEBO IE = 10 mA 4.0 V ICES VCE = 32 V hFE VCE = 25 V CC VCB = 25 V PG VCE = 25 V IC = 1.6 A 20 f = 1.0 MHz POUT = 10 W f = 224 MHz 50 16 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5.0 mA 120 --pF dB REV. A 1/1