A DESCRIPTION GE PACKAGE The high power HVV0405-1000 device is a high voltage silicon enhancement mode RF transistor designed for UHF-band pulsed RADAR applications operating over the frequency range of 420 MHz to 470 MHz. FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage The device utilizes a RoHS compliant flanged package with a ceramic lid.e Th HV1230 package style is qualified for gross leak test – MIL-STD-883, Method 1014. ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS Parameter Drain-Source Voltage Gate-Source Voltage IDSX PD2 TS Drain Current Power Dissipation Storage Temperature TJ Junction Temperature Value 95 -10 to +10 80 TBD -65 to +150 200 Unit V V A W °C °C 1 JC Parameter Thermal Resistance Max TBD The HVV0405-1000 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power over all phase angles and operating voltage across the frequency band of operation. Symbol LMT1 THERMAL CHARACTERISTICS Symbol RUGGEDNESS Parameter Load Mismatch Tolerance Unit °C/W Test Condition POUT = 1000W Max 20:1 Units VSWR F = 470 MHz ELECTRICAL CHARACTERISTICS Symbol VBR(DSS) IDSS IGSS POUT GP1 IRL1 1 D 1 PD 1 2 Parameter Drain-Source Breakdown Drain Leakage Current Gate Leakage Current Output Power Power Gain Input Return Loss Drain Efficiency Pulse Droop Conditions VGS=0V,ID=10mA VGS=0V,VDS=50V VGS=5V,VDS=0V PIN=30W, F=370-470 PIN=30W, F=370-470 PIN=30W, F=370-470 PIN=30W, F=370-470 PIN=30W, F=370-470 MHz MHz MHz MHz MHz Typ 102 <500 <10 1100 16.5 15 57 0.5 Under Pulse Conditions: Pulse Width = 1ms, Pulse Period = 10ms at VDD = 50V, IDQ = 200mA Rated at TCASE = 25°C 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM Units V A A W dB dB % dB >LL&*&+#'&&& '&&&MWjji"+&L"*(&#*-&C>p 'ciFkbi[m_Zj^"'&:kjo 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 Specifications are subject to change without notice. WWW.ADSEMI.COM PACKAGE DIMENSIONS ASI PART NUMBER JDATE CODE inches mm DRAIN Note: Drawing is not actual size. GATE SOURCE ASI Semiconductor, Inc. (ASI) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, ASI does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability no liability for conse-quences resulting from the use of such information. No license, either expressed or implied, is conveyed under any ASI intellectual property rights, including any patent rights.