ASI HF30-28S

HF30-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF30-28S is a 28 V epitaxial
RF NPN planar transistor designed
primarily for SSB communications.
The device utilizes emitter ballasting
for improved ruggedness and
reliability.
PACKAGE STYLE .380 4L STUD
.112x45°
A
C
B
E
E
FEATURES:
ØC
• PG = 20 dB min. at 30 W/30 MHz
• IMD3 = -30 dBc max. at 30 W (PEP)
• Omnigold™ Metalization System
B
D
H
I
J
G
#8-32 UNC-2A
F
MAXIMUM RATINGS
IC
VCB
VCE
VEBO
E
5.0 A
65 V
35 V
4.0 V
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
B
.980 / 24.89
C
.370 / 9.40
.385 / 9.78
D
.004 / 0.10
.007 / 0.18
E
.320 / 8.13
.330 / 8.38
F
.100 / 2.54
.130 / 3.30
G
.450 / 11.43
.490 / 12.45
.100 / 2.54
PDISS
60 W @ TC = 25 °C
H
.090 / 2.29
I
.155 / 3.94
TJ
-65 °C to +200 °C
J
TSTG
-65 °C to +150 °C
θJC
2.9 °C/W
CHARACTERISTICS
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10605
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
MAXIMUM
DIM
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 10 mA
65
---
V
BVCES
IC = 200 mA
65
---
V
BVCEO
IC = 200 mA
35
---
V
BVEBO
IE = 10 mA
4.0
---
V
ICES
VCE = 30 V
---
10
mA
ICBO
VCE = 30 V
---
100
mA
hFE
VCE = 5.0 V
5.0
200
---
COB
VCB = 30V
---
65
pF
IC = 500 mA
f = 1.0 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
HF30-28F
ERROR! REFERENCE SOURCE
NOT FOUND.
GP
ηC
IMD3
VCE = 28 V
POUT = 30 W (PEP)
PIN = 0.48 W
f = 30 MHz
718
60
-28
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
dB
%
dBc
REV. C
2/2